中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

15 records (took 0.013 seconds)

    Process for buried localized oxidation of a silicon substrate and corresponding integrated circuit
    1.
    发明授权
    Process for buried localized oxidation of a silicon substrate and corresponding integrated circuit 失效
    硅基板和对应集成电路的局部化氧化处理工艺

    公开(公告)号：US5229318A

    公开(公告)日：1993-07-20

    申请号：US832078

    申请日：1992-02-06

    Applicant: Alain Straboni ,  Kathy Barla ,  Bernard Vuillermoz

    Inventor： Alain Straboni ,  Kathy Barla ,  Bernard Vuillermoz

    IPC: H01L21/76 ,  H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/762

    CPC classification number: H01L21/76221 ,  H01L21/3185 ,  H01L21/32 ,  Y10S148/05

    Abstract: The invention relates to a process for buried localized oxidation of a silicon substrate. The process consists in performing a) a sealing on the surface of the substrate (S), by a first nitriding, by growing a later of silicon nitride forming at least one surface layer, then in performing b) the etching (G1) of a trench (T) intended to receive the buried localized oxidation. A second nitriding is performed c) on the free area of the trench (T) in order to obtain a sealing sc of the walls of the trench (T). An etching (G2) is performed at d) on the bottom wall of the trench (T) by at least partial etching of the silicon nitride layer obtained by second nitriding in order to uncover the substrate material (S). A localized oxidation e) is performed to produce the buried oxidation (OE) of the substrate in the trench. Application to the production of integrated circuits.

    Abstract translation: 本发明涉及一种用于硅衬底的局部氧化掩埋的方法。 该方法包括以下步骤：通过第一次氮化，在形成至少一个表面层的氮化硅后期生长，然后在进行b）（a）的蚀刻（G1）中进行a）在基板表面上的密封 沟槽（T）用于接收埋藏的局部氧化。 在沟槽（T）的自由区域上进行第二次氮化，以获得沟槽（T）的壁的密封sc。 在d）在沟槽（T）的底壁上进行蚀刻（G2），至少部分蚀刻通过第二次氮化获得的氮化硅层，以露出衬底材料（S）。 进行局部氧化e）以在沟槽中产生衬底的掩埋氧化（OE）。 应用于集成电路的生产。

    Semiconductor structure
    4.
    发明授权
    Semiconductor structure 有权
    半导体结构

    公开(公告)号：US08405183B2

    公开(公告)日：2013-03-26

    申请号：US12760086

    申请日：2010-04-14

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: H01L31/102

    CPC classification number: H01L31/1804 ,  H01L31/02168 ,  H01L31/035263 ,  H01L31/03682 ,  H01L31/04 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: An electronic structure includes a first area having silicon grains having a size smaller than 100 micrometers and a second area superposed to the first area and having silicon grains having a size greater than or equal to 100 micrometers. The first and second areas form a support. At least one layer of an epitaxial semiconductor material is disposed on the second area.

    Abstract translation: 电子结构包括具有尺寸小于100微米的硅晶粒的第一区域和与第一区域重叠并且具有大于或等于100微米尺寸的硅晶粒的第二区域。 第一和第二区域形成支持。 至少一层外延半导体材料设置在第二区域上。

    SEMICONDUCTOR STRUCTURE
    5.
    发明申请
    SEMICONDUCTOR STRUCTURE 有权
    半导体结构

    公开(公告)号：US20100258172A1

    公开(公告)日：2010-10-14

    申请号：US12760086

    申请日：2010-04-14

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: H01L31/0288 ,  H01L31/0256

    CPC classification number: H01L31/1804 ,  H01L31/02168 ,  H01L31/035263 ,  H01L31/03682 ,  H01L31/04 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: An electronic structure includes a first area having silicon grains having a size smaller than 100 micrometers and a second area superposed to the first area and having silicon grains having a size greater than or equal to 100 micrometers. The first and second areas form a support. At least one layer of an epitaxial semiconductor material is disposed on the second area.

