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    SEMICONDUCTOR PROCESSING APPARATUS AND A METHOD FOR PROCESSING A SUBSTRATE
    3.
    发明申请
    SEMICONDUCTOR PROCESSING APPARATUS AND A METHOD FOR PROCESSING A SUBSTRATE 审中-公开

    公开(公告)号：US20190271078A1

    公开(公告)日：2019-09-05

    申请号：US15909705

    申请日：2018-03-01

    Applicant: ASM IP Holding B.V.

    Inventor： Petri Raisanen ,  David Marquardt ,  Thomas Aswad

    IPC: C23C16/44 ,  C23C16/56 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

    Semiconductor processing apparatus and a method for processing a substrate
    4.
    发明授权
    Semiconductor processing apparatus and a method for processing a substrate 有权

    公开(公告)号：US11473195B2

    公开(公告)日：2022-10-18

    申请号：US15909705

    申请日：2018-03-01

    Applicant: ASM IP Holding B.V.

    Inventor： Petri Raisanen ,  David Marquardt ,  Thomas Aswad

    IPC: C23C16/44 ,  C23C16/56 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include, a reaction chamber and a susceptor dispose in the reaction chamber configured for supporting a substrate thereon, the susceptor comprising a plurality of through-holes in an axial direction of the susceptor. The apparatus may also include, a plurality of lift pins, each of the lift pins being disposed within a respective through-hole, and at least one gas transmitting channel comprising one or more gas channel outlets, the one or more gas channel outlets being disposed proximate to the through-holes. Methods for processing a substrate within a reaction chamber are also disclosed.

    Manifolds for uniform vapor deposition
    5.
    发明授权
    Manifolds for uniform vapor deposition 有权

    公开(公告)号：US10662527B2

    公开(公告)日：2020-05-26

    申请号：US15170639

    申请日：2016-06-01

    Applicant: ASM IP HOLDING B.V.

    Inventor： David Marquardt

    IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285

    Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

    MANIFOLDS FOR UNIFORM VAPOR DEPOSITION
    6.
    发明申请
    MANIFOLDS FOR UNIFORM VAPOR DEPOSITION 有权

    公开(公告)号：US20220349060A1

    公开(公告)日：2022-11-03

    申请号：US17810115

    申请日：2022-06-30

    Applicant: ASM IP HOLDING B.V.

    Inventor： David Marquardt ,  Andrew Michael Yednak, III ,  Eric James Shero ,  Herbert Terhorst

    IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285

    Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

    APPARATUS AND METHODS FOR ISOLATING A REACTION CHAMBER FROM A LOADING CHAMBER RESULTING IN REDUCED CONTAMINATION
    7.
    发明申请
    APPARATUS AND METHODS FOR ISOLATING A REACTION CHAMBER FROM A LOADING CHAMBER RESULTING IN REDUCED CONTAMINATION 有权

    公开(公告)号：US20210104427A1

    公开(公告)日：2021-04-08

    申请号：US17126750

    申请日：2020-12-18

    Applicant: ASM IP HOLDING B.V.

    Inventor： Carl Louis White ,  Kyle Fondurulia ,  John Kevin Shugrue ,  David Marquardt

    IPC: H01L21/687 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44 ,  H01L21/67

    Abstract: The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element. Some embodiments include two or more stacked sealing elements.

    APPARATUS AND METHODS FOR ISOLATING A REACTION CHAMBER FROM A LOADING CHAMBER RESULTING IN REDUCED CONTAMINATION
    8.
    发明申请
    APPARATUS AND METHODS FOR ISOLATING A REACTION CHAMBER FROM A LOADING CHAMBER RESULTING IN REDUCED CONTAMINATION 审中-公开

    公开(公告)号：US20190139808A1

    公开(公告)日：2019-05-09

    申请号：US16031613

    申请日：2018-07-10

    Applicant: ASM IP HOLDING B.V.

    Inventor： Carl Louis White ,  Kyle Fondurulia ,  John Kevin Shugrue ,  David Marquardt

    IPC: H01L21/687 ,  C23C16/458 ,  C23C16/455 ,  C23C16/44

    Abstract: The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element. Some embodiments include two or more stacked sealing elements.

    Manifolds for uniform vapor deposition
    9.
    发明授权
    Manifolds for uniform vapor deposition 有权

    公开(公告)号：US11377737B2

    公开(公告)日：2022-07-05

    申请号：US16854698

    申请日：2020-04-21

    Applicant: ASM IP HOLDING B.V.

    Inventor： David Marquardt

    IPC: C23C16/455 ,  H01L21/02 ,  H01L21/285

    Abstract: A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

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