公开(公告)号：US11443926B2

公开(公告)日：2022-09-13

申请号：US16936343

申请日：2020-07-22

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: H01J37/32 ,  C23C16/44 ,  H01L21/67

Abstract: A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.

公开(公告)号：US20210035786A1

公开(公告)日：2021-02-04

申请号：US16938868

申请日：2020-07-24

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44 ,  C23C16/50

Abstract: A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reaction space, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.

公开(公告)号：US11430640B2

公开(公告)日：2022-08-30

申请号：US16938868

申请日：2020-07-24

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: C23C16/40 ,  H01J37/32 ,  H01L21/67 ,  C23C16/44 ,  C23C16/50

Abstract: A substrate processing apparatus having an improved exhaust structure includes a reaction space formed between a processing unit and a substrate support unit, an exhaust unit surrounding the reaction space, an exhaust port with a channel inside, a partition wall with an exhaust line inside, wherein the channel of the exhaust port connects the exhaust unit and the exhaust line.

公开(公告)号：US20210035785A1

公开(公告)日：2021-02-04

申请号：US16936343

申请日：2020-07-22

Applicant: ASM IP Holding B.V.

Inventor： WonKi Jeong ,  JuIll Lee ,  HaSeok Jang

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

Abstract: A substrate processing apparatus having an improved exhaust structure includes a grounded conductive extension portion configured to prevent generation of parasitic plasma in an exhaust space connected to a reaction space. The substrate processing apparatus prevents generation of parasitic plasma in an area, such as the reaction space, other than the reaction space. Thus, power loss may be prevented and a stable plasma process may be achieved.