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公开(公告)号：US11530876B2
公开(公告)日：2022-12-20
申请号：US17236065
申请日：2021-04-21
Applicant: ASM IP Holding B.V.
Inventor： Melvin Verbaas , Christianus G. M. de Ridder
Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.
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公开(公告)号：US11417545B2
公开(公告)日：2022-08-16
申请号：US16872045
申请日：2020-05-11
Applicant: ASM IP Holding B.V.
Inventor： Melvin Verbaas
IPC: H01L21/67 , C23C16/48 , H01L21/687 , C23C16/458 , H01J37/32
Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.
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公开(公告)号：US12130084B2
公开(公告)日：2024-10-29
申请号：US17986113
申请日：2022-11-14
Applicant: ASM IP Holding B.V.
Inventor： Melvin Verbaas , Christianus G. M. de Ridder
CPC classification number: F27D3/0084 , H01L21/67109 , H01L21/67757 , F27D2003/166 , F27D2009/0075
Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.
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公开(公告)号：US12002661B2
公开(公告)日：2024-06-04
申请号：US17113392
申请日：2020-12-07
Applicant: ASM IP Holding B.V.
Inventor： Yukihiro Mori , Melvin Verbaas
IPC: H01J37/32 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/509 , C23C16/52 , H01L21/67
CPC classification number: H01J37/32724 , C23C16/45544 , C23C16/4583 , C23C16/4586 , C23C16/46 , C23C16/463 , C23C16/50 , C23C16/509 , C23C16/52 , H01J37/32009 , H01J37/3244 , H01J37/32715 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/67248 , C23C16/4412 , H01J2237/3321 , H01J2237/334
Abstract: A susceptor includes a plate part, a first heater for heating a first portion of the plate part, a second heater for heating a second portion of the plate part, and a heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part.
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公开(公告)号：US11976361B2
公开(公告)日：2024-05-07
申请号：US17714383
申请日：2022-04-06
Applicant: ASM IP Holding B.V.
Inventor： Eric James Shero , Robert Brennan Milligan , William George Petro , Eric Wang , Fred Alokozai , Dong Li , Hao Wang , Melvin Verbaas , Luping Li
IPC: C23C16/455 , C23C16/34 , C23C16/44 , C23C16/46 , C23C16/52
CPC classification number: C23C16/45565 , C23C16/34 , C23C16/4401 , C23C16/45544 , C23C16/46 , C23C16/52
Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.
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Patent Agency Ranking
公开(公告)号：US20190003052A1
公开(公告)日：2019-01-03
申请号：US15636307
申请日：2017-06-28
Applicant: ASM IP Holding B.V.
Inventor： Eric James Shero , Robert Brennan Milligan , William George Petro , Eric Wang , Fred Alokozai , Dong Li , Hao Wang , Melvin Verbaas , Luping Li
IPC: C23C16/455 , C23C16/34 , C23C16/458 , C23C16/52 , C23C16/46
Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C. The method may include, providing at least one substrate on a substrate support within the reaction space and controlling a temperature of the at least one chamber wall at least at those portions of the at least one chamber wall that is exposed to a vapor phase reactant and controlling a temperature of a showerhead. The method may also include, alternatively and sequentially feeding at least two vapor phase reactants into the reaction space, wherein the temperature of the showerhead is controlled to a temperature between approximately 80° C. and approximately 160° C.
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公开(公告)号：US12276023B2
公开(公告)日：2025-04-15
申请号：US16042791
申请日：2018-07-23
Applicant: ASM IP Holding B.V.
Inventor： Melvin Verbaas , Jereld Lee Winkler , John Kevin Shugrue , Carl Louis White
IPC: C23C16/455
Abstract: A showerhead assembly for distributing a gas within a reaction chamber is disclosed. The showerhead assembly may comprise: a chamber formed within the showerhead assembly and a gas distribution assembly adjacent to the chamber, wherein the gas distribution assembly comprises: a first gas distribution plate comprising a top surface and a bottom surface; and a second gas distribution plate comprising a top surface and a bottom surface, the second gas distribution plate being disposed over the top surface of the first gas distribution plate. The gas distribution assembly may further comprise: one or more heating structures disposed between the first gas distribution plate and the second gas distribution plate; and a plurality of apertures extending from the bottom surface of the first distribution plate to the top surface of the second gas distribution plate. Methods for controlling the temperature uniformity of a showerhead assembly utilized for distribution gas with a reaction chamber are also disclosed.
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公开(公告)号：US20210333049A1
公开(公告)日：2021-10-28
申请号：US17236065
申请日：2021-04-21
Applicant: ASM IP Holding B.V.
Inventor： Melvin Verbaas , Christianus G.M. de Ridder
IPC: F27D3/00 , H01L21/67 , H01L21/677
Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.
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公开(公告)号：US20200273729A1
公开(公告)日：2020-08-27
申请号：US16872045
申请日：2020-05-11
Applicant: ASM IP Holding B.V.
Inventor： Melvin Verbaas
IPC: H01L21/67 , C23C16/48 , H01L21/687 , C23C16/458
Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.
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公开(公告)号：US10692741B2
公开(公告)日：2020-06-23
申请号：US15672119
申请日：2017-08-08
Applicant: ASM IP Holding B.V.
Inventor： Melvin Verbaas
IPC: H01L21/67 , C23C16/48 , H01L21/687 , C23C16/458 , H01J37/32
Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.
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