公开(公告)号：US11295980B2

公开(公告)日：2022-04-05

申请号：US16105802

申请日：2018-08-20

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US20190067014A1

公开(公告)日：2019-02-28

申请号：US16105761

申请日：2018-08-20

Applicant: ASM IP Holding B.V.

Inventor： Kiran Shrestha ,  Bhushan Zope ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/285 ,  H01L21/3213 ,  H01L23/532 ,  C23C16/14 ,  C23C16/455

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and partially filling the one or more gap features with a molybdenum metal film by a cyclical deposition-etch process, wherein a unit cycle of the cyclical deposition-etch process comprises: partially filling the one or more gap features with a molybdenum metal film by a performing at least one unit cycle of a first cyclical deposition process; and partially etching the molybdenum metal film. The methods may also include: filling the one or more gap features with molybdenum metal film by performing at least one unit cycle of a second cyclical deposition process. Semiconductor device structures including a gap fill molybdenum metal film disposed in one or more gap features in or on a surface of a substrate formed by the methods of the disclosure are also disclosed.

公开(公告)号：US20250029834A1

公开(公告)日：2025-01-23

申请号：US18908990

申请日：2024-10-08

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Shankar Swaminathan ,  Kiran Shrestha ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11581220B2

公开(公告)日：2023-02-14

申请号：US17151435

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US11056344B2

公开(公告)日：2021-07-06

申请号：US15691241

申请日：2017-08-30

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Qi Xie

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/08 ,  C23C16/02 ,  H01L21/28

Abstract: There is provided a method of forming a layer, comprising depositing a seed layer on the substrate and depositing a bulk layer on the seed layer. Depositing the seed layer comprises supplying a first precursor comprising metal and halogen atoms to the substrate; and supplying a first reactant to the substrate. Depositing the bulk layer comprises supplying a second precursor comprising metal and halogen atoms to the seed layer and supplying a second reactant to the seed layer.

公开(公告)号：US20200343358A1

公开(公告)日：2020-10-29

申请号：US16924595

申请日：2020-07-09

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US10607895B2

公开(公告)日：2020-03-31

申请号：US15707786

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC: H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L27/092

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20190153593A1

公开(公告)日：2019-05-23

申请号：US16258187

申请日：2019-01-25

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Suvi Haukka

IPC: C23C16/38 ,  C23C16/455

Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane precursor onto the substrate. A reaction between the metal halide precursor and the decaborane precursor forms a metal film, specifically a metal boride.

公开(公告)号：US20230352556A1

公开(公告)日：2023-11-02

申请号：US18217739

申请日：2023-07-03

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

CPC classification number: H01L29/517 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/02205 ,  H01L21/02175 ,  H01L29/66568 ,  C23C16/45525 ,  H01L29/4966 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US20210151352A1

公开(公告)日：2021-05-20

申请号：US17151435

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.