公开(公告)号：US20230077088A1

公开(公告)日：2023-03-09

申请号：US17900065

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Arpita Saha ,  David de Roest ,  Michael Givens ,  Charles Dezelah ,  Monica Thukkaram ,  Daniele Piumi

IPC: G03F1/22

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the absorber layer underlying an extreme ultraviolet (EUV) photoresist are disclosed. Exemplary methods include forming the photoresist absorber layer or underlayer with an oxide of a high atomic number (z) element having an EUV cross section (σα) of greater than 2×106 cm2/mol and then forming the EUV photoresist over the high-z underlayer.

公开(公告)号：US20180308686A1

公开(公告)日：2018-10-25

申请号：US16018692

申请日：2018-06-26

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC: H01L21/02 ,  H01L29/417 ,  H01L29/36 ,  H01L21/265

Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US20230091094A1

公开(公告)日：2023-03-23

申请号：US17900578

申请日：2022-08-31

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Daniele Piumi ,  Yoann Tomczak ,  Ivan Zyulkov ,  Charles Dezelah ,  Arpita Saha ,  David de Roest ,  Jerome Innocent ,  Michael Givens ,  Monica Thukkaram

IPC: G03F7/11 ,  G03F7/16

Abstract: Methods of forming structures including a photoresist absorber layer and structures including the photoresist absorber layer are disclosed. Exemplary methods include forming the photoresist absorber layer that includes at least two elements having an EUV cross section (σα) of greater than 2×106 cm2/mol.

公开(公告)号：US10928731B2

公开(公告)日：2021-02-23

申请号：US16137974

申请日：2018-09-21

Applicant: ASM IP Holding B.V.

Inventor： Krzysztof Kachel ,  David de Roest

IPC: G03F7/16 ,  C23C16/455 ,  G03F1/72 ,  G03F7/40 ,  C23C16/40 ,  C23C16/04

Abstract: The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable material. Examples of the disclosure provide a method of forming a structure that includes providing the substrate with a infiltrateable material in a reaction chamber and infiltrating the infiltrateable material with infiltration material during one or more infiltration cycles.

公开(公告)号：US10784102B2

公开(公告)日：2020-09-22

申请号：US16280964

申请日：2019-02-20

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02 ,  H01L21/033

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.

公开(公告)号：US10665452B2

公开(公告)日：2020-05-26

申请号：US16018692

申请日：2018-06-26

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  David de Roest ,  Jacob Woodruff ,  Michael Eugene Givens ,  Jan Willem Maes ,  Timothee Blanquart

IPC: H01L21/02 ,  H01L21/265 ,  H01L29/36 ,  H01L29/417 ,  H01L21/225 ,  H01L29/08

Abstract: A method for improving source/drain performance through conformal solid state doping and its resulting device are disclosed. Specifically, the doping takes place through an atomic layer deposition of a dopant layer. Embodiments of the invention may allow for an increased doping layer, improved conformality, and reduced defect formation, in comparison to alternate doping methods, such as ion implantation or epitaxial doping.

公开(公告)号：US10269558B2

公开(公告)日：2019-04-23

申请号：US15388410

申请日：2016-12-22

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.

公开(公告)号：US10121699B2

公开(公告)日：2018-11-06

申请号：US15432263

申请日：2017-02-14

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532 ,  H01L21/283

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20190086807A1

公开(公告)日：2019-03-21

申请号：US16137974

申请日：2018-09-21

Applicant: ASM IP Holding B.V.

Inventor： Krzysztof Kachel ,  David de Roest

IPC: G03F7/16 ,  C23C16/455

Abstract: The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable material.

公开(公告)号：US20180182618A1

公开(公告)日：2018-06-28

申请号：US15388410

申请日：2016-12-22

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0234

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.