公开(公告)号：US09401530B2

公开(公告)日：2016-07-26

申请号：US13143477

申请日：2009-12-21

Applicant: Yeon soo Han ,  Sang Youl Lee ,  Woo Jong Lim

Inventor： Yeon soo Han ,  Sang Youl Lee ,  Woo Jong Lim

IPC: H02J7/00 ,  H02J7/04 ,  H01M10/54 ,  H01M10/42

CPC classification number: H01M10/54 ,  H01M10/4242 ,  H01M2220/20 ,  H02J7/0075 ,  H02J7/0086 ,  H02J7/0091 ,  Y02W30/84

Abstract: Disclosed herein is a storage battery recycling apparatus in which a pulse current is applied to polar plates or electrodes of a storage battery functioning as a secondary cell through the SCR phase control so as to remove sulfate formed in a film or membrane on the electrodes of the storage battery, thereby recovering the performance of the storage battery in a deteriorated state. The inventive storage battery recycling apparatus includes: a transformer unit 200 for transforming a commercial AC power voltage supplied thereto from an external power source through a power input unit 100; an SCR driving unit 400 for converting the AC power voltage transformed by the transformer unit 200 into a voltage having a pulse waveform through the SCR phase control; an output terminal 500 adapted to be in close contact with the electrodes of the storage battery for supplying the converted pulse voltage outputted from the SCR driving unit 400 to the electrodes of the storage battery so as to charge the storage battery; an SCR controller 300 for controlling the operation of the SCR driving unit 400; a setting unit 600 and a display unit 650 for setting and displaying the operational environment of the storage battery recycling apparatus; a voltage detecting unit 900 and a current detecting unit 950 for detecting the voltage and current of the storage battery; and a microcomputer 700 for controlling the operation of each of the constituent elements.

Abstract translation: 这里公开了一种蓄电池回收设备，其中通过SCR相位控制将脉冲电流施加到用作二​​次电池的蓄电池的极板或电极上，以便去除形成在电极上的膜或膜中的硫酸盐 从而在劣化状态下恢复蓄电池的性能。 本发明的蓄电池回收装置包括：变压器单元200，用于通过电力输入单元100将从外部电源提供的商用AC电力电压变换; SCR驱动单元400，用于通过SCR相位控制将由变压器单元200变换的AC电压转换成具有脉冲波形的电压; 输出端子500，其适于与蓄电池的电极紧密接触，用于将从SCR驱动单元400输出的转换脉冲电压提供给蓄电池的电极，以对蓄电池充电; 用于控制SCR驱动单元400的操作的SCR控制器300; 设置单元600和用于设置和显示蓄电池回收设备的操作环境的显示单元650; 用于检测蓄电池的电压和电流的电压检测单元900和电流检测单元950; 以及用于控制每个组成元件的操作的微计算机700。

公开(公告)号：US08975650B2

公开(公告)日：2015-03-10

申请号：US13563328

申请日：2012-07-31

Applicant: Sang Youl Lee

Inventor： Sang Youl Lee

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/32

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/38

Abstract: A semiconductor light emitting device that includes: a light emitting structure; an electrode layer under the light emitting structure; a light transmitting layer under of the light emitting structure; a reflective electrode layer connected to the electrode layer; and a conductive supporting member under the reflective electrode layer and electrically connected to the reflective electrode layer. The reflective electrode layer includes a first part in contact with an under surface of the electrode layer and a second part spaced apart from the electrode layer. A portion of the light transmitting layer is physically contacted with an outer side of the electrode layer and is physically contacted with the lower surface of the light emitting structure. The conductive supporting member has a thickness thicker than a thickness of the light transmitting layer.

Abstract translation: 一种半导体发光器件，包括：发光结构; 在发光结构下方的电极层; 在发光结构下方的透光层; 与电极层连接的反射电极层; 以及在反射电极层下面的导电支撑构件，并且电连接到反射电极层。 反射电极层包括与电极层的下表面接触的第一部分和与电极层间隔开的第二部分。 透光层的一部分与电极层的外侧物理接触并与发光结构的下表面物理接触。 导电支撑构件的厚度比透光层的厚度厚。

公开(公告)号：US08963179B2

公开(公告)日：2015-02-24

申请号：US13033264

申请日：2011-02-23

Applicant: Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon

Inventor： Kwang Ki Choi ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song ,  Ji Hyung Moon

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/22 ,  H01L33/42 ,  B82Y20/00

CPC classification number: H01L33/42 ,  B82Y20/00 ,  F21K9/23 ,  F21W2131/103 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.

