公开(公告)号：US09312422B2

公开(公告)日：2016-04-12

申请号：US13991129

申请日：2011-11-29

Applicant: Kohei Miura ,  Hiroshi Inada ,  Yasuhiro Iguchi ,  Tadashi Saito

Inventor： Kohei Miura ,  Hiroshi Inada ,  Yasuhiro Iguchi ,  Tadashi Saito

IPC: H01L29/06 ,  H01L31/109 ,  B82Y20/00 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/075 ,  H01L21/02 ,  H01L31/0304 ,  H01L31/105 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/109 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02549 ,  H01L27/1446 ,  H01L27/1464 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/075 ,  H01L31/105 ,  H01L31/184 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

Abstract: A light receiving element includes an InP substrate that is transparent to light having a wavelength of 3 to 12 μm, a buffer layer located in contact with the InP substrate, and a light-receiving layer having a multiple quantum well structure, the light-receiving layer having a cutoff wavelength of 3 μm or more and being lattice-matched with the buffer layer. In the light receiving element, the buffer layer is epitaxially grown on the InP substrate while the buffer layer and the InP substrate exceed a range of a normal lattice-matching condition, and the buffer layer is constituted by a GaSb layer.

Abstract translation: 光接收元件包括对波长为3〜12μm的光透明的InP衬底，与InP衬底接触的缓冲层和具有多量子阱结构的光接收层，受光元件 具有3μm以上的截止波长并与缓冲层进行晶格匹配的层。 在光接收元件中，缓冲层在InP衬底上外延生长，而缓冲层和InP衬底超过正常晶格匹配条件的范围，缓冲层由GaSb层构成。

公开(公告)号：US08969851B2

公开(公告)日：2015-03-03

申请号：US12965660

申请日：2010-12-10

Applicant: Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

Inventor： Hiroshi Inada ,  Yasuhiro Iguchi ,  Youichi Nagai ,  Hiroki Mori ,  Kouhei Miura

IPC: H01L29/06 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 μm.

Abstract translation: 本发明提供了一种用于通过在从物体反射的近红外区域中接收光来捕获对象的图像的图像拾取装置。 图像拾取装置包括各自具有带隙波长为1.65至3.0μm的光接收层的半导体光接收元件。

公开(公告)号：US08822977B2

公开(公告)日：2014-09-02

申请号：US13806585

申请日：2011-06-15

Applicant: Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

Inventor： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Hideaki Nakahata ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC: H01L29/06 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  B82Y20/00

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/18 ,  H01L31/1844 ,  Y02E10/544

Abstract: A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.

Abstract translation: 提供了一种光电检测器和制造该光检测器的方法，其中从包括1.3μm到长波长侧的短波长侧的近红外区域抑制了灵敏度的变化。 光检测器在InP衬底上包括II型多量子阱结构的吸收层，其包括GaAsSb层和InGaAs层的重复结构，并且在包括1.3μm和2.0μm的波长的近红外区域中具有灵敏度 。 在1.3μm波长下的灵敏度与2.0μm波长下的灵敏度之比不小于0.5但不大于1.6。

公开(公告)号：US20130313521A1

公开(公告)日：2013-11-28

申请号：US14000187

申请日：2012-02-03

Applicant: Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

Inventor： Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii ,  Youichi Nagai ,  Hiroshi Inada ,  Yasuhiro Iguchi

IPC: H01L31/0352

CPC classification number: H01L31/035209 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01L31/035236 ,  H01L31/109 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode (10) according to the present invention includes a buffer layer (2) positioned on and in contact with an InP substrate (1), and an absorption layer (3) positioned on and in contact with the buffer layer, wherein the absorption layer includes 50 or more pairs in which a first semiconductor layer 3a and a second semiconductor layer 3b constitute a single pair, the first semiconductor layer 3a having a bandgap energy of 0.73 eV or less, the second semiconductor layer 3b having a larger bandgap energy than the first semiconductor layer 3a, and the first semiconductor layer 3a and the second semiconductor layer 3b constitute a strain-compensated quantum well structure and each have a thickness of 1 nm or more and 10 nm or less.

