公开(公告)号：US08829563B2

公开(公告)日：2014-09-09

申请号：US13974178

申请日：2013-08-23

Applicant: ABB Technology AG

Inventor： Munaf Rahimo ,  Marco Bellini ,  Maxi Andenna ,  Friedhelm Bauer ,  Iulian Nistor

IPC: H01L29/66 ,  H01L29/08

CPC classification number: H01L29/0813 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/7395 ,  H01L29/7397

Abstract: An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

Abstract translation: 公开了一种绝缘栅极双极器件，其可以包括以下顺序在发射极侧的发射极和集电极侧的集电极之间具有不同导电类型的层：第一导电类型的源极区域，第一导电类型的基极层 在接触区域中与发射极接触的第二导电类型，第一导电类型的增强层，具有补偿层厚度tp的第二导电类型的浮置补偿层，具有较低掺杂的第一导电类型的漂移层 浓度比增强层和第二导电类型的集电极层。

公开(公告)号：US09683898B2

公开(公告)日：2017-06-20

申请号：US15078588

申请日：2016-03-23

Applicant: ABB Technology AG

Inventor： Vinoth Sundaramoorthy ,  Enea Bianda ,  Richard Bloch ,  Iulian Nistor ,  Gerold Knapp

IPC: G01K7/00 ,  G01K7/01

CPC classification number: G01K7/01

Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE′) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE′) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE′).

公开(公告)号：US20160300904A1

公开(公告)日：2016-10-13

申请号：US15184261

申请日：2016-06-16

Applicant: ABB Technology AG

Inventor： Marina Antoniou ,  Florin Udrea ,  Iulian Nistor ,  Munaf Rahimo ,  Chiara Corvasce

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/66 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/0619 ,  H01L29/0623 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813

Abstract: A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field plates, so as to obtain an improved distribution of potential field lines in the termination region. The combination of surface ring termination and deep ring termination offers a significant reduction in the amount silicon area which is required for the termination region.

Abstract translation: 描述了IGBT的终端区域，其中表面p环与氧化物/多晶硅填充的沟槽，埋入的p环和表面场板组合，以便获得终止区域中的电位场线的改进的分布。 表面环终止和深环终止的组合提供了终端区域所需的硅面积的显着减少。

公开(公告)号：US20130334566A1

公开(公告)日：2013-12-19

申请号：US13974178

申请日：2013-08-23

Applicant: ABB Technology AG

Inventor： Munaf RAHIMO ,  Marco Bellini ,  Maxi Andenna ,  Friedhelm Bauer ,  Iulian Nistor

IPC: H01L29/739

CPC classification number: H01L29/0813 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/7395 ,  H01L29/7397

Abstract: An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

Abstract translation: 公开了一种绝缘栅极双极器件，其可以包括以下顺序在发射极侧的发射极和集电极侧的集电极之间具有不同导电类型的层：第一导电类型的源极区域，第一导电类型的基极层 在接触区域中与发射极接触的第二导电类型，第一导电类型的增强层，具有补偿层厚度tp的第二导电类型的浮置补偿层，具有较低掺杂的第一导电类型的漂移层 浓度比增强层和第二导电类型的集电极层。