Abstract translation: 公开了一种发光器件和发光器件封装。 发光器件包括第一电极，在第一电极上包括第一半导体层，有源层和第二半导体层的发光结构，在发光结构上包括多个碳纳米管的纳米管层 ，以及在发光结构上的第二电极。

公开(公告)号：US08853731B2

公开(公告)日：2014-10-07

申请号：US13419120

申请日：2012-03-13

Applicant: Sang Youl Lee ,  Jun Ho Song

Inventor： Sang Youl Lee ,  Jun Ho Song

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L2224/48091 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device including a bonding layer; a barrier layer on the bonding layer; an adhesion layer on the barrier layer, in which the adhesion layer includes Pd, Au, and Sn; a reflective layer on the adhesion layer, in which the reflective layer includes Ag; an ohmic contact layer on the reflective layer, in which the ohmic contact layer includes Pt and Ag; a light emitting structure layer on the ohmic contact layer; and a passivation layer includes an insulating material on a side surface and a top surface of the light emitting structure layer.

Abstract translation: 1.一种发光器件，包括：接合层; 接合层上的阻挡层; 阻挡层上的粘合层，其中粘合层包括Pd，Au和Sn; 粘合层上的反射层，其中反射层包括Ag; 反射层上的欧姆接触层，其中欧姆接触层包括Pt和Ag; 欧姆接触层上的发光结构层; 并且钝化层在发光结构层的侧表面和顶表面上包括绝缘材料。

公开(公告)号：US08803174B2

公开(公告)日：2014-08-12

申请号：US13040984

申请日：2011-03-04

Applicant: Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi ,  Dae Sung Kang

Inventor： Hwan Hee Jeong ,  Sang Youl Lee ,  Ji Hyung Moon ,  June O Song ,  Kwang Ki Choi ,  Dae Sung Kang

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/36 ,  H01L33/44

CPC classification number: H01L33/0079 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/36 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12032 ,  H01L2933/0058 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed is a method of manufacturing a light emitting device. The light emitting device includes a nitride semiconductor layer, an electrode on the nitride semiconductor layer, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer under the nitride semiconductor layer, and a conductive layer under the light emitting structure. The nitride semiconductor layer has band gap energy lower than band gap energy of the first conductive type semiconductor layer.

Abstract translation: 公开了一种制造发光器件的方法。 发光器件包括氮化物半导体层，氮化物半导体层上的电极，在氮化物半导体层下面的包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构，以及导电 层下发光结构。 氮化物半导体层具有比第一导电型半导体层的带隙能量低的带隙能量。

公开(公告)号：US08766300B2

公开(公告)日：2014-07-01

申请号：US13189226

申请日：2011-07-22

Applicant: Hwan Hee Jeong ,  Kwang Ki Choi ,  June O Song ,  Sang Youl Lee

Inventor： Hwan Hee Jeong ,  Kwang Ki Choi ,  June O Song ,  Sang Youl Lee

IPC: H01L21/33

CPC classification number: H01L33/38 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first electrode disposed on the first conductive semiconductor layer, a reflective electrode disposed on the second conductive semiconductor layer, a channel layer disposed on the light emitting structure and surrounds the reflective electrode, and a support substrate connected to the channel layer through an adhesive layer.

Abstract translation: 公开了一种发光器件，其包括发光结构，其包括第一导电半导体层，有源层和第二导电半导体层，设置在第一导电半导体层上的第一电极，设置在第二导电半导体层上的反射电极， 设置在所述发光结构上并且包围所述反射电极的沟道层，以及通过粘合剂层连接到所述沟道层的支撑衬底。

公开(公告)号：US08674389B2

公开(公告)日：2014-03-18

申请号：US13339513

申请日：2011-12-29

Applicant: Hwan Hee Jeong ,  Ji Hyung Moon ,  Sang Youl Lee ,  June O Song

Inventor： Hwan Hee Jeong ,  Ji Hyung Moon ,  Sang Youl Lee ,  June O Song

IPC: H01L33/00

CPC classification number: H01L33/42 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer on an outer portion of the reflective layer, the protective layer including a first portion between the reflective layer and the second conductive layer, and a second portion that extends beyond the second conductive type semiconductor layer; and a light extraction structure including a compound semiconductor on the second portion of the protective layer.

