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公开(公告)号：US11637197B2
公开(公告)日：2023-04-25
申请号：US17253626
申请日：2019-09-16
Applicant: ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong Wang , Quanbin Zhou
IPC: H01L29/778 , H01L21/02 , H01L29/20 , H01L29/205 , H01L29/207
Abstract: An epitaxial structure of a GaN-based radio frequency device based on a Si substrate and a manufacturing method thereof are provided. The epitaxial structure is composed of a Si substrate (1), an AlN nucleation layer (2), AlGaN buffer layers (3, 4, 5), a GaN:Fe/GaN high-resistance layer (6), a GaN superlattice layer (7), a GaN channel layer (8), an AlGaN barrier layer (9) and a GaN cap layer (10) which are stacked in turn from bottom to top, wherein the GaN:Fe/GaN high-resistance layer (6) is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately connected; the GaN superlattice layer (7) is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected.
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公开(公告)号：US20230079081A1
公开(公告)日：2023-03-16
申请号：US17986178
申请日：2022-11-14
Applicant: South China University of Technology , SOUTH CHINA UNIVERSITY OF TECHNOLOGY-ZHUHAI INSTITUTE OF MODERN INDUSTRIAL INNOVATION
Inventor： QIANG HUANG , Qing Gao , Bin Zhang , Xiong Fu
Abstract: Disclosed in the present invention are a starch-embedded aroma substance microcapsule and a preparation method therefor. The method comprises: performing degreasing treatment on starch, gelatinizing the starch at high temperature, sequentially adding aroma substances having different molecular sizes into the starch paste, and compounding at high temperature; and finally, cooling, centrifuging, washing, and drying to obtain an aroma substance microcapsule. The total embedding rate of the aroma substances in the obtained microcapsule can reach 46.64%. The present invention is simple and convenient in process, and easy in condition control, does not need large special equipment, and has low cost and high efficiency.
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公开(公告)号：US20220209065A1
公开(公告)日：2022-06-30
申请号：US17695873
申请日：2022-03-16
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY , ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong WANG , Lijun TAN , Ruohe YAO , Kai WANG , Zijing XIE
Abstract: The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.
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公开(公告)号：US20210305460A1
公开(公告)日：2021-09-30
申请号：US17260564
申请日：2019-09-17
Applicant: ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong WANG , Rulian WEN , Xiaolong HU , Quanbin ZHOU
Abstract: A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film (2) on a substrate (1) first, and annealing the grown contact layer thin film (2) in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first Ga2O3 thin film (31) by sputtering through magnetron sputtering under argon conditions; growing a doped thin film (4) by sputtering through magnetron sputtering under argon conditions; growing a second Ga2O3 thin film (32) by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped Ga2O3 thin film (5). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.
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公开(公告)号：US12224377B2
公开(公告)日：2025-02-11
申请号：US17695873
申请日：2022-03-16
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY , ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong Wang , Lijun Tan , Ruohe Yao , Kai Wang , Zijing Xie
Abstract: The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.
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Patent Agency Ranking
公开(公告)号：US12107192B2
公开(公告)日：2024-10-01
申请号：US17260564
申请日：2019-09-17
Applicant: ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong Wang , Rulian Wen , Xiaolong Hu , Quanbin Zhou
CPC classification number: H01L33/42 , C23C14/025 , C23C14/08 , C23C14/35 , C23C14/5806 , H01B5/14 , C23C14/024 , H01L33/32 , H01L2933/0016
Abstract: A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film (2) on a substrate (1) first, and annealing the grown contact layer thin film (2) in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first Ga2O3 thin film (31) by sputtering through magnetron sputtering under argon conditions; growing a doped thin film (4) by sputtering through magnetron sputtering under argon conditions; growing a second Ga2O3 thin film (32) by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped Ga2O3 thin film (5). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.
