公开(公告)号：US20170323993A1

公开(公告)日：2017-11-09

申请号：US15522238

申请日：2015-10-27

Applicant: Sol Voltaics AB

Inventor： Mikael BJÖRK ,  Jonas OHLSSON ,  Lars SAMUELSON ,  Erik SAUAR ,  Ingvar ÅBERG

IPC: H01L31/0687 ,  H01L31/05 ,  H01L31/032 ,  H01L31/0296 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/02 ,  H01L31/0693 ,  H01L31/046

CPC classification number: H01L31/0687 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/02966 ,  H01L31/0322 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/043 ,  H01L31/046 ,  H01L31/0504 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/078 ,  Y02E10/544

Abstract: A hybrid photovoltaic device (1) comprising a thin film solar cell (2) disposed in a first layer (21) comprising an array of vertically aligned nanowires (25), said nanowires having a junction with a first band gap corresponding to a first spectral range. The nanowires (25) form absorbing regions, and non-absorbing regions are formed between the nanowires. A bulk solar cell (3) s disposed in a second layer (31), positioned below the first layer (21), having a junction with a second band gap, which is smaller than said first band gap and corresponding to a second spectral range. The nanowires are provided in the first layer with a lateral density selected a such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range.

公开(公告)号：US20160155870A1

公开(公告)日：2016-06-02

申请号：US14896369

申请日：2014-06-05

Applicant: SOL VOLTAICS AB

Inventor： Ingvar ÅBERG ,  Jonas OHLSSON ,  Damir ASOLI ,  Nicklas ANTTU

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/0216

CPC classification number: H01L31/035281 ,  H01L31/02167 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/075 ,  H01L31/1852 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/544 ,  Y02E10/548

Abstract: A solar cell structure (1) and a method of its fabrication, the structure comprising an array of elongated nanowires (2) made in a semiconductor material having a direct band gap. Each nanowire (2) has at least a first (3) and a second (4) sections. Said structure comprises a first electrode layer (7) realizing ohmic contact to at least one portion of each first section (3), a second, optically transparent electrode layer (8) realizing contact to at least one portion of each second section. Each nanowire (2) comprises a minority carrier barrier element (6) for minimizing recombination of minority carriers at the contact to the second electrode layer (8).

Abstract translation: 一种太阳能电池结构（1）及其制造方法，该结构包括由具有直接带隙的半导体材料制成的细长纳米线阵列（2）。 每个纳米线（2）至少具有第一（3）和第二（4）部分。 所述结构包括实现与每个第一部分（3）的至少一部分欧姆接触的第一电极层（7），实现与每个第二部分的至少一部分接触的第二光学透明电极层（8）。 每个纳米线（2）包括用于最小化与第二电极层（8）的接触处的少数载流子的复合的少数载流子势垒元件（6）。

公开(公告)号：US20140175372A1

公开(公告)日：2014-06-26

申请号：US13723413

申请日：2012-12-21

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L31/0224 ,  H01L33/42

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Abstract translation: 半导体纳米线器件包括至少一个具有底表面和顶表面的半导体纳米线，围绕半导体纳米线的绝缘材料以及欧姆接触半导体纳米线的顶表面的电极。 电极与半导体纳米线的半导体材料的接触由与半导体纳米线的顶表面的接触所支配。

公开(公告)号：US10196755B2

公开(公告)日：2019-02-05

申请号：US15410078

申请日：2017-01-19

Applicant: SOL VOLTAICS AB

Inventor： Greg Alcott ,  Martin Magnusson ,  Olivier Postel ,  Knut Deppert ,  Lars Samuelson ,  Jonas Ohlsson

IPC: C30B25/00 ,  C30B25/14 ,  C30B23/00 ,  C30B25/02 ,  C30B29/06 ,  C30B29/40 ,  C30B11/00 ,  C30B11/12 ,  C30B29/62 ,  C30B29/60 ,  C23C16/30 ,  C23C16/455 ,  C30B29/42

Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

公开(公告)号：US09951420B2

公开(公告)日：2018-04-24

申请号：US14537247

申请日：2014-11-10

Applicant: SOL VOLTAICS AB

Inventor： Greg Alcott

IPC: C23C16/00 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  C23C16/448 ,  C23C14/22 ,  C30B25/16 ,  C30B29/60

CPC classification number: C23C16/455 ,  C23C14/228 ,  C23C16/4481 ,  C23C16/46 ,  C23C16/463 ,  C23C16/52 ,  C30B25/165 ,  C30B29/60

Abstract: A nanoparticles aerosol generator is disclosed. The nanoparticles aerosol generator includes an evaporation chamber having a wall, a container containing a source material, and a heating device configured to heat the source material. The nanoparticles aerosol generator also includes a carrier gas source configured to blow a carrier gas toward the source material to generate a nanoparticles aerosol with nanoparticles of the source material suspended therein. The nanoparticles aerosol generator further includes a dilution gas source configured to supply a dilution gas into the chamber to flow substantially along the wall within the chamber and to dilute the nanoparticles aerosol.

