公开(公告)号：US09362376B2

公开(公告)日：2016-06-07

申请号：US14360473

申请日：2012-10-18

Applicant: ACORN TECHNOLOGIES, INC.

Inventor： Walter A Harrison ,  Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01L29/45 ,  H01L21/285 ,  H01L29/04 ,  H01L21/283

CPC classification number: H01L29/47 ,  H01L21/283 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/045 ,  H01L29/161 ,  H01L29/456

Abstract: Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

Abstract translation: 通过在金属和半导体之间的界面处插入V族或III族原子的单层或者插入由每个单层单层制成的双层来降低金属 - 半导体（IV族）结的特定接触电阻的技术， 或插入多个这样的双层。 所得到的低比电阻金属组IV半导体结可用作包括电子器件（例如，晶体管，二极管等）和光电器件（例如，激光器，太阳能电池，光电检测器等）的半导体器件中的低电阻电极， 和/或作为场效应晶体管（FET）中的金属源极和/或漏极区域（或其一部分）。 III族和V族原子的单层主要是在IV族半导体的表面上形成的化学键合到IV族半导体的表面原子上的原子的有序层。

公开(公告)号：US20140327142A1

公开(公告)日：2014-11-06

申请号：US14360473

申请日：2012-10-18

Applicant: ACORN TECHNOLOGIES, INC.

Inventor： Walter A Harrison ,  Paul A. Clifton ,  Andreas Goebel ,  R. Stockton Gaines

IPC: H01L29/45 ,  H01L21/283

CPC classification number: H01L29/47 ,  H01L21/283 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/045 ,  H01L29/161 ,  H01L29/456

Abstract: Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

Abstract translation: 通过在金属和半导体之间的界面处插入V族或III族原子的单层或者插入由每个单层单层制成的双层来降低金属 - 半导体（IV族）结的特定接触电阻的技术， 或插入多个这样的双层。 所得到的低比电阻金属组IV半导体结可用作包括电子器件（例如，晶体管，二极管等）和光电器件（例如，激光器，太阳能电池，光电检测器等）的半导体器件中的低电阻电极， 和/或作为场效应晶体管（FET）中的金属源极和/或漏极区域（或其一部分）。 III族和V族原子的单层主要是在IV族半导体的表面上形成的化学键合到IV族半导体的表面原子上的原子的有序层。