公开(公告)号：US09447948B2

公开(公告)日：2016-09-20

申请号：US14224891

申请日：2014-03-25

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Jin-Hua Wang ,  Hsueh-Hung Fu ,  Pei-Wen Ko ,  Chih-Hsuan Sun

IPC: F21V29/00 ,  F21V17/02 ,  F21K99/00 ,  F21V5/00 ,  F21V29/74 ,  F21V29/75 ,  F21V29/76 ,  F21V13/04 ,  F21W131/103 ,  F21Y101/02 ,  F21Y113/00

CPC classification number: F21V17/02 ,  F21K9/20 ,  F21K9/60 ,  F21V5/007 ,  F21V13/04 ,  F21V29/74 ,  F21V29/75 ,  F21V29/763 ,  F21V29/83 ,  F21W2131/103 ,  F21Y2101/00 ,  F21Y2113/00 ,  F21Y2115/10 ,  Y02B20/72

Abstract: The present disclosure involves a street light. The street light includes a base, a lamp post coupled to the base, and a lamp head coupled to the lamp post. The lamp head includes a housing and a plurality of LED light modules disposed within the housing. The LED light modules are separate and independent from each other. Each LED light module includes an array of LED that serve as light sources for the lamp. Each LED light module also includes a heat sink that is thermally coupled to the LED. The heat sink is operable to dissipate heat generated by the LED during operation. Each LED light module also includes a thermally conductive cover having a plurality of openings. Each LED is aligned with and disposed within a respective one of the openings.

Abstract translation: 本公开涉及路灯。 路灯包括基座，连接到基座的灯柱和联接到灯柱的灯头。 灯头包括壳体和设置在壳体内的多个LED灯模块。 LED灯模块是独立的并且彼此独立。 每个LED灯模块包括用作灯的光源的LED阵列。 每个LED灯模块还包括热耦合到LED的散热器。 散热器可操作以在操作期间散发由LED产生的热量。 每个LED灯模块还包括具有多个开口的导热盖。 每个LED与相应的一个开口对齐并设置在其中。

公开(公告)号：US09324910B2

公开(公告)日：2016-04-26

申请号：US14558798

申请日：2014-12-03

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsin-Hsien Wu ,  Chyi Shyuan Chern ,  Chun-Lin Chang ,  Ching-Wen Hsiao ,  Kuang-Huan Hsu

IPC: H01L29/06 ,  H01L33/22 ,  H01L21/265 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/22 ,  H01L21/2654 ,  H01L21/26546 ,  H01L21/26593 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32

Abstract: A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.

Abstract translation: 一种器件包括：衬底; 以及设置在所述衬底上的掺杂III-V化合物层; 其中：掺杂的III-V化合物层包括上边界; 上边界具有微粗糙纹理和位于其上的微粗糙纹理的宏观粗糙纹理; 并且上边界包括在上边界下方的掺杂III-V化合物层的剩余部分中不存在的掺杂离子。

公开(公告)号：US09232602B2

公开(公告)日：2016-01-05

申请号：US14197288

申请日：2014-03-05

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Wei-Yu Yeh ,  Chih-Hsuan Sun

IPC: H05B33/08

CPC classification number: H05B33/0863 ,  H05B33/0824 ,  H05B33/0869

Abstract: A light-emitting diode (LED) lamp includes a number of different color LEDs that can be turned on and off in different combinations using an external switch operable by a user. A user or a controller can adjust the color temperature of light output by the lamp. The color temperature change may be a user preference and can compensate for decreased phosphor efficiency over time.

Abstract translation: 发光二极管（LED）灯包括许多不同颜色的LED，可以使用可由用户操作的外部开关以不同的组合打开和关闭。 用户或控制器可以调节灯输出的光的色温。 色温变化可能是用户偏好，并且可以补偿随时间降低的磷光体效率。

公开(公告)号：US09214613B2

公开(公告)日：2015-12-15

申请号：US14267964

申请日：2014-05-02

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Ding-Yuan Chen ,  Chia-Lin Yu ,  Chen-Hua Yu ,  Wen-Chih Chiou

IPC: H01L33/60 ,  H01L33/08 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.

