公开(公告)号：US11430656B2

公开(公告)日：2022-08-30

申请号：US15364024

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US20150140210A1

公开(公告)日：2015-05-21

申请号：US14606364

申请日：2015-01-27

Applicant: ASM IP HOLDING B.V.

Inventor： Sung-Hoon Jung ,  Petri Raisanen ,  Eric Jen Cheng Liu ,  Mike Schmotzer

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45544

Abstract: Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

Abstract translation: 公开了在反应器的反应室内减少物质的除气的系统和方法。 示例性方法包括在反应室内沉积阻挡层并使用清除前体与反应室表面上的物质反应。 示例性系统包括气相沉积系统，例如原子层沉积系统，其包括流体耦合到系统的反应室的阻挡层源和/或清除前体源。

公开(公告)号：US09790595B2

公开(公告)日：2017-10-17

申请号：US14606364

申请日：2015-01-27

Applicant: ASM IP Holding B.V.

Inventor： Sung-Hoon Jung ,  Petri Raisanen ,  Eric Jen Cheng Liu ,  Mike Schmotzer

IPC: C23C16/42 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45544

Abstract: Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

公开(公告)号：US20180151345A1

公开(公告)日：2018-05-31

申请号：US15364024

申请日：2016-11-29

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C14/08 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/042 ,  C23C16/40 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US20180108587A1

公开(公告)日：2018-04-19

申请号：US15673278

申请日：2017-08-09

Applicant: ASM IP Holding B.V.

Inventor： Xiaoqiang Jiang ,  Fu Tang ,  Qi Xie ,  Pauline Calka ,  Sung-Hoon Jung ,  Michael Eugene Givens

IPC: H01L23/31 ,  H01L21/02 ,  H01L23/29 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/305 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67017 ,  H01L21/67155 ,  H01L21/6719 ,  H01L23/291 ,  H01L29/66477

Abstract: A system and a method for passivating a surface of a semiconductor. The method includes providing the surface of the semiconductor to a reaction chamber of a reactor, exposing the surface of the semiconductor to a gas-phase metal containing precursor in the reaction chamber and exposing the surface of the semiconductor to a gas-phase chalcogenide containing precursor. The methods also include passivating the surface of the semiconductor using the gas-phase metal containing precursor and the gas-phase chalcogenide containing precursor to form a passivated surface. The system for passivating a surface of a semiconductor may include a reactor, a metal containing precursor source fluidly coupled to the reactor, and a chalcogenide containing precursor source fluidly couple to the reactor, wherein the metal containing precursor source provides a gas-phase metal containing precursor to a reaction chamber of the reactor, and wherein the chalcogenide containing precursor source provides a gas-phase chalcogenide containing precursor to a reaction chamber of the reactor.

公开(公告)号：US09384987B2

公开(公告)日：2016-07-05

申请号：US14571126

申请日：2014-12-15

Applicant: ASM IP Holding B.V.

Inventor： Sung-Hoon Jung

IPC: H01L21/316 ,  H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/28229 ,  C23C16/405 ,  C23C16/409 ,  C23C16/45527 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02362 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

Abstract: Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer.

公开(公告)号：US20150017319A1

公开(公告)日：2015-01-15

申请号：US13941134

申请日：2013-07-12

Applicant: ASM IP Holding B.V.

Inventor： Sung-Hoon Jung ,  Petri Raisanen ,  Eric Jen Cheng Liu ,  Mike Schmotzer

IPC: C23C16/44

CPC classification number: C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45544

Abstract: Systems and methods of reducing outgassing of a substance within a reaction chamber of a reactor are disclosed. Exemplary methods include depositing a barrier layer within the reaction chamber and using a scavenging precursor to react with species on a surface of the reaction chamber. Exemplary systems include gas-phase deposition systems, such as atomic layer deposition systems, which include a barrier layer source and/or a scavenging precursor source fluidly coupled to a reaction chamber of the system.

公开(公告)号：US20250037995A1

公开(公告)日：2025-01-30

申请号：US18914767

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US12154785B2

公开(公告)日：2024-11-26

申请号：US17814161

申请日：2022-07-21

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US10410943B2

公开(公告)日：2019-09-10

申请号：US15673278

申请日：2017-08-09

Applicant: ASM IP Holding B.V.

Inventor： Xiaoqiang Jiang ,  Fu Tang ,  Qi Xie ,  Pauline Calka ,  Sung-Hoon Jung ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L23/31 ,  H01L23/29 ,  C23C16/455 ,  H01L21/67 ,  C23C16/30 ,  H01L21/306 ,  H01L29/66

Abstract: A system and a method for passivating a surface of a semiconductor. The method includes providing the surface of the semiconductor to a reaction chamber of a reactor, exposing the surface of the semiconductor to a gas-phase metal containing precursor in the reaction chamber and exposing the surface of the semiconductor to a gas-phase chalcogenide containing precursor. The methods also include passivating the surface of the semiconductor using the gas-phase metal containing precursor and the gas-phase chalcogenide containing precursor to form a passivated surface. The system for passivating a surface of a semiconductor may include a reactor, a metal containing precursor source fluidly coupled to the reactor, and a chalcogenide containing precursor source fluidly couple to the reactor, wherein the metal containing precursor source provides a gas-phase metal containing precursor to a reaction chamber of the reactor, and wherein the chalcogenide containing precursor source provides a gas-phase chalcogenide containing precursor to a reaction chamber of the reactor.