公开(公告)号：US07604708B2

公开(公告)日：2009-10-20

申请号：US10778898

申请日：2004-02-12

Applicant: Bingxi Sun Wood ,  Mark N. Kawaguchi ,  James S. Papanu ,  Roderick C. Mosely ,  Chiukun Steven Lai ,  Chien-Teh Kao ,  Hua Ai ,  Wei W. Wang

Inventor： Bingxi Sun Wood ,  Mark N. Kawaguchi ,  James S. Papanu ,  Roderick C. Mosely ,  Chiukun Steven Lai ,  Chien-Teh Kao ,  Hua Ai ,  Wei W. Wang

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  C23C14/022 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32871 ,  H01J37/34 ,  H01L21/02046 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67028 ,  H01L21/76814 ,  H01L21/76838

Abstract: A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an ion filter to filter the remotely energized gas to form a filtered energized gas having a second ratio of ionic hydrogen-containing species to radical hydrogen-containing species, the second ratio being different than the first ratio, and a gas distributor to introduce the filtered energized gas into the chamber.

Abstract translation: 基板清洁装置具有远程源以远程激励含氢气体以形成具有离子含氢物质与自由基含氢物质的第一比例的通电气体。 该设备具有带有基板支撑件的处理室，用于过滤远程激励的气体以形成具有离子含氢物质与含氢的物质的第二比例的过滤的通电气体的离子过滤器，第二比例不同于 第一比例和气体分配器，以将过滤的通电气体引入室中。

公开(公告)号：US07313964B2

公开(公告)日：2008-01-01

申请号：US11504138

申请日：2006-08-14

Applicant: Mary Grace Montesclaros ,  Roderick C. Mosely ,  Steven Jay Randazzo ,  Bryce Sollazzi ,  Robert James Speciale

Inventor： Mary Grace Montesclaros ,  Roderick C. Mosely ,  Steven Jay Randazzo ,  Bryce Sollazzi ,  Robert James Speciale

IPC: H01H33/66

CPC classification number: H01H33/668 ,  H01H2033/306

Abstract: A method for detecting a high pressure condition within a high voltage vacuum device includes detecting the position of a movable structure such as a bellows. The position at high pressures can be detected optically by the interruption of a light beam reflected by a hemispherically shaped reflector. The hemispherical reflector allows the source light fiber to oriented parallel to the detection light fiber, providing a more compact and efficient fiber routing.

公开(公告)号：US08668816B2

公开(公告)日：2014-03-11

申请号：US11933157

申请日：2007-10-31

Applicant: Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

Inventor： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC: C23C14/35

CPC classification number: C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract translation: 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US07802480B2

公开(公告)日：2010-09-28

申请号：US12321902

申请日：2009-01-27

Applicant: Roderick C. Mosely ,  Steven Jay Randazzo

Inventor： Roderick C. Mosely ,  Steven Jay Randazzo

IPC: H01H33/66

CPC classification number: H01H33/668

Abstract: A apparatus for detecting a high pressure condition within a high voltage vacuum device includes a microcircuit embedded within the vacuum containment that transmits a wireless signal upon detection of a high pressure condition and/or light generated by arcing between the electrical contacts of the high voltage device. The wireless signal can be transmitted via RF or optical means. The microcircuit is powered by energy sources produced within the vacuum device such as magnetic fields generated by current flow through the device, or light generated by arcing between the contacts. Alternatively, the microcircuit can be powered RF or optical signals transmitted to the microcircuit from outside the vacuum device.

Abstract translation: 用于检测高压真空装置内的高压条件的装置包括嵌入在真空容纳部内的微电路，其在检测到高压状态时发射无线信号，和/或通过高压装置的电触点之间的电弧产生的光 。 无线信号可以通过RF或光学方式传输。 微电路由真空装置内产生的能量源（例如通过装置的电流产生的磁场）产生，或由触点之间的电弧产生的光。 或者，可以从真空装置外部向微电路供电RF或光信号。

公开(公告)号：US07383733B2

公开(公告)日：2008-06-10

申请号：US11241087

申请日：2005-09-30

Applicant: Roderick C. Mosely ,  Steven Jay Randazzo ,  Li Lei ,  Ernest Frederick Bestel

Inventor： Roderick C. Mosely ,  Steven Jay Randazzo ,  Li Lei ,  Ernest Frederick Bestel

IPC: G01N29/10

CPC classification number: B06B3/00 ,  H01H33/668 ,  H01H2033/6686

Abstract: A method and apparatus for detecting a high pressure condition within an interrupter includes introducing high intensity ultrasonic sound into the outer wall of a vacuum interrupter through a sonic wave guide, then listening for the reflected and retransmitted response signals. The characteristics of the response signals are utilized to determine the pressure within the interrupter, and to determine when an unwanted high pressure condition exists.