Abstract translation: 本发明的一个目的是提供例如在1.5μm至1.8μm的近红外波长范围内具有足够高灵敏度的光电二极管，并且可以具有低暗电流。 根据本发明的光电二极管（10）包括位于InP衬底（1）上并与InP衬底（1）接触的缓冲层（2）和位于缓冲层上并与缓冲层接触的吸收层（3），其中吸收 层包括50个或更多对，其中第一半导体层3a和第二半导体层3b构成单对，第一半导体层3a的带隙能为0.73eV以下，第二半导体层3b的带隙能量比 第一半导体层3a，第一半导体层3a和第二半导体层3b构成应变补偿量子阱结构，并且各自具有1nm以上且10nm以下的厚度。

公开(公告)号：US20130048838A1

公开(公告)日：2013-02-28

申请号：US13640922

申请日：2010-12-03

Applicant: Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

Inventor： Hiroki Mori ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai ,  Kouhei Miura ,  Hideaki Nakahata ,  Katsushi Akita ,  Takashi Ishizuka ,  Kei Fujii

IPC: H01L31/101 ,  H01L31/18 ,  H01L33/06

CPC classification number: H01L31/03046 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/1467 ,  H01L31/035236 ,  Y02E10/544 ,  Y02P70/521

Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38≦x≦0.68) layer and a GaAs1-ySby (0.25≦y≦0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

Abstract translation: 光接收元件包括InP衬底1，具有MQW且位于InP衬底1上的光接收层3，位于光接收层3上的接触层5，从 接触层5的表面与光接收层和与p型区域形成欧姆接触的p侧电极11。 光接收元件的特征在于MQW具有包括In x Ga 1-x As（0.38和nlE; x＆lt; lE; 0.68）层和GaAs1-ySby（0.25＆amp; nlE; y＆nlE; 0.73）层的层的叠层结构，并且在GaAs1 -ySby层，InP衬底侧的部分中的Sb含量y大于相对侧的部分中的Sb含量y。

公开(公告)号：US20130032780A1

公开(公告)日：2013-02-07

申请号：US13581863

申请日：2011-09-28

Applicant: Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Kei Fujii ,  Takashi Ishizuka ,  Katsushi Akita ,  Yasuhiro Iguchi ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L31/0352

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14652 ,  H01L29/15 ,  H01L31/105 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate 1, and includes a pixel P. The photodiode includes an absorption layer 3 of a type II MQW structure, which is located on the substrate 1. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers 3a and 3b. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer 3a has a higher potential of a valence band, is thinner than the thickness of the other layer 3b.

Abstract translation: 提供能够防止短波长侧的响应性劣化的光电二极管等，同时完全提高II型MQW结构的响应性。 光电二极管形成在III-V族化合物半导体衬底1上，并且包括像素P.光电二极管包括位于衬底1上的II型MQW结构的吸收层3.MWW结构包括五十个或更多个 两组不同类型的III-V族化合物半导体层3a和3b。 两层不同类型的III-V族化合物半导体层之一的厚度，其中层3a具有较高的价带电势，其厚度比另一层3b的厚度薄。

公开(公告)号：US08274127B2

公开(公告)日：2012-09-25

申请号：US12494393

申请日：2009-06-30

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1446 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

Abstract: A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit.

Abstract translation: 光电二极管阵列包括公共读出控制电路的基板; 以及排列在基板上并且各自包括吸收层的多个光电二极管，以及一对第一导电侧电极和第二导电侧电极。 在该光电二极管阵列中，每个光电二极管与相邻的光电二极管隔离，第一导电侧电极设置在第一导电型区域上，并且在所有光电二极管上共同电连接，第二导电侧电极设置在第二导电型电极上 导电型区域，并且分别电连接到读出控制电路的读出电极。

公开(公告)号：US08188559B2

公开(公告)日：2012-05-29

申请号：US13061367

申请日：2009-07-24

Applicant: Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L27/14 ,  H01L31/00

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/14683 ,  H01L31/03046 ,  H01L31/102 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same.A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3 having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016 cm−3 or less. A diffusion concentration distribution control layer 4 has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.

