公开(公告)号：US10516022B2

公开(公告)日：2019-12-24

申请号：US15997307

申请日：2018-06-04

Applicant: ABB Schweiz AG

Inventor： Holger Bartolf ,  Munaf Rahimo ,  Lars Knoll ,  Andrei Mihaila ,  Renato Minamisawa

IPC: H01L21/00 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/739 ,  H01L21/02 ,  H01L21/04 ,  H01L21/265 ,  H01L21/266 ,  H01L21/302 ,  H01L21/308 ,  H01L29/08 ,  H01L29/20

Abstract: A wide bandgap semiconductor device is comprising an (n−) doped drift layer between a first main side and a second main side. On the first main side, n doped source regions are arranged which are laterally surrounded by p doped channel layers having a channel layer depth. P+ doped well layers having a well layer depth, which is at least as large as the channel layer depth is arranged at the bottom of the source regions. A p++ doped plug extends from a depth, which is at least as deep as the source layer depth and less deep than the well layer depth, to a plug depth, which is as least as deep as the well layer depth, and having a higher doping concentration than the well layers, is arranged between the source regions and well layers. On the first main side, an ohmic contact contacts as a first main electrode the source regions, the well layers and the plug.

公开(公告)号：US10361082B2

公开(公告)日：2019-07-23

申请号：US15997298

申请日：2018-06-04

Applicant: ABB Schweiz AG

Inventor： Holger Bartolf ,  Munaf Rahimo ,  Lars Knoll ,  Andrei Mihaila ,  Renato Minamisawa

IPC: H01L21/266 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/20

Abstract: A method of manufacturing a semiconductor device is provided with: (a) providing a wide bandgap substrate product, (b) for forming two channel layers applying a first mask and applying a p first dopant, for forming two source regions forming a second mask by applying a further layer on the lateral sides of the first mask and applying an n second dopant, for forming two well layers forming a third mask by removing such part of the second mask between the source regions and applying a p third dopant, wherein a well layer depth is at least as large as a channel layer depth, (c) after step (b) for forming a plug applying a fourth mask, which covers the source regions and the channel layers and applying a p fourth dopant to a greater depth than the well layer depth and with a higher doping concentration than the well layers; wherein the well layers surround the plug in the lateral direction and separate it from the two source regions.

公开(公告)号：US10553437B2

公开(公告)日：2020-02-04

申请号：US15996589

申请日：2018-06-04

Applicant: ABB Schweiz AG

Inventor： Holger Bartolf ,  Munaf Rahimo ,  Lars Knoll ,  Andrei Mihaila ,  Renato Minamisawa

IPC: H01L29/76 ,  H01L21/266 ,  H01L29/739 ,  H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L21/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/20

Abstract: A method of manufacturing a semiconductor device is provided with: (a) providing a wide bandgap substrate product, (b) forming source regions by applying a first mask with a first and second mask layer and applying an n dopant, forming a well layer by removing such part of the first mask, which is arranged between the two source regions, and applying a p dopant, forming two channel regions by forming a third mask by performing an etching step, by which the first mask layer is farther removed at the openings than the second mask layer, and then removing the second mask layer, wherein the remaining first mask layer forms a third mask and applying a p dopant, wherein a well layer depth is at least as large as a channel layer depth, (c) after step (b) for forming a plug applying a fourth mask, which covers the source regions and the channel layers and applying a p fourth dopant to a greater depth than the well layer depth and with a higher doping concentration than the well layers.

公开(公告)号：US20180350943A1

公开(公告)日：2018-12-06

申请号：US15997307

申请日：2018-06-04

Applicant: ABB Schweiz AG

Inventor： Holger Bartolf ,  Munaf Rahimo ,  Lars Knoll ,  Andrei Mihaila ,  Renato Minamisawa

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/45 ,  H01L29/417 ,  H01L21/768 ,  H01L21/308

Abstract: A wide bandgap semiconductor device is comprising an (n−) doped drift layer between a first main side and a second main side. On the first main side, n doped source regions are arranged which are laterally surrounded by p doped channel layers having a channel layer depth. P+ doped well layers having a well layer depth, which is at least as large as the channel layer depth is arranged at the bottom of the source regions. A p++ doped plug extends from a depth, which is at least as deep as the source layer depth and less deep than the well layer depth, to a plug depth, which is as least as deep as the well layer depth, and having a higher doping concentration than the well layers, is arranged between the source regions and well layers. On the first main side, an ohmic contact contacts as a first main electrode the source regions, the well layers and the plug.

公开(公告)号：US20180350602A1

公开(公告)日：2018-12-06

申请号：US15996589

申请日：2018-06-04

Applicant: ABB Schweiz AG

Inventor： Holger Bartolf ,  Munaf Rahimo ,  Lars Knoll ,  Andrei Mihaila ,  Renato Minamisawa

IPC: H01L21/266 ,  H01L29/66 ,  H01L29/78 ,  H01L29/739 ,  H01L29/10

CPC classification number: H01L21/266 ,  H01L21/0465 ,  H01L21/0485 ,  H01L21/049 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0821 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/1033 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7811

Abstract: A method of manufacturing a semiconductor device is provided with: (a) providing a wide bandgap substrate product, (b) forming source regions by applying a first mask with a first and second mask layer and applying an n dopant, forming a well layer by removing such part of the first mask, which is arranged between the two source regions, and applying a p dopant, forming two channel regions by forming a third mask by performing an etching step, by which the first mask layer is farther removed at the openings than the second mask layer, and then removing the second mask layer, wherein the remaining first mask layer forms a third mask and applying a p dopant, wherein a well layer depth is at least as large as a channel layer depth, (c) after step (b) for forming a plug applying a fourth mask, which covers the source regions and the channel layers and applying a p fourth dopant to a greater depth than the well layer depth and with a higher doping concentration than the well layers.

公开(公告)号：US20180286963A1

公开(公告)日：2018-10-04

申请号：US15997298

申请日：2018-06-04

Applicant: ABB Schweiz AG

Inventor： Holger Bartolf ,  Munaf Rahimo ,  Lars Knoll ,  Andrei Mihaila ,  Renato Minamisawa

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/08 ,  H01L21/04 ,  H01L29/36 ,  H01L29/06 ,  H01L29/16 ,  H01L29/78 ,  H01L29/739

CPC classification number: H01L21/266 ,  H01L21/0465 ,  H01L21/0485 ,  H01L21/049 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0821 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/1033 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7811

Abstract: A method of manufacturing a semiconductor device is provided with: (a) providing a wide bandgap substrate product, (b) for forming two channel layers applying a first mask and applying a p first dopant, for forming two source regions forming a second mask by applying a further layer on the lateral sides of the first mask and applying an n second dopant, for forming two well layers forming a third mask by removing such part of the second mask between the source regions and applying a p third dopant, wherein a well layer depth is at least as large as a channel layer depth, (c) after step (b) for forming a plug applying a fourth mask, which covers the source regions and the channel layers and applying a p fourth dopant to a greater depth than the well layer depth and with a higher doping concentration than the well layers; wherein the well layers surround the plug in the lateral direction and separate it from the two source regions.