公开(公告)号：US20180033616A1

公开(公告)日：2018-02-01

申请号：US15222780

申请日：2016-07-28

Applicant: ASM IP Holding B.V.

Inventor： Zaitsu Masaru ,  Atsuki Fukazawa

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762 ,  C23C16/50

CPC classification number: H01L21/02274 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/30 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/76224

Abstract: According to the invention a method for filling one or more gaps created during manufacturing of a feature on a substrate is provided by providing the substrate in a reaction chamber and providing a deposition method. The deposition method comprises; providing an anisotropic plasma to bombard a bottom area of a surface of the one or more gaps with ions thereby creating adsorption sites at the bottom area; introducing a first reactant to the substrate; and, allowing the first reactant to react with the adsorption sites at the bottom area of the surface to fill the one or more gaps from the bottom area upwards.

公开(公告)号：US10395919B2

公开(公告)日：2019-08-27

申请号：US15222780

申请日：2016-07-28

Applicant: ASM IP Holding B.V.

Inventor： Zaitsu Masaru ,  Atsuki Fukazawa

IPC: C23C16/02 ,  C23C16/50 ,  H01L21/02 ,  C23C16/455 ,  H01L21/762 ,  C23C16/04 ,  C23C16/30

Abstract: According to the invention a method for filling one or more gaps created during manufacturing of a feature on a substrate is provided by providing the substrate in a reaction chamber and providing a deposition method. The deposition method comprises; providing an anisotropic plasma to bombard a bottom area of a surface of the one or more gaps with ions thereby creating adsorption sites at the bottom area; introducing a first reactant to the substrate; and, allowing the first reactant to react with the adsorption sites at the bottom area of the surface to fill the one or more gaps from the bottom area upwards.