公开(公告)号：US11776885B2

公开(公告)日：2023-10-03

申请号：US17397842

申请日：2021-08-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Lin Ho ,  Chih-Cheng Lee

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L21/4857 ,  H01L23/3157 ,  H01L23/49816 ,  H01L23/49822

Abstract: A substrate includes a first dielectric layer having a first surface and a second dielectric layer having a first surface disposed adjacent to the first surface of the first dielectric layer. The substrate further includes a first conductive via disposed in the first dielectric layer and having a first end adjacent to the first surface of the first dielectric layer and a second end opposite the first end. The substrate further includes a second conductive via disposed in the second dielectric layer and having a first end adjacent to the first surface of the second dielectric layer. A width of the first end of the first conductive via is smaller than a width of the second end of the first conductive via, and a width of the first end of the second conductive via is smaller than the width of the first end of the first conductive via.

公开(公告)号：US11721678B2

公开(公告)日：2023-08-08

申请号：US17330240

申请日：2021-05-25

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chien-Mei Huang ,  Shih-Yu Wang ,  I-Ting Lin ,  Wen Hung Huang ,  Yuh-Shan Su ,  Chih-Cheng Lee ,  Hsing Kuo Tien

IPC: H01L25/16 ,  H01L23/31 ,  H01L23/00 ,  H01L23/522 ,  H01L21/56 ,  H01L23/528 ,  H01L23/29

CPC classification number: H01L25/16 ,  H01L21/563 ,  H01L23/315 ,  H01L23/3128 ,  H01L23/3171 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/17 ,  H01L23/293 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401

Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.

公开(公告)号：US11469186B2

公开(公告)日：2022-10-11

申请号：US16938818

申请日：2020-07-24

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsing Kuo Tien ,  Chih-Cheng Lee

IPC: H01L23/00 ,  H01L25/16 ,  H01L21/48 ,  H01L23/538

Abstract: A semiconductor device package and method for manufacturing the same are provided. The semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, and a first circuit layer disposed on the substrate. The first circuit layer includes a conductive wiring pattern, and the conductive wiring pattern is an uppermost conductive pattern of the first circuit layer. The stress buffering structure is disposed on the first conductive structure. The second conductive structure is disposed over the stress buffering structure. The conductive wiring pattern extends through the stress buffering structure and electrically connected to the second conductive structure, and an upper surface of the conductive wiring pattern is substantially coplanar with an upper surface of the stress buffering structure.

公开(公告)号：US09812387B2

公开(公告)日：2017-11-07

申请号：US15364143

申请日：2016-11-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Li-Chuan Tsai ,  Chih-Cheng Lee

IPC: H05K1/11 ,  H05K1/03 ,  H05K1/16 ,  H05K7/00 ,  H05K1/18 ,  H01L23/498 ,  H05K1/02 ,  H05K3/36 ,  H05K3/00 ,  H05K3/22 ,  H05K3/40 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/17 ,  H01L2224/16227 ,  H01L2924/15153 ,  H01L2924/15313 ,  H01L2924/19105 ,  H05K1/0266 ,  H05K1/0298 ,  H05K1/111 ,  H05K1/115 ,  H05K1/181 ,  H05K1/183 ,  H05K3/0017 ,  H05K3/0026 ,  H05K3/0047 ,  H05K3/22 ,  H05K3/36 ,  H05K3/40 ,  H05K3/4682 ,  H05K3/4697 ,  H05K2201/0158 ,  H05K2201/09472 ,  H05K2201/09527 ,  H05K2201/10204 ,  H05K2203/166 ,  Y02P70/611

Abstract: A semiconductor substrate includes: 1) a first dielectric structure having a first surface and a second surface opposite the first surface; 2) a second dielectric structure having a third surface and a fourth surface opposite the third surface, wherein the fourth surface faces the first surface, the second dielectric structure defining a through hole extending from the third surface to the fourth surface, wherein a cavity is defined by the through hole and the first dielectric structure; 3) a first patterned conductive layer, disposed on the first surface of the first dielectric structure; and 4) a second patterned conductive layer, disposed on the second surface of the first dielectric structure and including at least one conductive trace. The first dielectric structure defines at least one opening to expose a portion of the second patterned conductive layer.

公开(公告)号：US09426891B2

公开(公告)日：2016-08-23

申请号：US14550615

申请日：2014-11-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Li-Chuan Tsai ,  Chih-Cheng Lee

IPC: H01L23/52 ,  H05K1/18 ,  H01L21/48 ,  H01L23/498 ,  H05K3/34 ,  H05K3/00

CPC classification number: H05K1/186 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L2924/0002 ,  H05K3/007 ,  H05K3/34 ,  H05K2203/06 ,  H01L2924/00

Abstract: The present disclosure relates to a semiconductor device substrate and a method for making the same. The semiconductor device substrate includes a first dielectric layer, a second dielectric layer and an electronic component. The first dielectric layer includes a body portion, and a wall portion protruded from a first surface of the body portion. The wall portion has an end. The second dielectric layer has a first surface and an opposing second surface. The first surface of the second dielectric layer is adjacent to the first surface of the body portion. The second dielectric layer surrounds the wall portion. The end of the wall portion extends beyond the second surface of the second dielectric layer. The electronic component includes a first electrical contact and a second electrical contact. At least a part of the electronic component is surrounded by the wall portion.

