公开(公告)号：US20250092513A1

公开(公告)日：2025-03-20

申请号：US18970001

申请日：2024-12-05

Applicant: ASM IP Holding B.V.

Inventor： Eric Christopher Stevens ,  Bhushan Zope ,  Shankar Swaminathan ,  Charles Dezelah ,  Qi Xie ,  Giuseppe Alessio Verni

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/08 ,  C23C16/455 ,  G11C5/06 ,  H01L21/28 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H10B12/00

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

公开(公告)号：US20250029834A1

公开(公告)日：2025-01-23

申请号：US18908990

申请日：2024-10-08

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Shankar Swaminathan ,  Kiran Shrestha ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US12203166B2

公开(公告)日：2025-01-21

申请号：US17307007

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Bhushan Zope ,  Shankar Swaminathan ,  Theodorus G. M. Oosterlaken

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

公开(公告)号：US12033885B2

公开(公告)日：2024-07-09

申请号：US17140661

申请日：2021-01-04

Applicant: ASM IP Holding B.V.

Inventor： Govindarajasekhar Singu ,  Dinkar Nandwana ,  Todd Robert Dunn ,  Shankar Swaminathan ,  Bhushan Zope ,  Carl Louis White

IPC: H01L21/687 ,  H01L21/683

CPC classification number: H01L21/68742 ,  H01L21/6838

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.

公开(公告)号：US20240200189A1

公开(公告)日：2024-06-20

申请号：US18586902

申请日：2024-02-26

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Carl Louis White ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/448 ,  H01L21/02

CPC classification number: C23C16/448 ,  H01L21/02271 ,  H01L21/0262

Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

公开(公告)号：US11946136B2

公开(公告)日：2024-04-02

申请号：US17014820

申请日：2020-09-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Eric James Shero ,  Carl Louis White ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/448 ,  H01L21/02

CPC classification number: C23C16/448 ,  H01L21/02271 ,  H01L21/0262

Abstract: A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

公开(公告)号：US20230369040A1

公开(公告)日：2023-11-16

申请号：US18225366

申请日：2023-07-24

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/36 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/45553 ,  C23C16/36 ,  H01L21/02274 ,  H01L21/76829 ,  H01L21/0228

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US11581220B2

公开(公告)日：2023-02-14

申请号：US17151435

申请日：2021-01-18

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Kiran Shrestha ,  Shankar Swaminathan ,  Chiyu Zhu ,  Henri Tuomas Antero Jussila ,  Qi Xie

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/14 ,  C23C16/02 ,  H01L23/532 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

公开(公告)号：US20210404060A1

公开(公告)日：2021-12-30

申请号：US17353356

申请日：2021-06-21

Applicant: ASM IP HOLDING B.V.

Inventor： Robert Brennan Milligan ,  Eric James Shero ,  Shankar Swaminathan ,  Bhushan Zope

IPC: C23C16/455 ,  C23C16/06

Abstract: Vapor deposition methods for depositing tungsten-containing thin films are provided. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten oxyhalide, a second reactant such as CO, and a third reactant such as H2. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten hexacarbonyl, a second reactant comprising a first oxidant, such as H2O, and a third reactant comprising a reducing agent, such as CO. In some embodiments the deposition process is an ALD process.

公开(公告)号：US20250101581A1

公开(公告)日：2025-03-27

申请号：US18973788

申请日：2024-12-09

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Bhushan Zope ,  Shankar Swaminathan ,  Theodorus G.M. Oosterlaken

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.