Abstract translation: 公开了一种发光器件和发光器件封装。 发光器件包括在第一和第二导电类型半导体层之间包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光结构，第一导电类型半导体层上的电极，反射 在所述第二导电类型半导体层下面的层，在所述反射层的外部部分上的保护层，所述保护层包括在所述反射层和所述第二导电层之间的第一部分，以及延伸超过所述第二导电类型半导体的第二部分 层; 以及在保护层的第二部分上包括化合物半导体的光提取结构。

公开(公告)号：US08637876B2

公开(公告)日：2014-01-28

申请号：US12870911

申请日：2010-08-30

Applicant: Sang Youl Lee ,  Jung Hyeok Bae ,  Ji Hyung Moon ,  Juno Song

Inventor： Sang Youl Lee ,  Jung Hyeok Bae ,  Ji Hyung Moon ,  Juno Song

IPC: H01L29/18 ,  H01L33/00

CPC classification number: H01L33/48 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/382 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a plurality of light emitting cells including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode layer connected to the first conductive semiconductor layer of a first light emitting cell of the plural light emitting cells; a plurality of second electrode layers under the light emitting cells, a portion of the second electrode layers being connected to the first conductive semiconductor layer of an adjacent light emitting cells; a third electrode layer disposed under a last light emitting cell of the plural light emitting cells; a first electrode connected to the first electrode layer; a second electrode connected to the third electrode layer; an insulating layer around the first to third electrode layers; and a support member under the insulating layer.

Abstract translation: 公开了一种发光器件和具有该发光器件的发光器件封装。 发光器件包括多个发光单元，包括第一导电半导体层，有源层和第二导电半导体层; 连接到所述多个发光单元的第一发光单元的第一导电半导体层的第一电极层; 在所述发光单元的下方的多个第二电极层，所述第二电极层的一部分与相邻的发光单元的所述第一导电半导体层连接; 设置在所述多个发光单元的最后发光单元的下方的第三电极层; 连接到第一电极层的第一电极; 连接到第三电极层的第二电极; 围绕第一至第三电极层的绝缘层; 以及在绝缘层下方的支撑构件。

公开(公告)号：US08581277B2

公开(公告)日：2013-11-12

申请号：US13528453

申请日：2012-06-20

Applicant: Ji Hyung Moon ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song

Inventor： Ji Hyung Moon ,  Hwan Hee Jeong ,  Sang Youl Lee ,  June O Song

IPC: H01L33/00

CPC classification number: H01L33/58 ,  F21K9/23 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Disclosed are a light emitting device. The light emitting device includes a light emitting structure including a first and second conductive semiconductors, and an active layer; an insulating layer on a lateral surface of the light emitting structure; an electrode on the first conductive semiconductor layer; an electrode layer under the second conductive semiconductor layer; and a protective layer including a first portion between the light emitting structure and the electrode layer and a second portion extending outward beyond a lower surface of the light emitting structure, wherein the first conductive semiconductor layer includes a first top surface including a roughness on a first region, and a second top surface lower than the first region and being closer the lateral surface of the light emitting structure than the first region, wherein the second top surface is disposed on an edge portion of the first conductive semiconductor layer.

Abstract translation: 公开了一种发光器件。 发光器件包括包括第一和第二导电半导体的发光结构和有源层; 在所述发光结构的侧表面上的绝缘层; 第一导电半导体层上的电极; 第二导电半导体层下面的电极层; 以及包括发光结构和电极层之间的第一部分的保护层和向外延伸超过发光结构的下表面的第二部分，其中第一导电半导体层包括第一顶表面，第一顶表面包括在第一 以及比第一区域低的第二顶表面，并且比第一区域更靠近发光结构的侧表面，其中第二顶表面设置在第一导电半导体层的边缘部分上。

公开(公告)号：US08564738B2

公开(公告)日：2013-10-22

申请号：US13333593

申请日：2011-12-21

Applicant: Sang-Youl Lee ,  So Jung Kim ,  June O Song ,  Kwang Ki Choi

Inventor： Sang-Youl Lee ,  So Jung Kim ,  June O Song ,  Kwang Ki Choi

IPC: G02F1/1335

CPC classification number: H01L33/46 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a conductive support layer, a light emitting structure layer on the conductive support layer, a first transparent conductive layer and a second transparent conductive layer disposed between the conductive support layer and the light emitting structure layer, and an electrode on the light emitting structure layer.