公开(公告)号：US10367080B2

公开(公告)日：2019-07-30

申请号：US15144506

申请日：2016-05-02

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Qi Xie ,  Jan Willem Maes ,  Xiaoqiang Jiang ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/66

Abstract: A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.

公开(公告)号：US20160358835A1

公开(公告)日：2016-12-08

申请号：US15169430

申请日：2016-05-31

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Fu Tang ,  Michael Givens ,  Petri Raisanen ,  Jan Willem Maes ,  Xiaoqiang Jiang

IPC: H01L23/31 ,  H01L29/161 ,  H01L29/51 ,  C23C16/52 ,  H01L21/02 ,  C23C16/40 ,  C23C16/30 ,  C23C16/455 ,  H01L29/10 ,  H01L21/28

CPC classification number: H01L23/3171 ,  C23C16/0218 ,  C23C16/403 ,  C23C16/405 ,  H01L21/02112 ,  H01L21/0228 ,  H01L21/02299 ,  H01L21/02304 ,  H01L21/28255 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/1054 ,  H01L29/16 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

Abstract translation: 在一些实施方案中，可以通过氮化，优选使用肼，肼衍生物或其组合来有效地钝化半导体表面。 该表面可以是晶体管沟道区的半导体表面。 在一些实施方案中，将天然氧化物从半导体表面上除去，随后将表面氮化。 在一些其它实施例中，在半导体表面形成半导体表面氧化物层，并且通过在表面形成半导体氮氧化物层来实现钝化，其中氮化对表面氧化物产生氮以形成氧氮化物层。 半导体氧化物层可以通过原子层沉积（ALD）沉积，并且氮化也可以作为ALD的一部分进行。

公开(公告)号：US20180108587A1

公开(公告)日：2018-04-19

申请号：US15673278

申请日：2017-08-09

Applicant: ASM IP Holding B.V.

Inventor： Xiaoqiang Jiang ,  Fu Tang ,  Qi Xie ,  Pauline Calka ,  Sung-Hoon Jung ,  Michael Eugene Givens

IPC: H01L23/31 ,  H01L21/02 ,  H01L23/29 ,  C23C16/455

CPC classification number: H01L23/3171 ,  C23C16/305 ,  C23C16/45544 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02312 ,  H01L21/306 ,  H01L21/67017 ,  H01L21/67155 ,  H01L21/6719 ,  H01L23/291 ,  H01L29/66477

Abstract: A system and a method for passivating a surface of a semiconductor. The method includes providing the surface of the semiconductor to a reaction chamber of a reactor, exposing the surface of the semiconductor to a gas-phase metal containing precursor in the reaction chamber and exposing the surface of the semiconductor to a gas-phase chalcogenide containing precursor. The methods also include passivating the surface of the semiconductor using the gas-phase metal containing precursor and the gas-phase chalcogenide containing precursor to form a passivated surface. The system for passivating a surface of a semiconductor may include a reactor, a metal containing precursor source fluidly coupled to the reactor, and a chalcogenide containing precursor source fluidly couple to the reactor, wherein the metal containing precursor source provides a gas-phase metal containing precursor to a reaction chamber of the reactor, and wherein the chalcogenide containing precursor source provides a gas-phase chalcogenide containing precursor to a reaction chamber of the reactor.

公开(公告)号：US11101370B2

公开(公告)日：2021-08-24

申请号：US16453249

申请日：2019-06-26

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Qi Xie ,  Jan Willem Maes ,  Xiaoqiang Jiang ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/66

Abstract: A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.

公开(公告)号：US09911676B2

公开(公告)日：2018-03-06

申请号：US15397237

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Xiaoqiang Jiang ,  Petri Raisanen ,  Pauline Calka

IPC: H01L21/02 ,  H01L23/31 ,  H01L23/29 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L23/3171 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/305 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/306 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L28/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.

公开(公告)号：US10410943B2

公开(公告)日：2019-09-10

申请号：US15673278

申请日：2017-08-09

Applicant: ASM IP Holding B.V.

Inventor： Xiaoqiang Jiang ,  Fu Tang ,  Qi Xie ,  Pauline Calka ,  Sung-Hoon Jung ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L23/31 ,  H01L23/29 ,  C23C16/455 ,  H01L21/67 ,  C23C16/30 ,  H01L21/306 ,  H01L29/66

Abstract: A system and a method for passivating a surface of a semiconductor. The method includes providing the surface of the semiconductor to a reaction chamber of a reactor, exposing the surface of the semiconductor to a gas-phase metal containing precursor in the reaction chamber and exposing the surface of the semiconductor to a gas-phase chalcogenide containing precursor. The methods also include passivating the surface of the semiconductor using the gas-phase metal containing precursor and the gas-phase chalcogenide containing precursor to form a passivated surface. The system for passivating a surface of a semiconductor may include a reactor, a metal containing precursor source fluidly coupled to the reactor, and a chalcogenide containing precursor source fluidly couple to the reactor, wherein the metal containing precursor source provides a gas-phase metal containing precursor to a reaction chamber of the reactor, and wherein the chalcogenide containing precursor source provides a gas-phase chalcogenide containing precursor to a reaction chamber of the reactor.

公开(公告)号：US20170110313A1

公开(公告)日：2017-04-20

申请号：US15286503

申请日：2016-10-05

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Xiaoqiang Jiang ,  Qi Xie ,  Michael Eugene Givens ,  Jan Willem Maes ,  Jerry Chen

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/20 ,  H01L29/51 ,  C23C16/455 ,  H01L29/16

CPC classification number: H01L21/0228 ,  C23C16/401 ,  C23C16/45529 ,  C23C16/45544 ,  H01L21/02156 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28194 ,  H01L29/16 ,  H01L29/20 ,  H01L29/517 ,  H01L29/78

Abstract: A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

公开(公告)号：US20170317194A1

公开(公告)日：2017-11-02

申请号：US15144506

申请日：2016-05-02

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Qi Xie ,  Jan Willem Maes ,  Xiaoqiang Jiang ,  Michael Eugene Givens

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66833 ,  H01L21/02112 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/28282

Abstract: A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.

公开(公告)号：US20170117202A1

公开(公告)日：2017-04-27

申请号：US15397237

申请日：2017-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Michael E. Givens ,  Qi Xie ,  Xiaoqiang Jiang ,  Petri Raisanen ,  Pauline Calka

IPC: H01L23/31 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L23/29

CPC classification number: H01L23/3171 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/305 ,  C23C16/40 ,  C23C16/45544 ,  H01L21/02178 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/306 ,  H01L23/29 ,  H01L23/291 ,  H01L23/293 ,  H01L28/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Improved methods and systems for passivating a surface of a high-mobility semiconductor and structures and devices formed using the methods are disclosed. The method includes providing a high-mobility semiconductor surface to a chamber of a reactor and exposing the high-mobility semiconductor surface to a gas-phase chalcogen precursor to passivate the high-mobility semiconductor surface.