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    Method of depositing thin film
    4.
    发明授权
    Method of depositing thin film 有权
    沉积薄膜的方法

    公开(公告)号：US09330899B2

    公开(公告)日：2016-05-03

    申请号：US14067686

    申请日：2013-10-30

    Applicant: ASM IP Holding B.V.

    Inventor： In Soo Jung ,  Eun Kee Hong ,  Seung Woo Choi ,  Dong Seok Kang ,  Yong Min Yoo ,  Pei-Chung Hsiao

    IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/311

    CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/45529 ,  C23C16/45536 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31111

    Abstract: A method for forming a silicon germanium oxide thin film on a substrate in a reaction space may be performed using an atomic layer deposition (ALD) process. The process may include at least one cycle comprising a germanium oxide deposition sub-cycle and a silicon oxide deposition sub-cycle. The germanium oxide deposition sub-cycle may include contacting the substrate with a germanium reactant, removing excess germanium reactant, and contacting the substrate with a first oxygen reactant. The silicon oxide deposition sub-cycle may include contacting the substrate with a silicon reactant, removing excess silicon reactant, and contacting the substrate with a second oxygen reactant. The films of the present disclosure exhibit desirable etch rates relative to thermal oxide. Depending on the films' composition, the etch rates may be higher or lower than the etch rates of thermal oxide.

    Abstract translation: 可以使用原子层沉积（ALD）工艺在反应空间中的基板上形成氧化硅氧化物薄膜的方法。 该方法可以包括至少一个包括氧化锗沉积子循环和氧化硅沉积子循环的循环。 氧化锗沉积子循环可以包括使基底与锗反应物接触，除去过量的锗反应物，并使基底与第一氧反应物接触。 氧化硅沉积子循环可以包括使衬底与硅反应物接触，除去过量的硅反应物，并使衬底与第二氧反应物接触。 本公开的膜显示出相对于热氧化物的期望的蚀刻速率。 取决于膜的组成，蚀刻速率可以高于或低于热氧化物的蚀刻速率。

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