公开(公告)号：US12300674B2

公开(公告)日：2025-05-13

申请号：US17615446

申请日：2020-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael Brandl ,  Andreas Dobner ,  Matthias Goldbach ,  Sebastian Wittmann ,  Uli Hiller ,  Markus Klein ,  Thomas Schwarz ,  Andreas Waldschik ,  Michael Wittmann ,  Matthias Bruckschloegl ,  Stefan Groetsch ,  Rainer Huber ,  Peter Brick ,  Ludwig Hofbauer

IPC: H01L25/075 ,  B60K35/00 ,  H01L33/60 ,  H10H20/80 ,  H10H20/856

Abstract: An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular μLEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

公开(公告)号：US12294039B2

公开(公告)日：2025-05-06

申请号：US17753957

申请日：2020-03-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Biebersdorf ,  Stefan Illek ,  Felix Feix ,  Christoph Klemp ,  Ines Pietzonka ,  Petrus Sundgren ,  Christian Berger ,  Ana Kanevce

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/30

Abstract: A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

公开(公告)号：US12291096B2

公开(公告)日：2025-05-06

申请号：US17615396

申请日：2020-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Goldbach ,  Stefan Groetsch ,  Ludwig Hofbauer ,  Sebastian Wittmann ,  Robert Regensburger ,  Thomas Schwarz ,  Michael Brandl ,  Andreas Dobner ,  Sebastian Stigler

IPC: H01B3/30 ,  B60K35/00 ,  B60K35/60 ,  H01B7/00 ,  H01B13/10 ,  H10H20/857 ,  H10H20/01

Abstract: An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

公开(公告)号：US12279466B2

公开(公告)日：2025-04-15

申请号：US17428988

申请日：2020-02-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Franz Eberhard

IPC: H10H20/857 ,  H10H20/01 ,  H10H20/831

Abstract: An optoelectronic semiconductor device may include a first and second semiconductor layer having a first and second conductivity type, respectively, a first contact structure, a contact layer, and a separating layer. Contact holes are arranged in the separating layer. The optoelectronic semiconductor device may include portions of a conductive layer arranged over a side of the separating layer facing away from the contact layer. The portions of the conductive layer are each connected to a conducting material in the contact holes. The first contact structure is connected to the contact layer via the portions of the conductive layer and the conducting material. A length of each of the portions is greater than a greatest width of the portions. The length denotes a shortest distance between an associated contact hole and a conductive material between adjacent portions, and the width is measured perpendicular to the length.

公开(公告)号：US12278194B2

公开(公告)日：2025-04-15

申请号：US17602051

申请日：2020-04-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael Brandl

IPC: H01L27/15 ,  H01L23/544 ,  H01L25/16 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00 ,  H10H20/857

Abstract: An optoelectronic component includes at least one optoelectronic semiconductor chip and an electronic first storage medium. The first storage medium electrically stores first component information. The component can be uniquely identified via the first component information. The optoelectronic component also includes a second storage medium which can be read out wirelessly at least in an unmounted state of the component. The second storage medium stores second component information that is representative of the first component information.

公开(公告)号：US12266744B2

公开(公告)日：2025-04-01

申请号：US17284825

申请日：2018-10-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mei See Boon ,  Hui Chiang Teoh ,  Tomin Liu ,  Hui Ying Pee ,  Asliza Alias ,  Lay Teng Tan ,  Yuan Liang ,  Alex Kheng Hooi Lim ,  Wing Yew Wong

IPC: H01L33/54 ,  H01L33/50 ,  H01L33/62

Abstract: In an embodiment a method includes providing a light-emitting diode chip and a phosphor body, applying a sacrificial layer to a top side of the phosphor body only, placing the phosphor body onto the light-emitting diode chip, molding an encapsulation body directly around the light-emitting diode chip and the phosphor body by a film assisted molding, wherein at least in places a top face of the sacrificial layer facing away from the phosphor body remains unsealed with a molding film, and removing the sacrificial layer so that the top side of the phosphor body is free of the sacrificial layer.

公开(公告)号：US12261409B2

公开(公告)日：2025-03-25

申请号：US17441868

申请日：2020-03-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sven Gerhard ,  Bernhard Stojetz

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/026

Abstract: The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.

公开(公告)号：US12261256B2

公开(公告)日：2025-03-25

申请号：US17430254

申请日：2020-02-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter ,  Erwin Lang ,  Julia Stolz ,  Andreas Rausch ,  Simon Schwalenberg

IPC: H01L33/50 ,  H01L33/60

Abstract: The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

公开(公告)号：US12256629B2

公开(公告)日：2025-03-18

申请号：US17531382

申请日：2021-11-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Maxim Tchoul

IPC: H10K85/10 ,  C09K11/77 ,  H01L33/50 ,  H10K50/11 ,  H10K71/00 ,  H10K101/10 ,  H10K102/00

Abstract: A method for preparing a wavelength converting film is disclosed. The method comprising mixing at least one phosphor, a polysiloxane and optionally an organic solvent, thereby preparing a mixture, placing the mixture on a substrate, pre-curing the mixture on the substrate, thereby preparing a wavelength converting film. Furthermore, a wavelength converting film is disclosed, a method for preparing a light-emitting device and a light-emitting device.

公开(公告)号：US12205522B2

公开(公告)日：2025-01-21

申请号：US17677857

申请日：2022-02-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten Baumheinrich ,  Peter Brick ,  Jean-Jacques Drolet ,  Hubert Halbritter ,  Laura Kreiner ,  Jens Richter ,  Thomas Schwarz ,  Paul Ta ,  Kilian Regau ,  Christopher Soell ,  Hoa Vu ,  Christopher Wiesmann ,  Patrick Hoerner ,  Jong Park ,  Kanishk Chand

IPC: G09G3/32 ,  B60K35/00 ,  B60K35/22 ,  G09G5/10

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.