Abstract translation: 提供一种在近红外区域具有灵敏度并且容易获得良好的晶体质量的光接收元件，容易以高精度形成光接收元件的一维或二维阵列， 并且可以减小暗电流; 光接收元件阵列; 及其制造方法。 光接收元件包括其中具有pn结15的吸收层3的III-V族化合物半导体层叠结构，其中吸收层具有由III-V族化合物半导体构成的多量子阱结构，pn结 通过选择性地将杂质元素扩散到吸收层中，并且吸收层中的杂质元素的浓度为5×10 16 cm -3以下而形成。 扩散浓度分布控制层4在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与吸收层相邻的部分，杂质浓度低的部分。

公开(公告)号：US20110168895A1

公开(公告)日：2011-07-14

申请号：US13119619

申请日：2009-07-24

Applicant: Youichi Nagai ,  Yasuhiro Iguchi

Inventor： Youichi Nagai ,  Yasuhiro Iguchi

IPC: H01L31/0264 ,  G01N21/35

CPC classification number: G01N21/3563 ,  G01J3/02 ,  G01J3/0218 ,  G01J3/2803 ,  G01N21/359 ,  G01N33/025 ,  G01N2201/08 ,  G01N2201/129 ,  H01L27/14678 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/109 ,  Y02E10/544

Abstract: There is provided, for example, a food quality examination device configured to inspect the quality of food with high sensitivity using an InP-based photodiode in which a dark current is decreased without a cooling mechanism and the sensitivity is extended to a wavelength of 1.8 μm or more. An absorption layer has a multiquantum well structure composed of a III-V group semiconductor. A pn junction is formed by selectively diffusing an impurity element into the absorption layer. The concentration of the impurity in the absorption layer is 5×1016/cm3 or less. A diffusion concentration distribution control layer composed of III-V group semiconductor is disposed in contact with the absorption layer on a side of the absorption layer opposite the side adjacent to the InP substrate, the bandgap of the diffusion concentration distribution control layer is lower than that of the InP, the diffusion concentration distribution control layer has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, and the portion having a low impurity concentration. The food quality examination device receives light having at least one wavelength of 3 μm or less within the absorption band of water, thereby performing the inspection.

Abstract translation: 例如，提供了一种食品质量检查装置，其被配置为使用在没有冷却机构的情况下降低暗电流的InP基光电二极管以高灵敏度检查食品的质量，并且灵敏度延伸到1.8μm的波长 或者更多。 吸收层具有由III-V族半导体构成的多量子阱结构。 通过选择性地将杂质元素扩散到吸收层中而形成pn结。 吸收层中的杂质浓度为5×1016 / cm3以下。 由III-V族半导体构成的扩散浓度分布控制层与吸收层的与InP衬底相邻的一侧相反侧的吸收层配置，扩散浓度分布控制层的带隙比 的扩散浓度分布控制层在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与吸收层相邻的部分，该部分具有低 杂质浓度。 食品质量检查装置在水的吸收带内接收具有3μm以下的至少一个波长的光，从而进行检查。

公开(公告)号：US20110140082A1

公开(公告)日：2011-06-16

申请号：US13061367

申请日：2009-07-24

Applicant: Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

Inventor： Yasuhiro Iguchi ,  Kohei Miura ,  Hiroshi Inada ,  Youichi Nagai

IPC: H01L29/06

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/0262 ,  H01L21/02631 ,  H01L27/14683 ,  H01L31/03046 ,  H01L31/102 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

Abstract: Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same.A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layer 3 having a pn-junction 15 therein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junction 15 is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016 cm−3 or less. A diffusion concentration distribution control layer 4 has an n-type impurity concentration of 2×1015/cm3 or less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.

Abstract translation: 提供一种在近红外区域具有灵敏度并且容易获得良好的晶体质量的光接收元件，容易以高精度形成光接收元件的一维或二维阵列， 并且可以减小暗电流; 光接收元件阵列; 及其制造方法。 光接收元件包括其中具有pn结15的吸收层3的III-V族化合物半导体层叠结构，其中吸收层具有由III-V族化合物半导体构成的多量子阱结构，pn结 通过选择性地将杂质元素扩散到吸收层中，并且吸收层中的杂质元素的浓度为5×10 16 cm -3以下而形成。 扩散浓度分布控制层4在扩散前具有2×1015 / cm3以下的n型杂质浓度，扩散浓度分布控制层具有与吸收层相邻的部分，杂质浓度低的部分。