公开(公告)号：US20240234205A9

公开(公告)日：2024-07-11

申请号：US18381232

申请日：2023-10-18

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Holger Saare ,  Salvatore Luiso ,  Jaebeom Lee

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/28568

Abstract: Methods for filling a recessed feature on a substrate are disclosure. The methods may include, providing a substrate with a recessed feature including a metal liner layer, partially etching the metal liner, and subsequently filing the recessed feature with a gap-fill material employing a combination of etch and cyclical deposition processes. Semiconductor structures including a gap fill metal film disposed in a recessed featured are also disclosed.

公开(公告)号：US20240191352A1

公开(公告)日：2024-06-13

申请号：US18530321

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler ,  Jacqueline Wrench ,  Paul Ma ,  Todd Robert Dunn ,  Jonathan Bakke ,  Eric James Shero ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455

CPC classification number: C23C16/4485 ,  C23C16/45561

Abstract: Various embodiments of the present technology may provide a first vessel to contain a slurry of a solid precursor powder and an inert liquid, a second vessel to receive the slurry, evaporate the inert liquid, and sublimate the solid precursor powder a first time to form a vapor, a third vessel to recondense the vapor back into a solid state and sublimate the solid precursor a second time to form a vapor, and a reaction chamber to receive the vapor from the third vessel.

公开(公告)号：US20230160057A1

公开(公告)日：2023-05-25

申请号：US17989760

申请日：2022-11-18

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: C23C16/14 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/768

CPC classification number: C23C16/14 ,  H01L21/32051 ,  H01L21/67103 ,  H01L21/76837

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

公开(公告)号：US20240425987A1

公开(公告)日：2024-12-26

申请号：US18746191

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Qi Qi ,  Rajmohan Muthaiah ,  Shubham Garg ,  Jaebeom Lee ,  YoungChol Byun ,  Daniel Maurice ,  Nirmal Gokuldas Waykole ,  Jiyeon Kim ,  Jacqueline Wrench ,  Neelam Sheoran ,  Guannan Chen

IPC: C23C16/455

Abstract: Various embodiments of the present technology may provide a showerhead assembly that includes a showerhead plate having a plurality of through-holes. Each through-hole has a conical-shaped inlet and a conical-shaped outlet. The showerhead plate may include through-holes in a center region having first dimensions and through-holes in an outer region having second dimensions that are different from the first dimensions.

公开(公告)号：US20240213027A1

公开(公告)日：2024-06-27

申请号：US18545183

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Holger Saare ,  Sukanya Datta

IPC: H01L21/285 ,  H01J37/32

CPC classification number: H01L21/28568 ,  H01J37/32522 ,  C23C16/06 ,  H01J2237/2001 ,  H01J2237/332

Abstract: Methods and systems of depositing molybdenum are disclosed. Exemplary methods include using a plasma-assisted deposition process to non-selectively and/or conformally form plasma-deposited molybdenum on a first material and on a second material.

公开(公告)号：US11742198B2

公开(公告)日：2023-08-29

申请号：US16802920

申请日：2020-02-27

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: C23C16/36 ,  C23C16/455 ,  H01L21/02 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/36 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/76829

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20200286725A1

公开(公告)日：2020-09-10

申请号：US16800114

申请日：2020-02-25

Applicant: ASM IP Holding B.V.

Inventor： Bed Prasad Sharma ,  Shankar Swaminathan ,  YoungChol Byun ,  Eric James Shero

IPC: H01L21/02 ,  C23C28/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/36

Abstract: A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.

公开(公告)号：US12293911B2

公开(公告)日：2025-05-06

申请号：US18225366

申请日：2023-07-24

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Bed Prasad Sharma ,  Shankar Swaminathan ,  Eric James Shero

IPC: C23C16/455 ,  C23C16/36 ,  H01L21/02 ,  H01L21/768

Abstract: A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

公开(公告)号：US20240218506A1

公开(公告)日：2024-07-04

申请号：US18395801

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Jonathan Bakke ,  Arjav Prafulkumar Vashi ,  Todd Robert Dunn ,  Paul Ma ,  Jacqueline Wrench ,  Jereld Lee Winkler ,  Shuaidi Zhang ,  Shubham Garg ,  YoungChol Byun

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/52

Abstract: The substrate processing system includes a delivery vessel having a first inner volume, disposed in a first location on a substrate processing platform, a remote refill vessel in fluid communication with the delivery vessel via a chemical delivery line, the remote refill vessel comprising a second inner volume greater than the first inner volume and disposed in a second location remote from the substrate processing platform, and a first heating device or a first pressurizing device, or a combination thereof, proximate the remote refill vessel, operable to heat or pressurize, or a combination thereof, a chemical disposed in the remote refill vessel sufficient to change a phase of the chemical from a first phase to a second phase.

公开(公告)号：US20240136224A1

公开(公告)日：2024-04-25

申请号：US18381232

申请日：2023-10-17

Applicant: ASM IP Holding B.V.

Inventor： YoungChol Byun ,  Holger Saare ,  Salvatore Luiso ,  Jaebeom Lee

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/28568

Abstract: Methods for filling a recessed feature on a substrate are disclosure. The methods may include, providing a substrate with a recessed feature including a metal liner layer, partially etching the metal liner, and subsequently filing the recessed feature with a gap-fill material employing a combination of etch and cyclical deposition processes. Semiconductor structures including a gap fill metal film disposed in a recessed featured are also disclosed.