公开(公告)号：US20130266505A1

公开(公告)日：2013-10-10

申请号：US13811521

申请日：2011-07-20

Applicant: Christian Bauch ,  Rumen Deltschew ,  Sven Holl ,  Gerd Lippold ,  Javad Mohsseni ,  Juergen Steinwandel ,  Agata Godula-Jopek ,  Christian Wolff

Inventor： Christian Bauch ,  Rumen Deltschew ,  Sven Holl ,  Gerd Lippold ,  Javad Mohsseni ,  Juergen Steinwandel ,  Agata Godula-Jopek ,  Christian Wolff

IPC: B64D41/00

CPC classification number: B64D41/00 ,  B64D2041/005 ,  C01B3/06 ,  C01B2203/066 ,  C01B2203/169 ,  H01M8/0606 ,  H01M8/0656 ,  H01M2008/1095 ,  H01M2250/20 ,  Y02E60/364 ,  Y02E60/50 ,  Y02P20/129 ,  Y02T50/44 ,  Y02T90/32 ,  Y02T90/36

Abstract: A fuel cell supply device that generates hydrogen for fuel cells in an aircraft includes a reaction chamber which reacts hydrogenated polysilanes or mixtures thereof with water; a feed device that feeds at least one reactant into the reaction chamber; and a discharge device that leads hydrogen formed in the reaction to a fuel cell.

Abstract translation: 在飞行器中产生燃料电池用氢的燃料电池供给装置包括使氢化聚硅烷或其混合物与水反应的反应室; 将至少一种反应物进料到反应室中的进料装置; 以及将反应中形成的氢引导到燃料电池的排出装置。

公开(公告)号：US20130243683A1

公开(公告)日：2013-09-19

申请号：US13821531

申请日：2011-09-08

Applicant: Norbert Auner ,  Sven Holl ,  Christian Bauch ,  Rumen Deltschew ,  Javad Mohsseni

Inventor： Norbert Auner ,  Sven Holl ,  Christian Bauch ,  Rumen Deltschew ,  Javad Mohsseni

IPC: C01B33/021

CPC classification number: C01B33/021 ,  C01B33/03 ,  C01B33/10747

Abstract: A method for producing high-purity silicon is described. SiCl4 is produced from Si02-containing starting materials in a carbochlorination process, and the high-purity silicon is obtained from said SiCl4 in further steps of the method. No elemental silicon is added in any of the steps, resulting a particularly efficient and inexpensive method.

Abstract translation: 对高纯硅的制造方法进行说明。 SiCl 4由在含碳原料的碳氯化法制备，高纯度硅是从所述SiCl4得到的，该方法的进一步步骤。 在任何步骤中不添加元素硅，从而产生特别有效和便宜的方法。

公开(公告)号：US20120315392A1

公开(公告)日：2012-12-13

申请号：US13513217

申请日：2010-12-06

Applicant: Norbert Auner ,  Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Gerd Lippold ,  Thoralf Gebel

Inventor： Norbert Auner ,  Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Gerd Lippold ,  Thoralf Gebel

IPC: C01B33/00 ,  B05D3/02 ,  C09D1/00

CPC classification number: C08G77/60 ,  C01B33/04 ,  C01G17/00 ,  C08G79/14 ,  Y02P20/582

Abstract: A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.

Abstract translation: 制备氢化聚锗硅烷作为纯化合物或化合物的混合物的方法包括氢化卤代聚锗硅烷。

公开(公告)号：US20120313037A1

公开(公告)日：2012-12-13

申请号：US13512461

申请日：2010-12-02

Applicant: Norbert Auner ,  Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Gerd Lippold

Inventor： Norbert Auner ,  Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Gerd Lippold

IPC: C01B33/107 ,  C09K3/00

CPC classification number: C08G77/60 ,  C01B33/107 ,  C01B33/10773

Abstract: A chlorinated polysilane has the formula SiClx wherein x=0.01−0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C.

