公开(公告)号：US20170243724A1

公开(公告)日：2017-08-24

申请号：US15416757

申请日：2017-01-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid Noorbakhsh ,  Xiaoping Zhou

IPC: H01J37/32 ,  B05B1/18 ,  B05B1/00

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side; a gas distribution plate disposed proximate the second side of the body and having an annular channel formed in a side surface; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the clamp includes a body and a protrusion extending radially inward into the annular groove, and wherein a portion of the gas distribution plate extends over a bottom surface of the clamp.

公开(公告)号：US20150316941A1

公开(公告)日：2015-11-05

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. SILVEIRA ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: G05D23/19 ,  H01J37/32

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

公开(公告)号：US20210032752A1

公开(公告)日：2021-02-04

申请号：US16526748

申请日：2019-07-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid Noorbakhsh ,  Xiaoping Zhou

IPC: C23C16/455

Abstract: Embodiments of a showerhead for use in a substrate processing chamber are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes an upper plate having an outer gas inlet fluidly coupled to an outer recursive gas path and an inner gas inlet fluidly coupled to an inner recursive gas path; and a lower plate having an upper surface bonded to the upper plate and a lower surface having a plurality of outer gas distribution holes and a plurality of inner gas distribution holes, wherein the upper surface includes an outer recess to define an outer annular gas plenum fluidly coupled to the outer gas inlet and to the plurality of outer gas distribution holes and an inner recess to define one or more inner annular gas plenums fluidly coupled to the inner gas inlet and to the plurality of inner gas distribution holes.

公开(公告)号：US10386126B2

公开(公告)日：2019-08-20

申请号：US15050419

申请日：2016-02-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kallol Bera ,  Xiaoping Zhou ,  Douglas A. Buchberger, Jr. ,  Andrew Nguyen ,  Hamid Tavassoli ,  Surajit Kumar ,  Shahid Rauf

IPC: F28F3/12 ,  F28F13/00

Abstract: Apparatus for controlling the thermal uniformity of a substrate can control the thermal uniformity of the substrate to be more uniform or to be non-uniform. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon. A flow path is disposed within the substrate support to flow a heat transfer fluid beneath the support surface. The flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length. The first portion is spaced about 2 mm to about 10 mm from the second portion. The first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

公开(公告)号：US10373810B2

公开(公告)日：2019-08-06

申请号：US15416757

申请日：2017-01-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid Noorbakhsh ,  Xiaoping Zhou

IPC: H01J37/32 ,  C23C16/455 ,  B05B1/18 ,  B05B1/00

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side; a gas distribution plate disposed proximate the second side of the body and having an annular channel formed in a side surface; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the clamp includes a body and a protrusion extending radially inward into the annular groove, and wherein a portion of the gas distribution plate extends over a bottom surface of the clamp.

公开(公告)号：US09991109B2

公开(公告)日：2018-06-05

申请号：US13886660

申请日：2013-05-03

Applicant: Applied Materials, Inc.

Inventor： Xiaoping Zhou ,  Jeffrey William Dietz

IPC: H01L21/02 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/02002 ,  H01J37/32477 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67253 ,  H01L21/6831

Abstract: Embodiments of the invention provide a method and apparatus, such as a processing chamber, suitable for etching high aspect ratio features. Other embodiments include a showerhead assembly for use in the processing chamber. In one embodiment, a processing chamber includes a chamber body having a showerhead assembly and substrate support disposed therein. The showerhead assembly includes at least two fluidly isolated plenums, a region transmissive to an optical metrology signal, and a plurality of gas passages formed through the showerhead assembly fluidly coupling the plenums to the interior volume of the chamber body.

公开(公告)号：US09214315B2

公开(公告)日：2015-12-15

申请号：US14580184

申请日：2014-12-22

Applicant: Applied Materials, Inc.

Inventor： Fernando M. Silveira ,  Hamid Tavassoli ,  Xiaoping Zhou ,  Shane C. Nevil ,  Douglas A. Buchberger ,  Brad L. Mays ,  Tina Tsong ,  Chetan Mahadeswaraswamy ,  Yashaswini B. Pattar ,  Duy D. Nguyen ,  Walter R. Merry

IPC: B23K10/00 ,  H01J37/20 ,  H05H1/34

CPC classification number: H01J37/20 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/32926 ,  H01J37/32935 ,  H01J2237/2001 ,  H05H1/34

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract translation: 通过脉冲施加加热功率和脉冲施加冷却功率来控制等离子体处理室中的温度的方法和系统。 在一个实施例中，温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 在另外的实施例中，耦合到温度受控部件的热储存器和冷储存器中的每一个中的流体水平部分地由耦合两个储存器的被动流平管道保持。 在另一个实施例中，数字传热流体流量控制阀以取决于加热/冷却占空比值的脉冲宽度和具有已经被发现提供良好的温度控制性能的持续时间的配比循环打开。

公开(公告)号：US10954595B2

公开(公告)日：2021-03-23

申请号：US16526748

申请日：2019-07-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid Noorbakhsh ,  Xiaoping Zhou

IPC: C23C16/40 ,  C23C16/455

Abstract: Embodiments of a showerhead for use in a substrate processing chamber are provided herein. In some embodiments, a showerhead for use in a substrate processing chamber includes an upper plate having an outer gas inlet fluidly coupled to an outer recursive gas path and an inner gas inlet fluidly coupled to an inner recursive gas path; and a lower plate having an upper surface bonded to the upper plate and a lower surface having a plurality of outer gas distribution holes and a plurality of inner gas distribution holes, wherein the upper surface includes an outer recess to define an outer annular gas plenum fluidly coupled to the outer gas inlet and to the plurality of outer gas distribution holes and an inner recess to define one or more inner annular gas plenums fluidly coupled to the inner gas inlet and to the plurality of inner gas distribution holes.

公开(公告)号：US10886107B2

公开(公告)日：2021-01-05

申请号：US16460987

申请日：2019-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Hamid Noorbakhsh ,  Xiaoping Zhou

IPC: H01J37/32 ,  C23C16/455 ,  B05B1/18 ,  B05B1/00

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side; a gas distribution plate disposed proximate the second side of the body and having an annular channel formed in a side surface; and a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body, wherein the clamp includes a body and a protrusion extending radially inward into the annular groove, and wherein a portion of the gas distribution plate extends over a bottom surface of the clamp.

公开(公告)号：US10770328B2

公开(公告)日：2020-09-08

申请号：US16121844

申请日：2018-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Xing Lin ,  Douglas A. Buchberger, Jr. ,  Xiaoping Zhou ,  Andrew Nguyen ,  Anchel Sheyner

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.