公开(公告)号：US09023737B2

公开(公告)日：2015-05-05

申请号：US13923197

申请日：2013-06-20

Applicant: ASM IP Holding B.V.

Inventor： Julien Beynet ,  Ivo Raaijmakers ,  Atsuki Fukazawa

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/02318 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348

Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.

Abstract translation: 一种形成共形，均匀的电介质膜的方法包括：通过使用含有硅和碳，氮，卤素，氢和/或氧的气体的循环沉积在衬底的沟槽和/或空穴中形成保形电介质膜， 在没有致孔剂气体的情况下; 并对保形电介质膜进行热处理，并继续进行热处理，超出了从膜中去除基本上所有不需要的碳的点，并进一步继续进行热处理，以使沉积在侧壁上的薄膜的一部分基本上均匀的膜性能 的沟槽和/或孔，并且一部分膜沉积在沟槽和/或孔的顶表面和底表面上。

公开(公告)号：US20140017908A1

公开(公告)日：2014-01-16

申请号：US13923197

申请日：2013-06-20

Applicant: ASM IP Holding B.V.

Inventor： Julien Beynet ,  Ivo Raaijmakers ,  Atsuki Fukazawa

IPC: H01L21/02

CPC classification number: H01L21/02318 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348

Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.

Abstract translation: 一种形成共形，均匀的电介质膜的方法包括：通过使用含有硅和碳，氮，卤素，氢和/或氧的气体的循环沉积在衬底的沟槽和/或空穴中形成保形电介质膜， 在没有致孔剂气体的情况下; 并对保形电介质膜进行热处理，并继续进行热处理，超出了从膜中去除基本上所有不需要的碳的点，并进一步继续进行热处理，以使沉积在侧壁上的薄膜的一部分基本上均匀的膜性能 的沟槽和/或孔，并且一部分膜沉积在沟槽和/或孔的顶表面和底表面上。