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    METHOD AND APPARATUS OF REMOVING A PASSIVATION FILM AND IMPROVING CONTACT RESISTANCE IN REAR POINT CONTACT SOLAR CELLS
    1.
    发明申请
    METHOD AND APPARATUS OF REMOVING A PASSIVATION FILM AND IMPROVING CONTACT RESISTANCE IN REAR POINT CONTACT SOLAR CELLS 审中-公开
    去除钝化膜的方法和装置，并改善后点接触太阳能电池的接触电阻

    公开(公告)号：US20130102109A1

    公开(公告)日：2013-04-25

    申请号：US13655170

    申请日：2012-10-18

    Applicant: Applied Materials, Inc.

    Inventor： Michael P. Stewart ,  Hari K. Ponnekanti ,  Prabhat Kumar ,  Jeffrey L. Franklin ,  Kapila P. Wijekoon

    IPC: H01L31/18

    CPC classification number: H01L31/02167 ,  H01L31/022425 ,  Y02E10/50

    Abstract: Embodiments of the present invention generally provide improved processes and apparatus for removing passivation layers from a surface of photovoltaic cells and improving contact resistance in rear point contact photovoltaic cells. In one embodiment, a method of processing a solar cell substrate includes providing a substrate having a passivation layer deposited on a first surface of the substrate. The passivation layer is a layer stack comprising an aluminum oxide and a silicon nitride. The method also includes exposing the first surface of the substrate to an etchant, and heating the etchant to dissolve the aluminum oxide of the passivation layer on the first surface. The method may further include forming a metal containing layer on a second surface of the substrate that is opposite to the first surface.

    Abstract translation: 本发明的实施例通常提供用于从光伏电池的表面去除钝化层的改进的工艺和装置，并且改善了后点接触光伏电池中的接触电阻。 在一个实施例中，处理太阳能电池基板的方法包括提供具有沉积在基板的第一表面上的钝化层的基板。 钝化层是包含氧化铝和氮化硅的层叠层。 该方法还包括将衬底的第一表面暴露于蚀刻剂，并加热蚀刻剂以溶解第一表面上钝化层的氧化铝。 该方法还可以包括在与第一表面相对的基板的第二表面上形成含金属层。

    Wafer coating
    4.
    发明授权
    Wafer coating 有权
    晶圆涂层

    公开(公告)号：US08991329B1

    公开(公告)日：2015-03-31

    申请号：US14169502

    申请日：2014-01-31

    Applicant: Applied Materials, Inc.

    Inventor： Jungrae Park ,  Wei-Sheng Lei ,  Prabhat Kumar ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

    IPC: B05C11/02 ,  B05C13/02 ,  H01L21/02 ,  B05C11/08 ,  B05C13/00

    CPC classification number: H01L21/02282 ,  B05B1/00 ,  B05B3/1014 ,  B05B3/1035 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/78 ,  H01L2221/68327

    Abstract: Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.

    Abstract translation: 描述了改进的晶片涂布工艺，装置和系统。 在一个实施例中，改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。 在一个实施例中，用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。 可旋转台具有位于半导体晶片周边之外的向下倾斜区域。 该设备包括位于可旋转台上方并被配置为在半导体晶片上分配液体的喷嘴。 该装置还包括构造成旋转可旋转台的马达。

    Methods of forming solar cells and solar cell modules
    6.
    发明授权
    Methods of forming solar cells and solar cell modules 有权
    形成太阳能电池和太阳能电池组件的方法

    公开(公告)号：US09040409B2

    公开(公告)日：2015-05-26

    申请号：US14213316

    申请日：2014-03-14

    Applicant: Applied Materials, Inc.

    Inventor： Prabhat Kumar ,  Michael P. Stewart ,  Kalyan Rapolu ,  Lin Zhang ,  Hari K. Ponnekanti

    IPC: H01L21/44 ,  H01L31/0224

    CPC classification number: H01L31/022425 ,  H01L31/049 ,  H01L31/0747 ,  H01L2224/73204 ,  H01L2224/83192 ,  H02S40/22 ,  Y02E10/52

    Abstract: Embodiments of the present invention are directed to processes for making solar cells by simultaneously co-firing metal layers disposed both on a first and a second surface of a bifacial solar cell substrate. Embodiments of the invention may also provide a method forming a solar cell structure that utilize a reduced amount of a silver paste on a front surface of the solar cell substrate and a patterned aluminum metallization paste on a rear surface of the solar cell substrate to form a rear surface contact structure. Embodiments can be used to form passivated emitter and rear cells (PERC), passivated emitter rear locally diffused solar cells (PERL), passivated emitter, rear totally-diffused (PERT), “iPERC,” Crystalline Reduced-cost Aluminum Fire-Through (CRAFT), pCRAFT, nCRAFT or other high efficiency cell concepts.