Abstract translation: 用于检测断路器内的高压条件的方法和装置包括通过声波引导器将高强度超声波引入真空断路器的外壁，然后监听反射和重传的响应信号。 响应信号的特性用于确定断路器内的压力，并确定何时存在不需要的高压条件。

公开(公告)号：US06518176B2

公开(公告)日：2003-02-11

申请号：US09092747

申请日：1998-06-05

Applicant: Ted Guo ,  Liang-Yuh Chen ,  Suchitra Subrahmanyan ,  Roderick C. Mosely

Inventor： Ted Guo ,  Liang-Yuh Chen ,  Suchitra Subrahmanyan ,  Roderick C. Mosely

IPC: H01L2144

CPC classification number: H01L21/76876 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A contact level via and a method of performing selective deposition of a barrier layer to form a contact level via for selective aluminum metallization. Specifically, the method forms a self-aligned silicide region by depositing titanium atop a structure containing a contact level via, converting the titanium in the contact regions into titanium silicide, removing the unreacted titanium, and performing nitridation of the titanium silicide to complete a barrier layer located in only the contact region of the via. Once the barrier layer is formed, the layer can be optionally fortified through oxygen stuffing to create an effective barrier layer for aluminum metallization.

Abstract translation: 接触电平通孔和执行选择性沉积阻挡层以形成用于选择性铝金属化的接触电平通路的方法。 具体地，该方法通过在包含接触电平通孔的结构上方沉积钛而形成自对准硅化物区域，将接触区域中的钛转化为硅化钛，除去未反应的钛，并进行硅化钛的氮化以完成阻挡层 层位于通孔的接触区域中。 一旦形成了阻挡层，就可以通过氧气填充来选择性地强化该层，以产生用于铝金属化的有效阻挡层。

公开(公告)号：US06509274B1

公开(公告)日：2003-01-21

申请号：US09632486

申请日：2000-08-04

Applicant: Ted Guo ,  Jing-Pei Chou ,  Liang-Yuh Chen ,  Roderick C. Mosely

Inventor： Ted Guo ,  Jing-Pei Chou ,  Liang-Yuh Chen ,  Roderick C. Mosely

IPC: H01L21302

CPC classification number: H01L21/76843 ,  H01L21/76849 ,  H01L21/76882

Abstract: A method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate that can compensate for some misalignment between the filled vias and the lines. By alternately depositing liner-barrier layers and aluminum layers on the substrate, different etch chemistries can be used that can anisotropically etch an aluminum layer used to form the lines without etching voids in the aluminum-filled vias.

Abstract translation: 一种用于在半导体衬底中的铝填充通孔上形成铝线的方法，其可以补偿所填充的通孔和线之间的一些不对准。 通过在衬底上交替沉积衬垫阻挡层和铝层，可以使用不同的蚀刻化学性质，其可以各向异性地蚀刻用于形成线的铝层，而不会在铝填充的通孔中蚀刻空隙。

公开(公告)号：US6066358A

公开(公告)日：2000-05-23

申请号：US611108

申请日：1996-03-05

Applicant: Ted Guo ,  Liang Chen ,  Fusen Chen ,  Roderick C. Mosely

Inventor： Ted Guo ,  Liang Chen ,  Fusen Chen ,  Roderick C. Mosely

IPC: H01L21/285 ,  C23C14/56 ,  C23C16/54 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/677 ,  H01L21/768 ,  B05D5/12 ,  C23C14/04 ,  C23C16/04 ,  C23C16/06

CPC classification number: H01L21/76876 ,  C23C14/568 ,  C23C16/54 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76879

