公开(公告)号：US20170309554A1

公开(公告)日：2017-10-26

申请号：US15134330

申请日：2016-04-20

Applicant: Amkor Technology, Inc.

Inventor： Marc Alan Mangrum ,  Thinh Van Pham

IPC: H01L23/495 ,  H01L21/48 ,  H01L27/092

CPC classification number: H01L23/49562 ,  H01L21/4825 ,  H01L21/4828 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L24/73 ,  H01L27/0922 ,  H01L2224/05553 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A method of forming a packaged semiconductor device includes providing a conductive frame structure. The conductive frame structure includes a first frame having leadfingers configured for directly attaching to a semiconductor device, such as an integrated power semiconductor device that includes both power devices and logic type devices. The leadfingers are further configured to provide high current capacity and a high thermal dissipation capacity for the power device portion of the semiconductor device. In one embodiment, the conductive frame structure further includes a second frame joined to the first frame. The second frame includes a plurality of leads configured to electrically connect to low power device portions of the semiconductor device. A package body is formed to encapsulate the semiconductor device and at least portions of the leadfingers and leads.

公开(公告)号：US09917039B2

公开(公告)日：2018-03-13

申请号：US15134330

申请日：2016-04-20

Applicant: Amkor Technology Inc.

Inventor： Marc Alan Mangrum ,  Thinh Van Pham

IPC: H01L21/00 ,  H01L23/495 ,  H01L21/48 ,  H01L27/092

CPC classification number: H01L23/49562 ,  H01L21/4825 ,  H01L21/4828 ,  H01L23/4952 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L24/73 ,  H01L27/0922 ,  H01L2224/05553 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A method of forming a packaged semiconductor device includes providing a conductive frame structure. The conductive frame structure includes a first frame having leadfingers configured for directly attaching to a semiconductor device, such as an integrated power semiconductor device that includes both power devices and logic type devices. The leadfingers are further configured to provide high current capacity and a high thermal dissipation capacity for the power device portion of the semiconductor device. In one embodiment, the conductive frame structure further includes a second frame joined to the first frame. The second frame includes a plurality of leads configured to electrically connect to low power device portions of the semiconductor device. A package body is formed to encapsulate the semiconductor device and at least portions of the leadfingers and leads.