公开(公告)号：US12255268B2

公开(公告)日：2025-03-18

申请号：US18619924

申请日：2024-03-28

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Johannes Saric ,  Wolfgang Schmid ,  Anna Strozecka-Assig ,  Johannes Baur

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/30

Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

公开(公告)号：US12100783B2

公开(公告)日：2024-09-24

申请号：US17050793

申请日：2019-04-11

Applicant: OSRAM OLED GmbH

Inventor： Tansen Varghese ,  Adrian Stefan Avramescu

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20 ,  H01S5/02 ,  H01S5/04 ,  H01S5/042 ,  H01L33/16

CPC classification number: H01L33/20 ,  H01L27/156 ,  H01L33/0062 ,  H01L33/0095 ,  H01S5/0201 ,  H01S5/041 ,  H01S5/042 ,  H01L33/16 ,  H01S2304/04

Abstract: An optoelectronic semiconductor body is provided with a layer stack with an active region which is configured to emit electromagnetic radiation and which includes a main extension plane, wherein the layer stack comprises side walls which extend transversely to the main extension plane of the active region, and the side walls are covered at least in places with a cover layer which is formed with at least one semiconductor material. In addition, an arrangement of a plurality of optoelectronic semiconductor bodies and a method for producing an optoelectronic semiconductor body are provided.

公开(公告)号：US12062887B2

公开(公告)日：2024-08-13

申请号：US18322661

申请日：2023-05-24

Applicant: OSRAM OLED GmbH

Inventor： Sven Gerhard ,  Christoph Eichler ,  Alfred Lell ,  Bernhard Stojetz

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/22 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/3211 ,  H01S5/32341 ,  H01S2301/16

Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

公开(公告)号：US12015107B2

公开(公告)日：2024-06-18

申请号：US18180992

申请日：2023-03-09

Applicant: OSRAM OLED GmbH

Inventor： Sebastian Pickel ,  Johannes Saric ,  Wolfgang Schmid ,  Anna Strozecka-Assig ,  Johannes Baur

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30

CPC classification number: H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/30 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.

公开(公告)号：US12009460B2

公开(公告)日：2024-06-11

申请号：US16768515

申请日：2018-12-05

Applicant: Osram OLED GmbH

Inventor： Luca Haiberger

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/46 ,  H01L33/48 ,  H01L33/52 ,  H01L33/60

CPC classification number: H01L33/505 ,  H01L33/60 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: The invention relates to a method for producing a conversion element having the following steps: providing a frame having an opening; applying a sacrificial layer at least to a side surface of the at least one opening; applying a reflective layer to the sacrificial layer; introducing a conversion material into the at least one opening, the conversion material covering the reflective layer; and removing the sacrificial layer and the frame.

公开(公告)号：US11961820B2

公开(公告)日：2024-04-16

申请号：US16768208

申请日：2019-02-05

Applicant: OSRAM OLED GmbH

Inventor： Simeon Katz ,  Mathias Wendt ,  Sophia Huppmann ,  Marcus Zenger ,  Jens Mueller

IPC: H01L23/00 ,  H01L33/62

CPC classification number: H01L24/89 ,  H01L24/05 ,  H01L24/08 ,  H01L33/62 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/08111 ,  H01L2224/08146 ,  H01L2224/08502 ,  H01L2224/80805 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/12041 ,  H01L2933/0066

Abstract: A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

公开(公告)号：US20240067877A1

公开(公告)日：2024-02-29

申请号：US18502113

申请日：2023-11-06

Applicant: OSRAM OLED GmbH

Inventor： Markus SEIBALD ,  Simon PESCHKE ,  Gregor HOERDER ,  Gina Maya ACHRAINER ,  Klaus WURST ,  Dominik BAUMANN ,  Tim FIEDLER ,  Stefan LANGE ,  Hubert HUPPERTZ ,  Daniel DUTZLER ,  Thorsten SCHROEDER ,  Daniel BICHLER ,  Gudrun PLUNDRICH

IPC: C09K11/77 ,  C09K11/08 ,  H01L33/50

CPC classification number: C09K11/7734 ,  C09K11/0883 ,  H01L33/502

Abstract: A lighting device includes a phosphor having the general molecular formula (MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(X D)n:E. MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, XC=N and XD=C and E=Eu, Ce, Yb and/or Mn.

公开(公告)号：US20240047625A1

公开(公告)日：2024-02-08

申请号：US18489511

申请日：2023-10-18

Applicant: OSRAM OLED GmbH

Inventor： Luca HAIBERGER ,  Sam CHOU

IPC: H01L33/48 ,  H01L33/60

CPC classification number: H01L33/486 ,  H01L33/60 ,  H01L33/50

Abstract: A radiation-emitting component is specified with



a carrier having a cavity,
a radiation-emitting semiconductor chip which is arranged on a bottom surface delimiting the cavity and which is configured to generate primary electromagnetic radiation, and
a first reflector layer arranged above a top surface of the semiconductor chip, wherein
the carrier is transparent in places to the primary electromagnetic radiation, and
the semiconductor chip is spaced apart from at least one side surface delimiting the cavity.

公开(公告)号：US11888097B2

公开(公告)日：2024-01-30

申请号：US17253566

申请日：2019-07-01

Applicant: OSRAM OLED GmbH

Inventor： Konrad Wagner ,  Daniel Richter ,  Gunnar Petersen ,  Nicole Berner ,  Michael Förster

IPC: H01L33/54 ,  H01L25/075 ,  H01L33/56

CPC classification number: H01L33/54 ,  H01L25/0753 ,  H01L33/56 ,  H01L2933/005

Abstract: An optoelectronic component (1) is specified, with at least one radiation-emitting semiconductor chip generating electromagnetic radiation during operation, a coating surrounding the at least one semiconductor chip in lateral directions, a magnetic structure covered by the coating, wherein the magnetic structure enables the component to be identified. Furthermore, a process for the manufacture of such an optoelectronic component is given.

公开(公告)号：US11881544B2

公开(公告)日：2024-01-23

申请号：US17960794

申请日：2022-10-05

Applicant: OSRAM OLED GmbH

Inventor： Markus Pindl ,  Thomas Schwarz ,  Frank Singer ,  Sandra Sobczyk

IPC: H01L33/54 ,  H01L33/00 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/18 ,  H01L33/50 ,  H01L33/48 ,  H01L33/56 ,  H01L21/56

CPC classification number: H01L33/54 ,  H01L31/0203 ,  H01L31/02322 ,  H01L31/186 ,  H01L33/0095 ,  H01L33/502 ,  H01L21/568 ,  H01L33/486 ,  H01L33/505 ,  H01L33/56 ,  H01L2224/18 ,  H01L2224/24 ,  H01L2224/2518 ,  H01L2224/82 ,  H01L2933/005 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, including the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.