Abstract: The present invention relates generally to an improved apparatus and process for providing uniform step coverage on a substrate and planarization of conducting layers to form continuous, void-free interconnects in sub-half micron, high aspect ratio aperture width applications and highly oriented conducting layers. In one aspect of the invention, a dielectric layer is formed over a conducting or semiconducting layer and etched to form an aperture exposing the underlying conducting or semiconducting layer on the aperture floor. An ultra-thin nucleation layer is then deposited by physical vapor deposition onto the field of the dielectric layer. A CVD metal layer is then deposited onto the structure to achieve selective deposition on the floor of the aperture, while preferably also forming a highly oriented blanket layer on the field. The present apparatus and process reduce the number of steps necessary to fabricate CVD metal interconnects and layers that are substantially void-free and planarized. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the apertures to form vias and contacts occurs without the formation of oxides between the layers.

Abstract translation: 本发明一般涉及一种改进的装置和方法，用于在衬底上提供均匀的台阶覆盖和导电层的平坦化，以形成半微米，高纵横比孔径宽度应用和高度取向导电层的连续的无空隙互连。 在本发明的一个方面，电介质层形成在导电或半导体层之上，并被蚀刻以形成露出孔底板上下面的导电或半导体层的孔。 然后通过物理气相沉积将超薄成核层沉积到介电层的场上。 然后将CVD金属层沉积到结构上以实现孔的地板上的选择性沉积，同时优选地还在场上形成高度取向的覆盖层。 本装置和工艺减少了制造基本上无空隙和平坦化的CVD金属互连和层所需的步骤数量。 金属化处理优选在包括PVD和CVD处理室的一体化处理系统中进行，使得一旦将衬底引入真空环境中，孔的金属化形成通孔和接触，而不会在两者之间形成氧化物之间 层。

公开(公告)号：US5989999A

公开(公告)日：1999-11-23

申请号：US939914

申请日：1997-09-26

Applicant: Timothy E. Levine ,  Ling Chen ,  Mei Chang ,  Roderick C. Mosely ,  Karl A. Littau ,  Ivo Raaijmakers

Inventor： Timothy E. Levine ,  Ling Chen ,  Mei Chang ,  Roderick C. Mosely ,  Karl A. Littau ,  Ivo Raaijmakers

IPC: C23C16/34 ,  C23C16/458 ,  C23C16/48 ,  C23C16/509 ,  C23C16/56 ,  H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76864 ,  C23C16/34 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/481 ,  C23C16/5096 ,  C23C16/56 ,  H01J37/32174 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer (film) of tantalum nitride material is deposited on the wafer. Next, the layer of tantalum nitride material is annealed. The deposition and annealing may both be accomplished in the same chamber, without need for removing the wafer from the chamber until both steps are completed.

Abstract translation: 放置在处理室中的晶片上的膜的构造可以通过以下步骤进行。 在晶片上沉积氮化钽材料层（膜）。 接下来，对氮化钽层进行退火。 沉积和退火都可以在相同的室中完成，而不需要从腔室中移除晶片，直到完成两个步骤。

公开(公告)号：US4717461A

公开(公告)日：1988-01-05

申请号：US907578

申请日：1986-09-15

Applicant: Thomas L. Strahl ,  Lawrence T. Lamont, Jr. ,  Carl T. Peterson ,  Hobart A. Brown ,  Lonnie W. McCormick ,  Roderick C. Mosely

Inventor： Thomas L. Strahl ,  Lawrence T. Lamont, Jr. ,  Carl T. Peterson ,  Hobart A. Brown ,  Lonnie W. McCormick ,  Roderick C. Mosely

IPC: H01L21/673 ,  H01L21/677 ,  C23C14/00

CPC classification number: H01L21/67766 ,  H01L21/67778 ,  H01L21/68728 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S438/908

Abstract: A method of processing a plurality of semiconductor wafers from a wafer cassette including a wafer transfer housing and one or more processing chambers. A wafer is removed from its cassette and transported through the transfer housing into one or more processing chambers for etching, deposition or other such operations. The processed wafer is replaced into its cassette after being transported back through the wafer transfer housing.

Abstract translation: 一种从包括晶片转移壳体和一个或多个处理室的晶片盒处理多个半导体晶片的方法。 将晶片从其盒中取出并通过转印壳体输送到用于蚀刻，沉积或其它此类操作的一个或多个处理室中。 将经处理的晶片在通过晶片传送外壳传送回之后被替换成其盒。