    Abstract translation: 电子结构包括具有尺寸小于100微米的硅晶粒的第一区域和与第一区域重叠并且具有大于或等于100微米尺寸的硅晶粒的第二区域。 第一和第二区域形成支持。 至少一层外延半导体材料设置在第二区域上。

    Method for forming a sintered semiconductor material
    6.
    发明授权
    Method for forming a sintered semiconductor material 有权
    形成烧结半导体材料的方法

    公开(公告)号：US08192648B2

    公开(公告)日：2012-06-05

    申请号：US12184703

    申请日：2008-08-01

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: H01B1/00

    CPC classification number: H01L31/1804 ,  H01L31/03529 ,  H01L31/04 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of forming a material from a source material including the following steps of grinding the source material to get powders if the source material is not already in the form of powders; sintering the powders with at least one compression step and one thermal processing step; and purifying the material with a gas flow, the gas flow passing through the porosity channels of the material.

    Abstract translation: 一种从源材料形成材料的方法，包括以下步骤：如果源材料不是粉末形式，则研磨源材料以得到粉末; 用至少一个压缩步骤和一个热处理步骤烧结粉末; 并用气流净化材料，气流通过材料的孔隙率通道。

    Sintered semiconductor material
    7.
    发明授权
    Sintered semiconductor material 有权
    烧结半导体材料

    公开(公告)号：US08105923B2

    公开(公告)日：2012-01-31

    申请号：US10552548

    申请日：2004-04-09

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: H01L21/04

    CPC classification number: H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.

    Abstract translation: 本发明涉及通过烧结粉末和半导体材料形成半导体材料的方法。 该方法包括压缩和热处理阶段，使得一部分粉末熔化或变得粘稠。 该材料可用于光伏领域。

    Method for the production of semiconductor granules
    8.
    发明授权
    Method for the production of semiconductor granules 有权
    半导体颗粒的生产方法

    公开(公告)号：US07563404B2

    公开(公告)日：2009-07-21

    申请号：US10553049

    申请日：2004-04-09

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: B28B3/02

    CPC classification number: B01J2/22 ,  B22F3/12 ,  C30B11/00 ,  C30B15/00 ,  C30B29/06

    Abstract: The invention relates to a method for the production of semiconductor granules comprising a step in which semiconductor powders are sintered and/or melted. The powders are nanometric and/or micrometric sized.

    Abstract translation: 本发明涉及一种生产半导体颗粒的方法，包括半导体粉末烧结和/或熔化的步骤。 粉末是纳米尺寸和/或微米尺寸的。

    METHOD FOR THE PRODUCTION OF SEMICONDUCTOR GRANULES
    9.
    发明申请
    METHOD FOR THE PRODUCTION OF SEMICONDUCTOR GRANULES 审中-公开
    半导体晶粒生产方法

    公开(公告)号：US20090028740A1

    公开(公告)日：2009-01-29

    申请号：US12184696

    申请日：2008-08-01

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: B22F5/10 ,  B08B3/08 ,  B08B5/00

    CPC classification number: B01J2/22 ,  B22F3/12 ,  B22F2998/10 ,  B22F2999/00 ,  C30B11/00 ,  C30B15/00 ,  C30B29/06 ,  B22F3/02 ,  B22F3/15 ,  B22F3/24 ,  B22F2201/013 ,  B22F2201/00

    Abstract: A method of manufacturing a semiconductor material in the form of bricks or granules, includes a step of sintering powders of at least one material selected from the group consisting of silicon, germanium, gallium arsenide, and the alloys thereof so as to form said granules. The sintering step includes the steps of compacting and thermal processing the powders, and a step of purifying the semiconductor material using a flow of a gas. The gas flow passes through the porosity channels of the material.

    Abstract translation: 制造砖或颗粒形式的半导体材料的方法包括烧结选自硅，锗，砷化镓及其合金中的至少一种材料的粉末以形成所述颗粒的步骤。 烧结步骤包括压粉和热处理粉末的步骤，以及使用气流净化半导体材料的步骤。 气流通过材料的孔隙度通道。

Patent Agency Ranking