公开(公告)号：US20170271320A1

公开(公告)日：2017-09-21

申请号：US15614048

申请日：2017-06-05

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Jonathan Pfeifer

IPC: H01L27/02

CPC classification number: H01L27/0259 ,  H01L27/0207 ,  H01L27/0262

Abstract: The disclosed technology relates to electronics, and more particularly, to protection devices that protect circuits from transient electrical events such as electrical overstress/electrostatic discharge. A protection device includes a semiconductor substrate having formed therein at least two wells and a deep well underlying and contacting the at least two wells. The device additionally includes a first PN diode formed in one of the at least two wells and having a first heavily doped region of a first conductivity type and a first heavily doped region of a second conductivity type, and includes a second PN diode formed in one of the at least two wells and having a second heavily doped region of the first conductivity type and a second heavily doped region of the second conductivity type. The device additionally includes a first PN diode and the second PN diode are electrically shorted by an electrical shorting structure to form a first plurality of serially connected diodes having a threshold voltage. The device further includes a PNPN silicon-controlled rectifier (SCR) having a trigger voltage and comprising the first heavily doped region of the first conductivity type, the at least two wells, the deep well, and the second heavily doped region of the second conductivity type.

公开(公告)号：US10008490B2

公开(公告)日：2018-06-26

申请号：US15614048

申请日：2017-06-05

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Jonathan Pfeifer

IPC: H01L27/02

CPC classification number: H01L27/0259 ,  H01L27/0207 ,  H01L27/0262

Abstract: The disclosed technology relates to electronics, and more particularly, to protection devices that protect circuits from transient electrical events such as electrical overstress/electrostatic discharge. A protection device includes a semiconductor substrate having formed therein at least two wells and a deep well underlying and contacting the at least two wells. The device additionally includes a first PN diode formed in one of the at least two wells and having a first heavily doped region of a first conductivity type and a first heavily doped region of a second conductivity type, and includes a second PN diode formed in one of the at least two wells and having a second heavily doped region of the first conductivity type and a second heavily doped region of the second conductivity type. The device additionally includes a first PN diode and the second PN diode are electrically shorted by an electrical shorting structure to form a first plurality of serially connected diodes having a threshold voltage. The device further includes a PNPN silicon-controlled rectifier (SCR) having a trigger voltage and comprising the first heavily doped region of the first conductivity type, the at least two wells, the deep well, and the second heavily doped region of the second conductivity type.

公开(公告)号：US20160300830A1

公开(公告)日：2016-10-13

申请号：US14796731

申请日：2015-07-10

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Jonathan Pfeifer

IPC: H01L27/02

CPC classification number: H01L27/0259 ,  H01L27/0207 ,  H01L27/0262

Abstract: The disclosed technology relates to electronics, and more particularly, to protection devices that protect circuits from transient electrical events such as electrical overstress/electrostatic discharge. A protection device includes a semiconductor substrate having formed therein at least two wells and a deep well underlying and contacting the at least two wells. The device additionally includes a first PN diode formed in one of the at least two wells and having a first heavily doped region of a first conductivity type and a first heavily doped region of a second conductivity type, and includes a second PN diode formed in one of the at least two wells and having a second heavily doped region of the first conductivity type and a second heavily doped region of the second conductivity type. The device additionally includes a first PN diode and the second PN diode are electrically shorted by an electrical shorting structure to form a first plurality of serially connected diodes having a threshold voltage. The device further includes a PNPN silicon-controlled rectifier (SCR) having a trigger voltage and comprising the first heavily doped region of the first conductivity type, the at least two wells, the deep well, and the second heavily doped region of the second conductivity type.

Abstract translation: 所公开的技术涉及电子器件，更具体地，涉及保护电路免受例如电过载/静电放电等瞬态电气事件的保护装置。 保护装置包括其中形成有至少两个阱和深阱的半导体衬底，并且与至少两个阱接触。 该器件还包括形成在所述至少两个阱中的一个中并且具有第一导电类型的第一重掺杂区域和第二导电类型的第一重掺杂区域的第一PN二极管，并且包括形成在第一导电类型中的第二PN二极管 并且具有第一导电类型的第二重掺杂区域和第二导电类型的第二重掺杂区域。 该器件还包括第一PN二极管，并且第二PN二极管由电短路结构电短路以形成具有阈值电压的第一多个串联连接的二极管。 该装置还包括具有触发电压并包括第一导电类型的第一重掺杂区域，第二导电类型的至少两个阱，深阱和第二重掺杂区域的PNPN可硅可控整流器 类型。

公开(公告)号：US09673187B2

公开(公告)日：2017-06-06

申请号：US14796731

申请日：2015-07-10

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Jonathan Pfeifer

IPC: H01L27/02

CPC classification number: H01L27/0259 ,  H01L27/0207 ,  H01L27/0262

Abstract: The disclosed technology relates to electronics, and more particularly, to protection devices that protect circuits from transient electrical events such as electrical overstress/electrostatic discharge. A protection device includes a semiconductor substrate having formed therein at least two wells and a deep well underlying and contacting the at least two wells. The device additionally includes a first PN diode formed in one of the at least two wells and having a first heavily doped region of a first conductivity type and a first heavily doped region of a second conductivity type, and includes a second PN diode formed in one of the at least two wells and having a second heavily doped region of the first conductivity type and a second heavily doped region of the second conductivity type. The device additionally includes a first PN diode and the second PN diode are electrically shorted by an electrical shorting structure to form a first plurality of serially connected diodes having a threshold voltage. The device further includes a PNPN silicon-controlled rectifier (SCR) having a trigger voltage and comprising the first heavily doped region of the first conductivity type, the at least two wells, the deep well, and the second heavily doped region of the second conductivity type.