Abstract translation: 氯化聚硅烷具有式SiClx，其中x = 0.01-0.8，其可以通过在低于600℃的温度下热分解氯代聚硅烷来制备。

公开(公告)号：US20100155219A1

公开(公告)日：2010-06-24

申请号：US12530662

申请日：2008-03-17

Applicant: Norbert Auner ,  Sven Holl ,  Christian Bauch ,  Gerd Lippold ,  Rumen Deltschew

Inventor： Norbert Auner ,  Sven Holl ,  Christian Bauch ,  Gerd Lippold ,  Rumen Deltschew

IPC: C08G77/12 ,  B01J19/08 ,  C08G79/00

CPC classification number: B01J19/087 ,  B01J19/088 ,  B01J2219/0807 ,  B01J2219/0847 ,  B01J2219/0849 ,  B01J2219/0852 ,  B01J2219/0854 ,  B01J2219/0869 ,  B01J2219/0894 ,  C08G77/60

Abstract: The invention is based on the aim of developing a device and a method for the plasma-enhanced synthesis of halogenated polysilanes and polygermanes, wherein at least one reaction partner is present in a gaseous form and is excited by reactive particles from a plasma zone, and is subsequently reacted by means of at least one further reaction partner which is present in the reaction chamber in vaporous or gaseous form. Reactions of halogen silanes or germanes of the group SiCl4, SiF4, GeCl4, GeF4 with H2 are possible.

Abstract translation: 本发明是基于开发用于等离子体增强合成卤代聚硅烷和多晶硅的装置和方法的目的，其中至少一个反应对象以气态存在并被来自等离子体区的反应性颗粒激发，以及 随后通过至少一种另外的反应配对物反应，该反应伴侣以蒸气或气态的形式存在于反应室中。 SiCl4，SiF4，GeCl4，GeF4与H2的卤素硅烷或锗烷的反应是可能的。

公开(公告)号：US09327987B2

公开(公告)日：2016-05-03

申请号：US13057084

申请日：2009-07-29

Applicant: Seyed-Javad Mohsseni-Ala ,  Christian Bauch ,  Rumen Deltschew ,  Thoralf Gebel ,  Gerd Lippold ,  Matthias Heuer

Inventor： Seyed-Javad Mohsseni-Ala ,  Christian Bauch ,  Rumen Deltschew ,  Thoralf Gebel ,  Gerd Lippold ,  Matthias Heuer ,  Fritz Kirscht ,  Kamel Ounadjela

IPC: C01B33/02 ,  C01B33/037 ,  C30B29/06 ,  C30B11/00 ,  C30B15/00 ,  C30B15/34

CPC classification number: C01B33/037 ,  C30B11/00 ,  C30B15/00 ,  C30B15/34 ,  C30B29/06

Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.

Abstract translation: 本发明描述了从冶金硅中除去非金属杂质的方法。 熔融物由冶金硅和含卤化硅制成。 结果，以非金属卤化物的形式将杂质升华并从熔体中除去。 与通过Si熔体吹入气态卤素的已知方法相比，该新方法可以以特别简单和有效的方式进行。

公开(公告)号：US09263262B2

公开(公告)日：2016-02-16

申请号：US13696137

申请日：2011-05-05

Applicant: Norbert Auner ,  Christian Bauch ,  Rumen Deltschew ,  Sven Holl ,  Javad Mohsseni ,  Gerd Lippold

Inventor： Norbert Auner ,  Christian Bauch ,  Rumen Deltschew ,  Sven Holl ,  Javad Mohsseni ,  Gerd Lippold

IPC: H01L21/02 ,  B82Y30/00 ,  C01B33/027 ,  C01B33/03 ,  C01G17/00 ,  C30B25/00 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/60 ,  C01B33/107 ,  H01L31/0352 ,  H01L29/12 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06

CPC classification number: H01L21/0262 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B33/027 ,  C01B33/03 ,  C01B33/1071 ,  C01B33/10773 ,  C01G17/00 ,  C01P2004/16 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C30B25/00 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/60 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/02653 ,  H01L29/0669 ,  H01L29/125 ,  H01L31/035227

