公开(公告)号：US20210366693A1

公开(公告)日：2021-11-25

申请号：US17307663

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee

IPC: H01J37/32

Abstract: A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.

公开(公告)号：US20230420227A1

公开(公告)日：2023-12-28

申请号：US18367200

申请日：2023-09-12

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  H01J37/32577 ,  H01J37/32935 ,  H01J37/32724 ,  H01J37/32082

Abstract: A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.

公开(公告)号：US11823876B2

公开(公告)日：2023-11-21

申请号：US17013386

申请日：2020-09-04

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee ,  WonKi Jeong

IPC: H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01J37/32449 ,  H01J37/32642 ,  H01J37/32669

Abstract: A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.

公开(公告)号：US11251068B2

公开(公告)日：2022-02-15

申请号：US16601593

申请日：2019-10-15

Applicant: ASM IP Holding B.V.

Inventor： JaeMin Roh ,  DaeYoun Kim ,  Julll Lee ,  ChangMin Lee

IPC: H01L21/687 ,  H01L21/68 ,  H01J37/32

Abstract: A substrate processing apparatus capable of improving thin film uniformity on a substrate by controlling the position of a substrate supporting apparatus includes a plurality of reactors, wherein each of the reactors includes a substrate supporting apparatus; a ring surrounding the substrate supporting apparatus; and an alignment device for moving the substrate supporting apparatus, wherein the ring is installed such that one surface of the ring comes in contact with the substrate supporting apparatus as the substrate supporting apparatus moves and the ring is movable by a pushing force of the substrate supporting apparatus.

公开(公告)号：US12119211B2

公开(公告)日：2024-10-15

申请号：US18367200

申请日：2023-09-12

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  H01J37/32082 ,  H01J37/32577 ,  H01J37/32724 ,  H01J37/32935

Abstract: A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.

公开(公告)号：US12062565B2

公开(公告)日：2024-08-13

申请号：US17848824

申请日：2022-06-24

Applicant: ASM IP Holding B.V.

Inventor： Joaquin Aguilar Santillan ,  Hong Gao ,  Shanker Kuttath ,  ChangMin Lee

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/67103 ,  H01L21/67248

Abstract: Electrostatic chucks and methods of using electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a heating element embedded within the ceramic body, and two or more temperature measurement devices embedded within the ceramic body. Exemplary methods include measuring temperatures within the electrostatic chuck using two or more vertically spaced-apart temperature measurement devices.

公开(公告)号：US20220336240A1

公开(公告)日：2022-10-20

申请号：US17721892

申请日：2022-04-15

Applicant: ASM IP Holding B.V.

Inventor： JaeMin Roh ,  ChangMin Lee

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/68

Abstract: A substrate processing apparatus capable of improving the uniformity of thin films on a substrate includes: a substrate support unit having a first slope; and a flow control ring arranged to surround the substrate support unit and having a second slope, wherein, during alignment, as the substrate support unit moves in a first direction, the first slope and the second slope contact each other, and due to the contact, the flow control ring slides in a second direction that is different from the first direction.

公开(公告)号：US20210074527A1

公开(公告)日：2021-03-11

申请号：US17013386

申请日：2020-09-04

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee ,  WonKi Jeong

IPC: H01J37/32

Abstract: A substrate processing apparatus capable of processing a thin film to have improved quality through uniform exhaustion includes: a substrate supporting unit; a processing unit on the substrate supporting unit; an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit; an exhaust port connected to at least a portion of the exhaust unit; and a flow control unit disposed in an exhaust channel from a space inside the exhaust unit to the exhaust port.

公开(公告)号：US20230389134A1

公开(公告)日：2023-11-30

申请号：US18201601

申请日：2023-05-24

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee ,  Joaquin Aguilar Santillan ,  Nobuaki Tanabe ,  Hong Gao ,  Shanker Kuttath

IPC: H05B3/28 ,  C04B35/581 ,  C04B35/645 ,  C04B37/02 ,  H01L21/687

CPC classification number: H05B3/283 ,  C04B35/581 ,  C04B35/645 ,  C04B37/023 ,  H01L21/68757 ,  C04B2235/3865 ,  C04B2235/3206 ,  C04B2235/3222 ,  C04B2235/612 ,  C04B2237/366 ,  C04B2237/40 ,  C04B2237/80 ,  H05B2203/016 ,  H05B2203/017

Abstract: A method of manufacturing a heating block includes a first step of providing a ceramic material to a mold, a second step of sintering the ceramic material and forming a plate, and a third step of machining the plate. A shaft is connected to the plate in a fourth step, and rods are bonded to the plate in a fifth step of the method. Heating blocks and semiconductor processing systems having heating blocks are also described.

公开(公告)号：US11804364B2

公开(公告)日：2023-10-31

申请号：US17307663

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  H01J37/32082 ,  H01J37/32577 ,  H01J37/32724 ,  H01J37/32935

Abstract: A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.