公开(公告)号：US20160273105A1

公开(公告)日：2016-09-22

申请号：US14660315

申请日：2015-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chris G. M. de Ridder ,  Lucian C. Jdira ,  Bert Jongbloed ,  Jeroen A. Smeltink

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/4584 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45563

Abstract: An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.

Abstract translation: 一种原子层沉积设备，包括可围绕中央沉积头轴线可旋转地安装并包括具有用于承载基底的上表面的基座的沉积头。 下表面包括多个处理部分。 每个处理部分包括净化气体注入区，第一前体气体注入区，排气区，吹扫气体注入区，第二前体气体注入区和排气区。 每个区域从沉积头的下表面的径向向内部分径向延伸到沉积头的下表面的径向向外部分。 选择下表面和上表面之间的距离，沉积头的旋转速度和吹扫气流的流速和压力的组合，使得基本上防止第一和第二前体气体混合。

公开(公告)号：US10954597B2

公开(公告)日：2021-03-23

申请号：US14660315

申请日：2015-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chris G. M. de Ridder ,  Lucian C. Jdira ,  Bert Jongbloed ,  Jeroen A. Smeltink

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B25/16 ,  H01L21/02 ,  H01J37/32 ,  F16J15/43

Abstract: An atomic layer deposition apparatus including a deposition head that is rotatably mounted around a central deposition head axis and including a susceptor having an upper surface for carrying substrates. The lower surface comprises a plurality of process sections. Each process section includes a purge gas injection zone, a first precursor gas injection zone, a gas exhaust zone, a purge gas injection zone, a second precursor gas injection zone and a gas exhaust zone. Each zone radially extends from a radially inward part of the lower surface to a radially outward part of the lower surface of the deposition head. The combination of distance between the lower surface and the upper surface, the rotational speed of the deposition head and the flow rate and the pressure of the purge gas flows are selected such that the first and second precursor gases are substantially prevented from mixing.