公开(公告)号：US09818830B2

公开(公告)日：2017-11-14

申请号：US15221811

申请日：2016-07-28

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L29/41 ,  H01L33/38 ,  H01L31/0224 ,  H01L33/42 ,  H01L33/16 ,  H01L31/0352 ,  H01L31/0735 ,  H01L31/18 ,  H01L21/02 ,  H01L29/06 ,  H01L31/042 ,  H01L33/02 ,  H01L21/311 ,  H01L27/15 ,  H01L21/3213 ,  H01L29/20

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

公开(公告)号：US20160336411A1

公开(公告)日：2016-11-17

申请号：US15221811

申请日：2016-07-28

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L29/41 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

公开(公告)号：US10919074B2

公开(公告)日：2021-02-16

申请号：US16305033

申请日：2017-06-12

Applicant: Sol Voltaics AB

Inventor： Niklas Mårtensson ,  Jaime Castillo Leon

IPC: B05D1/20 ,  B05D7/24 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18

Abstract: A method for transferring an assembly of oriented nanowires from a fluid to a substrate surface, comprising: providing (FIG. 2A) a fluid to a container, said fluid comprising a first liquid (11), a second liquid (12) and a plurality of nanowires (25), wherein the first and second liquids phase separate into a sub phase, a top phase, and an interface (13) between the sub phase and the top phase; wherein the nanowires are functionalized to align vertically into a nanowire aggregate at the interface; wherein the fluid is provided with a substance in a composition configured to change the composition of the top phase or the composition of the sub phase to counteract bulging of the interface (FIG. 2B); and bringing the nanowire aggregate into contact with a substrate surface such that a majority of the nanowires are aligned with respect to each other on the substrate.

公开(公告)号：US10177264B2

公开(公告)日：2019-01-08

申请号：US15307338

申请日：2015-04-28

Applicant: SOL VOLTAICS AB

Inventor： Umear Naseem ,  Johan Borgström ,  Jaime Castillo-Léon ,  Per Viklund

IPC: H01L31/18 ,  H01L29/20 ,  H01L29/06 ,  H01L31/0352 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  H01L29/22 ,  B05D1/20

Abstract: A method for transferring an assembly of oriented nanowires from a liquid interface onto a surface including providing a first liquid and a second liquid, wherein the first and second liquids phase separate into a bottom phase, a top phase and an interface between the bottom phase and the top phase, providing nanowires in the first and second liquids such that the majority of the nanowires are located at the interface and providing the nanowires onto a substrate such that a majority of the nanowires are aligned with respect to each other on the substrate.

公开(公告)号：US09574286B2

公开(公告)日：2017-02-21

申请号：US14403427

申请日：2013-05-24

Applicant: SOL VOLTAICS AB

Inventor： Greg Alcott ,  Martin Magnusson ,  Olivier Postel ,  Knut Deppert ,  Lars Samuelson ,  Jonas Ohlsson

IPC: C30B25/00 ,  C30B25/02 ,  C30B29/06 ,  C30B29/40 ,  C30B11/00 ,  C30B11/12 ,  C30B29/62 ,  C30B29/60

CPC classification number: C30B25/14 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/45519 ,  C30B11/003 ,  C30B11/006 ,  C30B11/12 ,  C30B23/007 ,  C30B25/005 ,  C30B25/025 ,  C30B29/06 ,  C30B29/40 ,  C30B29/403 ,  C30B29/42 ,  C30B29/60 ,  C30B29/62 ,  Y10T117/102

Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

Abstract translation: 一种气相纳米线生长装置，包括反应室（200），第一输入端和第二输入端（202B，202A）。 所述第一输入同心地位于所述第二输入内，并且所述第一和第二输入被配置为使得从所述第二输入端递送的第二流体在从所述第一输入端输送的第一流体与所述反应室的壁之间提供护套。 可以使用催化剂颗粒的气溶胶来生长纳米线。