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公开(公告)号：US20220209002A1
公开(公告)日：2022-06-30
申请号：US17695874
申请日：2022-03-16
Applicant: ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong WANG , Xiaoyi LIU , Jingxiong CHEN
IPC: H01L29/778 , H01L29/20 , H01L29/205 , H01L29/423 , H01L21/306 , H01L21/308 , H01L29/40 , H01L29/66
Abstract: The present invention discloses a high-linearity GaN-based millimeter wave device and preparation method thereof. The device includes an AlGaN/GaN heterojunction epitaxial layer, the AlGaN/GaN heterojunction epitaxial layer is of a boss structure, a protruding portion above the boss is an active region, two ends of an upper surface of the active region are respectively connected to a source electrode and a drain electrode, p-type GaN regions with different doping concentrations are located between the source electrode and the drain electrode on the upper surface of the active region, wherein the p-type GaN regions with different doping concentrations are formed by arranging a first p-type GaN region and a second p-type GaN region with different doping concentrations and the same thickness front and back along a gate width, a rear surface of the first p-type GaN region coincides with a front surface of the second p-type GaN region, and left and right edges of the first p-type GaN region and the second p-type GaN region are aligned respectively; and a gate electrode is located above the p-type GaN regions with different doping concentrations. The proposed structure of placing p-type GaN regions with different doping concentrations under the gate effectively modulates the threshold voltage of the device and improves the linearity of the device.
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公开(公告)号：US20210265493A1
公开(公告)日：2021-08-26
申请号：US17253626
申请日：2019-09-16
Applicant: ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY, SOUTH CHINA UNIVERSITY OF TECHNOLOGY , SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Hong WANG , Quanbin ZHOU
IPC: H01L29/778 , H01L29/205 , H01L29/20 , H01L29/207 , H01L21/02
Abstract: An epitaxial structure of a GaN-based radio frequency device based on a Si substrate and a manufacturing method thereof are provided. The epitaxial structure is composed of a Si substrate (1), an AlN nucleation layer (2), AlGaN buffer layers (3, 4, 5), a GaN:Fe/GaN high-resistance layer (6), a GaN superlattice layer (7), a GaN channel layer (8), an AlGaN barrier layer (9) and a GaN cap layer (10) which are stacked in turn from bottom to top, wherein the GaN:Fe/GaN high-resistance layer (6) is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately connected; the GaN superlattice layer (7) is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected.
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公开(公告)号：US20200223987A1
公开(公告)日：2020-07-16
申请号：US16650099
申请日：2018-12-27
Applicant: South China University of Technology National Science Park of South China University of Technology , Central Fortune Creation (Canton) Roadway Technology Co., Ltd.
Inventor： Jiangmiao YU , Guocheng SU , Guangliang MO , Fuda CHEN , Lijuan CHEN , Jianyuan LU
Abstract: The modified asphalt provided by the disclosure is prepared from the following raw materials in parts by weight: 100 to 120 parts of asphalt, 6 to 20 parts of a modifier, 3 to 9 parts of a compatibilizer, 0.15 to 0.25 parts of sulfur, 0.4 to 0.6 parts of a non-amine anti-stripping agent and 0.2 to 0.4 parts of a coupling agent; and the modifier comprises a styrene-butadiene-styrene block copolymer, a rubber, and a polyurethane. The modified asphalt provided by the disclosure can simultaneously satisfy an elastic recovery at 25° C. of ≥98%, a dynamic viscosity at 60° C. of ≥500,000 Pa·s, a composite shear modulus at 60° C. of ≥10 Pa, and a critical temperature at W/Sin≥2.2 kPa of ≥94° C.
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公开(公告)号：US20250167550A1
公开(公告)日：2025-05-22
申请号：US18757446
申请日：2024-06-27
Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY
Inventor： Haoyong CHEN , Baomin LI , He’nan HU , Zhi LI , Weichao WANG
Abstract: Disclosed is a system and a method for blockchain-based virtual power plant management, relating to the field of virtual power plants. The system mainly includes three modules: an event-driven based demand rapid response and flexible resource optimal allocation module configured to adjust power supply and demand in real time according to power demand information and available resource information of an industrial park; a blockchain-based data collaboration module configured to establish a data sharing and transaction environment among various participants of a virtual power plant; and a visualization management module configured to provide a user interface for displaying, in real time, operational status and power transactions of the virtual power plant in the user interface. The system can effectively manage virtual power plants, enhancing the efficiency and transparency of power supply.
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