    Abstract translation: 本发明的实施例涉及通过同时共烧双极太阳能电池基板的第一和第二表面上的金属层来制造太阳能电池的方法。 本发明的实施例还可以提供一种形成太阳能电池结构的方法，该太阳能电池结构在太阳能电池基板的前表面上使用少量的银膏，并且​​在太阳能电池基板的背面上形成图案化的铝金属化浆料，以形成 后表面接触结构。 实施例可用于形成钝化发射器和后电池（PERC），钝化发射器后部局部扩散太阳能电池（PERL），钝化发射极，后部全扩散（PERT），“iPERC”，结晶降低成本的铝穿透 CRAFT），pCRAFT，nCRAFT或其他高效率单元概念。

    Screen print mask for laser scribe and plasma etch wafer dicing process
    7.
    发明授权
    Screen print mask for laser scribe and plasma etch wafer dicing process 有权
    激光划片和等离子体蚀刻晶圆切割工艺的屏幕打印掩模

    公开(公告)号：US09312177B2

    公开(公告)日：2016-04-12

    申请号：US14099707

    申请日：2013-12-06

    Applicant: Applied Materials, Inc.

    Inventor： Prabhat Kumar ,  Brad Eaton ,  Wei-Sheng Lei ,  James S. Papanu ,  Ajay Kumar

    IPC: H01L21/78 ,  H01L21/304 ,  H01L21/3065 ,  B41F15/08 ,  H01L21/67 ,  H01J37/32

    CPC classification number: H01L21/78 ,  B23K26/364 ,  B41F15/08 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/3043 ,  H01L21/3065 ,  H01L21/67207

    Abstract: Methods of using a screen-print mask for hybrid wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits separated by streets involves screen-printing a patterned mask above the semiconductor wafer, the patterned mask covering the integrated circuits and exposing the streets of the semiconductor wafer. The method also involves laser ablating the streets with a laser scribing process to expose regions of the semiconductor wafer between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the exposed regions of the semiconductor wafer to singulate the integrated circuits. The patterned mask protects the integrated circuits during the plasma etching.

    Abstract translation: 使用激光划线和等离子体蚀刻使用用于混合晶片切割的丝网印刷掩模的方法。 在一个示例中，对具有由街道分开的多个集成电路进行切割的半导体晶片的方法涉及在半导体晶片之上丝网印刷图案化掩模，该图案化掩模覆盖集成电路并暴露半导体晶片的街道。 该方法还涉及通过激光划线工艺激光烧蚀街道，以暴露集成电路之间的半导体晶片的区域。 该方法还包括通过半导体晶片的暴露区域等离子体蚀刻半导体晶片以对集成电路进行分离。 图案化掩模在等离子体蚀刻期间保护集成电路。

    Method of outgassing a mask material deposited over a workpiece in a process tool
    9.
    发明授权
    Method of outgassing a mask material deposited over a workpiece in a process tool 有权
    在工艺工具中放置沉积在工件上的掩模材料的方法

    公开(公告)号：US09412619B2

    公开(公告)日：2016-08-09

    申请号：US14458220

    申请日：2014-08-12

    Applicant: Applied Materials, Inc.

    Inventor： Prabhat Kumar ,  Wei-Sheng Lei ,  Martin S. Wohlert ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

    IPC: H01L21/20 ,  H01L21/322 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677

    CPC classification number: H01L21/3221 ,  H01L21/3081 ,  H01L21/67115 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67393 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/78

    Abstract: Embodiments of the invention include methods and apparatuses for outgassing a workpiece prior to a plasma processing operation. An embodiment of the invention may comprise transferring a workpiece having a mask to an outgassing station that has one or more heating elements. The workpiece may then be heated to an outgassing temperature that causes moisture from the mask layer to be outgassed. After outgassing the workpiece, the workpiece may be transferred to a plasma processing chamber. In an additional embodiment, one or more outgassing stations may be located within a process tool that has a factory interface, a load lock coupled to the factory interface, a transfer chamber coupled to the load lock, and a plasma processing chamber coupled to the transfer chamber. According to an embodiment, an outgassing station may be located within any of the components of the process tool.

    Abstract translation: 本发明的实施例包括在等离子体处理操作之前使工件脱气的方法和装置。 本发明的实施例可以包括将具有掩模的工件传送到具有一个或多个加热元件的除气站。 然后可以将工件加热到使得来自掩模层的水分脱气的除气温度。 在对工件进行放气之后，可以将工件转移到等离子体处理室。 在另外的实施例中，一个或多个除气站可以位于处理工具内，该工具具有出厂界面，耦合到出厂界面的负载锁，耦合到负载锁的传送室以及耦合到传送的等离子体处理室 房间。 根据实施例，除气站可以位于处理工具的任何部件内。

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