Abstract translation: 描述了用于制造发光装置的系统和方法。 优选实施例包括形成在基板上的多个LED。 每个LED优选地具有沿LED的侧壁的间隔物，并且在LED之间的基板上形成反射表面。 反射表面优选地位于比各个LED的有源层更低的位置。

公开(公告)号：US09136442B2

公开(公告)日：2015-09-15

申请号：US13750097

申请日：2013-01-25

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Jui-Ping Weng ,  Hsiao-Wen Lee ,  Chun-Chih Chang ,  Min-Sheng Wu ,  Hsin-Hsien Lee

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/50 ,  H01L25/075

CPC classification number: H01L33/50 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure involves a light-emitting diode (LED) packaging structure. The LED packaging structure includes a submount having a substrate and a plurality of bond pads on the substrate. The LED packaging structure includes a plurality of p-type LEDs bonded to the substrate through a first subset of the bond pads. The LED packaging structure includes a plurality of n-type LEDs bonded to the substrate through a second subset of the bond pads. Some of the bond pads belong to both the first subset and the second subset of the bond pads. The p-type LEDs and the n-type LEDs are arranged as alternating pairs. The LED packaging structure includes a plurality of transparent and conductive components each disposed over and electrically interconnecting one of the pairs of the p-type and n-type LEDs. The LED packaging structure includes one or more lenses disposed over the n-type LEDs and the p-type LEDs.

Abstract translation: 本公开涉及一种发光二极管（LED）封装结构。 LED封装结构包括具有衬底的基座和在衬底上的多个接合焊盘。 LED封装结构包括通过接合焊盘的第一子集结合到衬底的多个p型LED。 LED封装结构包括通过接合焊盘的第二子集结合到衬底的多个n型LED。 一些接合焊盘属于接合焊盘的第一子集和第二子集。 p型LED和n型LED布置为交替对。 LED封装结构包括多个透明和导电部件，每个透明和导电部件设置在一对p型和n型LED中的一个上并使其互连。 LED封装结构包括设置在n型LED和p型LED上的一个或多个透镜。

公开(公告)号：US09130115B2

公开(公告)日：2015-09-08

申请号：US14187438

申请日：2014-02-24

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Chen-Hua Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Chia-Lin Yu ,  Hung-Ta Lin

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L33/22 ,  H01L33/24 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。

公开(公告)号：US09117968B2

公开(公告)日：2015-08-25

申请号：US13834055

申请日：2013-03-15

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC: H01L33/00 ,  H01L33/20

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/0079

Abstract: A light-emitting diode structure includes an AuSn or AuIn-containing bonding layer over a substrate, a metal layer disposed over the bonding layer, a p-type doped gallium nitride (p-GaN) layer disposed over the metal layer, a n-type doped gallium nitride (n-GaN) layer approximate the p-GaN layer, a multiple quantum well structure disposed between the n-GaN and p-GaN layers, and a conductive contact disposed on the n-GaN layer. The n-GaN layer includes a rough surface with randomly distributed dips. The nano-sized dips have diameters distributed between about 100 nm and about 600 nm, have a dip density ranging from about 107 grains/cm2 to about 109 grains/cm2, and are spaced from each other with an average spacing S, average diameter D, and a ratio S/D that ranges between about 1.1 and about 1.5. The conductive contact is disposed on some of the nano-sized dips of the rough surface.

