Manufacturing method of aluminium nitride and aluminum nitride prepared by the same

    公开(公告)号:US10442692B2

    公开(公告)日:2019-10-15

    申请号:US15164887

    申请日:2016-05-26

    Applicant: Alcom Senus Corp.

    Abstract: The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 μm was heated to a temperature in a range of 595° C.˜900° C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.

    MANUFACTURING METHOD OF ALUMINIUM NITRIDE AND ALUMINUM NITRIDE PREPARED BY THE SAME

    公开(公告)号:US20170260050A1

    公开(公告)日:2017-09-14

    申请号:US15164887

    申请日:2016-05-26

    Applicant: Alcom Senus Corp.

    CPC classification number: C01B21/0722 C01P2002/72 C01P2004/03

    Abstract: The present invention relates to a method of manufacturing aluminum nitride and aluminum nitride prepared by the same. Pure aluminum powder having a median particle size (D50) of 1.52 μm was heated to a temperature in a range of 595° C.˜900° C. in a nitrogen containing atmosphere comprising nitrogen and argon gases, at atmospheric pressure for one hour to obtain aluminum nitride with a degree of nitridation exceeding 93%. According to the present invention aluminum nitride may be produced with high yield using a simple and inexpensive one-step heating method in a relatively short period of time.

Patent Agency Ranking