Abstract translation: 本公开涉及一种半导体器件基板及其制造方法。 半导体器件基板包括第一介电层，第二介电层和电子部件。 第一电介质层包括主体部分和从主体部分的第一表面突出的壁部分。 壁部分有一端。 第二电介质层具有第一表面和相对的第二表面。 第二电介质层的第一表面与主体部分的第一表面相邻。 第二电介质层围绕壁部。 壁部分的端部延伸超过第二介电层的第二表面。 电子部件包括第一电接触和第二电接触。 电子部件的至少一部分被壁部包围。

公开(公告)号：US09373601B2

公开(公告)日：2016-06-21

申请号：US14700060

申请日：2015-04-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Chih-Cheng Lee ,  Yuan Chang Su ,  Cheng-Lin Ho ,  Chung-Ming Wu ,  You-Lung Yen

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/768 ,  H01L21/683 ,  H01L21/56 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/76801 ,  H01L21/76877 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11334 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16113 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/81801 ,  H01L2924/014 ,  H01L2924/00014

Abstract: The present disclosure relates to a semiconductor substrate, a semiconductor package structure, and methods for making the same. A method includes providing a substrate and a carrier layer. The substrate includes a first patterned metal layer, a second patterned metal layer spaced from the first patterned metal layer, and a dielectric layer disposed between the first patterned metal layer and the second patterned metal layer. The dielectric layer covers the second patterned metal layer. The dielectric layer defines first openings exposing the second patterned metal layer, and further defines a via opening extending from the first patterned metal layer to the second patterned metal layer. A conductive material is disposed in the via and electrically connects the first patterned metal layer to the second patterned metal layer. The carrier layer defines second openings exposing the second patterned metal layer.

Abstract translation: 本公开涉及半导体衬底，半导体封装结构及其制造方法。 一种方法包括提供衬底和载体层。 衬底包括第一图案化金属层，与第一图案化金属层间隔开的第二图案化金属层，以及设置在第一图案化金属层和第二图案化金属层之间的介电层。 电介质层覆盖第二图案化金属层。 电介质层限定暴露第二图案化金属层的第一开口，并且还限定从第一图案化金属层延伸到第二图案化金属层的通孔。 导电材料设置在通孔中并将第一图案化金属层电连接到第二图案化金属层。 载体层限定暴露第二图案化金属层的第二开口。

公开(公告)号：US11432406B2

公开(公告)日：2022-08-30

申请号：US17025939

申请日：2020-09-18

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Wu Chou Hsu ,  Hsing Kuo Tien ,  Chih-Cheng Lee ,  Min-Yao Chen

IPC: H02K5/04 ,  H02K33/00 ,  H05K3/30 ,  H01L21/00 ,  H01L21/56 ,  H01L23/10 ,  H01L23/498 ,  H01L23/544 ,  H05K1/18 ,  H05K1/02 ,  H01L21/48

Abstract: A package substrate and manufacturing method thereof are provided. The package substrate includes a substrate and an electronic component. The substrate includes a cavity. The electronic component is disposed in the cavity. The electronic component includes a first region and a second region, and an optical recognition rate of the first region is distinct from that of the second region.

公开(公告)号：US11201386B2

公开(公告)日：2021-12-14

申请号：US16670487

申请日：2019-10-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Lin Ho ,  Chih-Cheng Lee ,  Chun Chen Chen ,  Yuanhao Yu

IPC: H01L23/495 ,  H01L21/786 ,  H01Q1/22 ,  H01L23/28 ,  H01L21/768 ,  H01L23/66

Abstract: A semiconductor device package and a method for manufacturing the same are provided. The semiconductor device package includes a circuit layer and an antenna module. The circuit layer has a first surface, a second surface opposite to the first surface and a lateral surface. The lateral surface extends between the first surface and the second surface. The circuit layer has an interconnection structure. The antenna module has an antenna pattern layer and is disposed on the first surface of the circuit layer. The lateral surface of the circuit layer is substantially coplanar with a lateral surface of the antenna module.

公开(公告)号：US11024555B2

公开(公告)日：2021-06-01

申请号：US16878475

申请日：2020-05-19

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Cheng-Lin Ho ,  Chih-Cheng Lee

IPC: H01L21/768 ,  H01L23/00 ,  H01L23/367 ,  H01L23/373

Abstract: The present disclosure provides a semiconductor substrate, including a first patterned conductive layer, a dielectric structure on the first patterned conductive layer, wherein the dielectric structure having a side surface, a second patterned conductive layer on the dielectric structure and extending on the side surface, and a third patterned conductive layer on the second patterned conductive layer and extending on the side surface. The present disclosure provides a semiconductor package including the semiconductor substrate. A method for manufacturing the semiconductor substrate and the semiconductor package is also provided.

公开(公告)号：US09984898B2

公开(公告)日：2018-05-29

申请号：US15630847

申请日：2017-06-22

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Li Chuan Tsai ,  Chih-Cheng Lee ,  Cheng-Lin Ho

IPC: H01L21/48 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L21/4857 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/498 ,  H01L24/16

Abstract: A substrate includes a dielectric layer having a first surface and a second surface opposite to the first surface, a first circuit layer and at least one second conductive element. The first circuit layer is disposed adjacent to the first surface of the dielectric layer, and includes at least one trace and at least one first conductive element connected to the trace. The first conductive element does not extend through the dielectric layer. The second conductive element extends through the dielectric layer. An area of an upper surface of the second conductive element is substantially equal to an area of an upper surface of the first conductive element.