公开(公告)号：US20240321579A1

公开(公告)日：2024-09-26

申请号：US18608609

申请日：2024-03-18

Applicant: ASM IP Holding B.V.

Inventor： Devika Choudhury ,  Jereld Lee Winkler ,  Kamesh Mullapudi ,  Mihaela Balseanu ,  Michael Schmotzer

IPC: H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/02661 ,  H01L21/0332 ,  H01L21/31111 ,  H01L21/31144

Abstract: Methods for forming a semiconductor structure are disclosed. The methods include forming a bilayer hardmask by depositing a first hardmask layer and a second hardmask layer over a substrate including a first region and a second region. Exemplary structures formed can include CMOS device structures.

公开(公告)号：US11791153B2

公开(公告)日：2023-10-17

申请号：US17170742

申请日：2021-02-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02181 ,  H01L21/0228 ,  H01L21/02244 ,  H01L21/76837

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US10600673B2

公开(公告)日：2020-03-24

申请号：US14793323

申请日：2015-07-07

Applicant: ASM IP Holding B.V.

Inventor： Michael Schmotzer

IPC: H01L21/687 ,  H01L21/67 ,  C23C16/458

Abstract: A reaction system for processing semiconductor substrates is disclosed. In particular, the invention discloses an arrangement of a susceptor and a baseplate for when a substrate is placed into a reaction region. Magnets are embedded into the susceptor and the baseplate in order to create a gap between the two. As a result of the gap, the invention prevents an accumulation of gaseous materials that would exist in prior art systems as well as particle generation due to physical contact between parts.

公开(公告)号：US20210249263A1

公开(公告)日：2021-08-12

申请号：US17170742

申请日：2021-02-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US20170040206A1

公开(公告)日：2017-02-09

申请号：US14817953

申请日：2015-08-04

Applicant: ASM IP Holding B.V.

Inventor： Michael Schmotzer ,  Shawn Whaley

IPC: H01L21/687 ,  C23C16/458

CPC classification number: C23C16/4588 ,  C23C16/4401 ,  C23C16/4412 ,  H01L21/68735 ,  H01L21/68785

Abstract: A reaction system for processing semiconductor substrates is disclosed. The reaction system includes a susceptor for holding the substrate as well as a baseplate as a part of housing for the reaction system. A pin located on the susceptor can interact with a baseplate feature located on the baseplate to result in a variable gap between the susceptor and the baseplate. The baseplate feature may take the form of a series of steps, a wedge, or a milled-out feature.

Abstract translation: 公开了一种用于处理半导体衬底的反应系统。 反应系统包括用于保持基底的基座以及作为反应系统的壳体的一部分的基板。 位于基座上的销可以与位于基板上的底板特征相互作用，从而导致基座与底板之间的可变间隙。 底板特征可以采取一系列步骤，楔形或铣削特征的形式。

公开(公告)号：US12297533B2

公开(公告)日：2025-05-13

申请号：US17847306

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： Michael Schmotzer

IPC: C23C16/448 ,  B01J7/00

Abstract: A source vessel for use in a semiconductor processing system to supply precursor materials by providing enhanced control over vapor pressures. The source vessel includes a housing or vessel defining a chamber for holding a volume of precursor in a liquid state. The source vessel further includes a temperature sensor configured to detect a temperature of a surface of the liquid-state precursor that is presently contained within the chamber of the housing. The temperature sensor may take the form of a temperature measurement device such as a thermocouple on a float or a non-contact temperature measurement device such as an infrared (IR) temperature sensor with a line-of-sight to the liquid's surface.

公开(公告)号：US20220411925A1

公开(公告)日：2022-12-29

申请号：US17847306

申请日：2022-06-23

Applicant: ASM IP Holding B.V.

Inventor： Michael Schmotzer

IPC: C23C16/448 ,  B01J7/00

Abstract: A source vessel for use in a semiconductor processing system to supply precursor materials by providing enhanced control over vapor pressures. The source vessel includes a housing or vessel defining a chamber for holding a volume of precursor in a liquid state. The source vessel further includes a temperature sensor configured to detect a temperature of a surface of the liquid-state precursor that is presently contained within the chamber of the housing. The temperature sensor may take the form of a temperature measurement device such as a thermocouple on a float or a non-contact temperature measurement device such as an infrared (IR) temperature sensor with a line-of-sight to the liquid's surface.

公开(公告)号：US20170011950A1

公开(公告)日：2017-01-12

申请号：US14793323

申请日：2015-07-07

Applicant: ASM IP Holding B.V.

Inventor： Michael Schmotzer

IPC: H01L21/687 ,  H01L21/67

Abstract: A reaction system for processing semiconductor substrates is disclosed. In particular, the invention discloses an arrangement of a susceptor and a baseplate for when a substrate is placed into a reaction region. Magnets are embedded into the susceptor and the baseplate in order to create a gap between the two. As a result of the gap, the invention prevents an accumulation of gaseous materials that would exist in prior art systems as well as particle generation due to physical contact between parts.

Abstract translation: 公开了一种用于处理半导体衬底的反应系统。 特别地，本发明公开了一种用于当将基底放置在反应区域中时的基座和底板的布置。 将磁体嵌入到基座和底板中，以便在两者之间产生间隙。 作为间隙的结果，本发明防止了现有技术系统中将存在的气态材料的积聚以及由于部件之间的物理接触而产生的颗粒。

公开(公告)号：US20240254629A1

公开(公告)日：2024-08-01

申请号：US18631858

申请日：2024-04-10

Applicant: ASM IP Holding B.V.

Inventor： Ankit Kimtee ,  Rohan Vijay Rane ,  Herbert Terhorst ,  Eric James Shero ,  Jereld Lee Winkler ,  Michael Schmotzer ,  Shuyang Zhang ,  Todd Robert Dunn ,  Shubham Garg

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/46

Abstract: A susceptor assembly includes a heater pedestal and a cap coupled to the heater pedestal. The cap can include one or mor through holes to facilitate purging and/or reduce dead volumes associated with the susceptor assemblies. Reactor systems including such assemblies are also disclosed.

公开(公告)号：US20240076778A1

公开(公告)日：2024-03-07

申请号：US18239176

申请日：2023-08-29

Applicant: ASM IP Holding B.V.

Inventor： Jessica Akemi Cimada da Silva ,  Michael Schmotzer

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4585 ,  C23C16/45565 ,  C23C16/45591

Abstract: Various embodiments of the present technology may provide a system and apparatus for reaction chamber. The system and apparatus may contain a reaction chamber having a spacer plate disposed between a lower chamber of the reaction chamber and a showerhead. An active heating element may be embedded within the spacer plate. A flow control ring, disposed adjacent to the spacer plate, is heated by conduction from the spacer plate heating element.