Abstract: The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Abstract translation: 本发明涉及由半导体材料组成或包含半导体材料的纳米线，并且用于光伏和电子学中的应用以及其生产方法。 纳米线的特征在于它们通过使用新型前体的新方法获得。 前体表示化合物或化合物的混合物，其各自具有至少一个直接的Si-Si和/或Ge-Si和/或Ge-Ge键，其取代基由卤素和/或氢组成，并且在组成中 其中取代基：类金属原子的原子比至少为1：1。

公开(公告)号：US09034291B2

公开(公告)日：2015-05-19

申请号：US13805762

申请日：2011-06-30

Applicant: Norbert Auner ,  Christian Bauch ,  Rumen Deltschew ,  Sven Holl ,  Javad Mohsseni

Inventor： Norbert Auner ,  Christian Bauch ,  Rumen Deltschew ,  Sven Holl ,  Javad Mohsseni

IPC: C01B33/04 ,  C01B33/12

CPC classification number: C01B33/04 ,  C01B33/12 ,  Y10S502/526

Abstract: A storage material for obtaining H-silanes which is present in the form of a hydrogenated polysilane (HPS), as a pure compound or as a mixture of compounds having on average at least six direct Si—Si bonds, the substituenis of which predominantly consist of hydrogen and in the composition of which the atomic ratio of sabstitueot to silicon is at least 1:1.

Abstract translation: 用于获得以氢化聚硅烷（HPS）形式存在的H-硅烷的存储材料，其为纯化合物或平均具有至少六个直接Si-Si键的化合物的混合物，其取代基主要包含 的氢，并且其组成中sabstitueoto与硅的原子比至少为1：1。

公开(公告)号：US20130270102A1

公开(公告)日：2013-10-17

申请号：US13823731

申请日：2011-09-14

Applicant: Norbert Auner ,  Sven Holl ,  Christian Bauch ,  Rumen Deltschew ,  Javad Mohsseni

Inventor： Norbert Auner ,  Sven Holl ,  Christian Bauch ,  Rumen Deltschew ,  Javad Mohsseni

IPC: C01B33/03 ,  C01B33/107

CPC classification number: C01B33/03 ,  C01B33/107 ,  C08G77/60

Abstract: The invention relates to a method for producing fluorinated polysilanes. Hydrogen fluoride and/or hexafluorosilicic acid, which are obtained in particular during acid digestion of mineral phosphates in the production of phosphate fertilisers, are used for the production of SiF4. The SiF4 obtained is thermally or plasma-chemically converted to fluorinated polysilane. The method is particularly efficient and cost-effective.

Abstract translation: 本发明涉及一种氟化聚硅烷的制备方法。 在生产磷酸盐肥料时，特别是在磷酸钙矿物酸消解过程中特别获得的氟化氢和/或六氟硅酸用于生产SiF4。 所得到的SiF 4被热或等离子体化学转化成氟化聚硅烷。 该方法是特别有效和具有成本效益的。

公开(公告)号：US20130001467A1

公开(公告)日：2013-01-03

申请号：US13513018

申请日：2010-12-06

Applicant: Norbert Auner ,  Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Gerd Lippold ,  Thoralf Gebel

Inventor： Norbert Auner ,  Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Gerd Lippold ,  Thoralf Gebel

IPC: C09K3/00

CPC classification number: C08G77/60 ,  C01B33/04 ,  C01G17/00 ,  C08G79/14 ,  Y02P20/582

Abstract: Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative-splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.

Abstract translation: 动态稳定的卤代聚硅烷包括分别具有至少四个硅原子的化合物的混合物，其中包含氯，氯和氢的取代基，并且在其组成中，取代基与硅的原子比至少为1:1，其中 a）动力学稳定的卤代聚硅烷在氯氧化分解方面具有动态的高稳定性，在10℃以内的温度为120℃，在1013hPa下过量的氯气的转化度不超过30mol ％，和b）动力学稳定的卤代聚硅烷在聚硅烷分子中的支化点百分比大于8mol％。