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    Method of making a resistive random access memory
    4.
    发明授权
    Method of making a resistive random access memory 有权
    制造电阻式随机存取存储器的方法

    公开(公告)号：US09520562B2

    公开(公告)日：2016-12-13

    申请号：US14334536

    申请日：2014-07-17

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

    IPC: H01L45/00 ,  H01L21/02 ,  H01L27/24

    CPC classification number: H01L45/1616 ,  H01L21/02175 ,  H01L21/0228 ,  H01L27/249 ,  H01L45/08 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146 ,  H01L45/1608

    Abstract: The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer.

    Abstract translation: 所公开的技术通常涉及半导体器件，更具体地涉及电阻随机存取存储器件及其制造方法。 一方面，一种形成随机存取存储器件的电阻随机存取存储单元的方法包括：通过原子层沉积形成第一电极并形成包含棱镜元件的氧化物的电阻开关材料。 该方法还包括通过原子层沉积（ALD）形成包含棱镜元件的金属层。 电阻开关材料介于第一电极和金属层之间。

    Method for forming source/drain contact structure with chalcogen passivation
    5.
    发明授权
    Method for forming source/drain contact structure with chalcogen passivation 有权
    用硫化钼钝化形成源/漏接触结构的方法

    公开(公告)号：US09461134B1

    公开(公告)日：2016-10-04

    申请号：US14717553

    申请日：2015-05-20

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Fu Tang ,  Petri Raisanen ,  Jacob Woodruff ,  Jan Willem Maes ,  Michael Givens

    IPC: H01L21/44 ,  H01L29/45 ,  H01L21/02 ,  H01L21/285 ,  H01L29/16 ,  H01L29/08 ,  H01L29/66 ,  H01L23/31 ,  H01L23/29

    CPC classification number: H01L29/45 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/285 ,  H01L21/76831 ,  H01L23/291 ,  H01L23/485 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/16 ,  H01L29/66477 ,  H01L29/66568 ,  H01L29/78

    Abstract: In some embodiments, an MIS-type contact structure is formed by passivating the semiconductor surface of a source/drain region with a chalcogen, and subsequently depositing an tunnel layer by first exposing the chalcogen-passivated surface to a metal-organic precursor. Subsequently, deposition of the tunnel layer continues to a desired thickness. Preferably, the metal-organic precursor is part of a first set of ALD precursors and a second set of ALD precursors, which include one or more metal or semimetal precursors, are subsequently used to continue the deposition. For example, the metal-organic precursor may be used to deposit a first portion of the tunnel layer, and an inorganic metal or inorganic semimetal precursor or a different organic metal or organic semimetal precursor may be used to deposit a second portion of the tunnel layer. A metal is subsequently deposited on the tunnel layer, e.g., to form a metal electrode or electrical contact.

    Abstract translation: 在一些实施例中，通过用硫族元素钝化源极/漏极区域的半导体表面并随后通过首先将硫属软化钝化表面暴露于金属 - 有机前体而沉积隧道层来形成MIS型接触结构。 随后，隧道层的沉积继续到期望的厚度。 优选地，金属 - 有机前体是第一组ALD前体的一部分，并且随后使用包括一种或多种金属或半金属前体的第二组ALD前体来继续沉积。 例如，金属有机前体可以用于沉积隧道层的第一部分，并且可以使用无机金属或无机半金属前体或不同的有机金属或有机半金属前体来沉积隧道层的第二部分 。 随后在隧道层上沉积金属，例如形成金属电极或电接触。

    Method of making a resistive random access memory device
    9.
    发明授权
    Method of making a resistive random access memory device 有权
    制造电阻随机存取存储器件的方法

    公开(公告)号：US09472757B2

    公开(公告)日：2016-10-18

    申请号：US14334566

    申请日：2014-07-17

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

    IPC: H01L45/00 ,  H01L21/02 ,  H01L39/24

    CPC classification number: H01L45/146 ,  H01L21/02175 ,  H01L21/0228 ,  H01L39/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1641

    Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.

    Abstract translation: 所公开的技术通常涉及半导体处理领域，更具体地涉及电阻随机存取存储器以及用于制造这种存储器的方法。 一方面，一种制造存储单元的方法包括提供衬底并在衬底上提供第一电极。 该方法还包括通过原子层沉积沉积第一电极上的电阻式开关材料，其中电阻开关材料包括一种氧化物，该氧化物包括选自由As，Bi，Sb和P组成的组的pnictogen。电阻式开关材料 可以掺杂，例如用Sb或锑 - 金属合金。 第二电极可以形成在电阻开关材料之上并与电阻开关材料接触。

    METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE
    10.
    发明申请
    METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE 有权
    制造电阻随机访问存储器件的方法

    公开(公告)号：US20150021540A1

    公开(公告)日：2015-01-22

    申请号：US14334566

    申请日：2014-07-17

    Applicant: ASM IP Holding B.V.

    Inventor： Qi Xie ,  Jan Willem Maes ,  Tom Blomberg ,  Marko Tuominen ,  Suvi Haukka ,  Robin Roelofs ,  Jacob Woodruff

    IPC: H01L45/00

    CPC classification number: H01L45/146 ,  H01L21/02175 ,  H01L21/0228 ,  H01L39/249 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/14 ,  H01L45/1616 ,  H01L45/1641

    Abstract: The disclosed technology generally relates to the field of semiconductor processing and more particularly to resistive random access memory and methods for manufacturing such memory. In one aspect, a method of fabricating a memory cell includes providing a substrate and providing a first electrode on the substrate. The method additionally includes depositing, via atomic layer deposition, a resistive switching material on the first electrode, wherein the resistive switching material comprises an oxide comprising a pnictogen chosen from the group consisting of As, Bi, Sb, and P. The resistive switching material may be doped, e.g., with Sb or an antimony-metal alloy. A second electrode may be formed over and in contact with the resistive switching material.

    Abstract translation: 所公开的技术通常涉及半导体处理领域，更具体地涉及电阻随机存取存储器以及用于制造这种存储器的方法。 一方面，一种制造存储单元的方法包括提供衬底并在衬底上提供第一电极。 该方法还包括通过原子层沉积沉积第一电极上的电阻式开关材料，其中电阻开关材料包括一种氧化物，该氧化物包括选自由As，Bi，Sb和P组成的组的pnictogen。电阻式开关材料 可以掺杂，例如用Sb或锑 - 金属合金。 第二电极可以形成在电阻开关材料之上并与电阻开关材料接触。

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