Abstract translation: 发光二极管结构包括在衬底上的AuSn或含AuIn的结合层，设置在所述接合层上的金属层，设置在所述金属层上的p型掺杂的氮化镓（p-GaN）层， 掺杂氮化镓（n-GaN）层近似于p-GaN层，设置在n-GaN和p-GaN层之间的多量子阱结构和设置在n-GaN层上的导电接触。 n-GaN层包括具有随机分布的凹陷的粗糙表面。 纳米尺寸浸渍剂的直径分布在约100nm至约600nm之间，浸渍密度范围为约107粒/ cm 2至约109粒/ cm 2，并且以平均间隔S，平均直径D ，S / D的范围为约1.1至约1.5。 导电触点设置在粗糙表面的一些纳米尺寸的凹部上。

公开(公告)号：US20150171266A1

公开(公告)日：2015-06-18

申请号：US14630714

申请日：2015-02-25

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Zhen-Yu Li ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo ,  Cindy Huichun Shu ,  Hsin-Chieh Huang

IPC: H01L33/00 ,  H01L29/66 ,  H01L21/02 ,  H01L33/12 ,  H01L21/268 ,  H01L21/306 ,  H01S5/343 ,  H01S5/02 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/02035 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/268 ,  H01L21/30604 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/12 ,  H01L33/20 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/34333

Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).

Abstract translation: 本公开涉及一种装置。 该装置包括具有前侧与前侧相对的后侧的基板。 基板包括从基板的背面形成的多个开口。 这些开口从平面图中共同地在基板的背面上限定图案。 在一些实施例中，衬底是硅衬底或碳化硅衬底。 与开口垂直对准的硅衬底的部分具有约100微米至约300微米的垂直尺寸。 在硅衬底的正面上形成III-V族化合物层。 III-V族化合物层是发光二极管（LED），激光二极管（LD）和高电子迁移率晶体管（HEMT）之一的组分。

公开(公告)号：US09035334B2

公开(公告)日：2015-05-19

申请号：US14174929

申请日：2014-02-07

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Chi-Xiang Tseng ,  Hsiao-Wen Lee ,  Min-Sheng Wu ,  Tien-Min Lin

IPC: H01L33/50 ,  H01L33/62 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/13 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: The present disclosure involves a method of packaging a light-emitting diode (LED). According to the method, a group of metal pads and a group of LEDs are provided. The group of LEDs is attached to the group of metal pads, for example through a bonding process. After the LEDs are attached to the metal pads, each LED is spaced apart from adjacent LEDs. Also according to the method, a phosphor film is coated around the group of LEDs collectively. The phosphor film is coated on top and side surfaces of each LED and between adjacent LEDs. A dicing process is then performed to slice through portions of the phosphor film located between adjacent LEDs. The dicing process divides the group of LEDs into a plurality of individual phosphor-coated LEDs.

Abstract translation: 本公开涉及封装发光二极管（LED）的方法。 根据该方法，提供一组金属焊盘和一组LED。 该组LED例如通过粘合工艺连接到金属焊盘组上。 LED连接到金属焊盘后，每个LED与相邻的LED间隔开。 同样根据该方法，荧光膜被集体涂覆在LED组上。 荧光膜被涂覆在每个LED的顶表面和侧表面上以及相邻的LED之间。 然后进行切割处理以切割位于相邻LED之间的部分荧光膜。 切割工艺将LED组分成多个单独的磷光体涂覆的LED。

公开(公告)号：US09029175B2

公开(公告)日：2015-05-12

申请号：US14084783

申请日：2013-11-20

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Hsin-Chieh Huang ,  Chao-Hsiung Wang

IPC: H01L33/00 ,  H01L33/50 ,  H01L27/15 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L33/502 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/504 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A photonic device generates light from a full spectrum of lights including white light. The device includes two or more LEDs grown on a substrate, each generating light of a different wavelength and separately controlled. A light-emitting structure is formed on the substrate and apportioned into the two or more LEDs by etching to separate the light-emitting structure into different portions. At least one of the LEDs is coated with a phosphor material so that different wavelengths of light are generated by the LEDs while the same wavelength of light is emitted from the light-emitting structure.

Abstract translation: 光子器件从包括白光的全光谱产生光。 该装置包括在基板上生长的两个或更多个LED，每个LED产生不同波长的光并分别控制。 在衬底上形成发光结构，并通过蚀刻分配到两个或更多个LED中，以将发光结构分离成不同的部分。 LED中的至少一个被磷光体材料涂覆，使得由发光结构发射相同波长的光的同时由LED产生不同波长的光。