公开(公告)号：US20170117203A1

公开(公告)日：2017-04-27

申请号：US15397319

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Petri Raisanen

IPC: H01L23/31 ,  C23C16/455 ,  C23C16/44 ,  H01L21/02

CPC classification number: H01L23/3171 ,  C23C16/4405 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67011 ,  H01L23/02 ,  H01L23/29 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US20170117202A1

公开(公告)日：2017-04-27

申请号：US15397237

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Xiaoqiang Jiang ,  Petri Raisanen ,  Pauline Calka

IPC: H01L23/31 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/3171 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/305 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/306 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L28/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US09911676B2

公开(公告)日：2018-03-06

申请号：US15397237

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Xiaoqiang Jiang ,  Petri Raisanen ,  Pauline Calka

IPC: H01L21/02 ,  H01L23/31 ,  H01L23/29 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L23/3171 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/305 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/306 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L28/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US10553424B2

公开(公告)日：2020-02-04

申请号：US16253759

申请日：2019-01-22

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael E. Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/02 ,  H01L29/778 ,  H01L29/267 ,  H01L21/28 ,  H01L29/22 ,  H01L29/66 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US09905492B2

公开(公告)日：2018-02-27

申请号：US15397319

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Petri Raisanen

IPC: H01L23/31 ,  H01L21/02 ,  H01L23/02 ,  H01L21/67 ,  H01L23/29 ,  H01L21/306 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/4405 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67011 ,  H01L23/02 ,  H01L23/29 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase sulfur precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US20200266054A1

公开(公告)日：2020-08-20

申请号：US16773635

申请日：2020-01-27

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael E. Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/02 ,  H01L29/267 ,  H01L29/778 ,  H01L21/28

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US10566223B2

公开(公告)日：2020-02-18

申请号：US15598169

申请日：2017-05-17

Applicant: ASM IP Holding B.V.

Inventor： Keith R. Lawson ,  Michael E. Givens

IPC: G06F19/00 ,  H01L21/67 ,  G05B19/418

Abstract: Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing too including a first process module and a second process module.

公开(公告)号：US20190259605A1

公开(公告)日：2019-08-22

申请号：US16253759

申请日：2019-01-22

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael E. Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/02 ,  H01L29/778 ,  H01L29/267 ,  H01L21/28

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US10199213B2

公开(公告)日：2019-02-05

申请号：US15651203

申请日：2017-07-17

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael E. Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/02 ,  H01L29/267 ,  H01L29/778 ,  H01L21/28 ,  H01L29/22 ,  H01L29/78 ,  H01L29/66

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

公开(公告)号：US20180068846A1

公开(公告)日：2018-03-08

申请号：US15651203

申请日：2017-07-17

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Fu Tang ,  Michael E. Givens ,  Jan Willem Maes ,  Qi Xie

IPC: H01L21/02 ,  H01L29/778 ,  H01L29/267 ,  H01L21/28 ,  H01L29/66 ,  H01L29/22 ,  H01L29/78

CPC classification number: H01L21/02175 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02334 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/28264 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/78

Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.