Selective reference voltage calibration in memory subsystem

    公开(公告)号:US11501820B2

    公开(公告)日:2022-11-15

    申请号:US17181979

    申请日:2021-02-22

    Applicant: Apple Inc.

    Abstract: A method and apparatus for selective reference voltage calibration in a memory subsystem is disclosed. A memory subsystem includes a memory coupled to a memory controller. The memory controller may operate in one of a number of different performance states. The memory controller further includes a calibration circuit configured to perform reference voltage calibrations for the various ones of the performance states to determine corresponding reference voltages. For a performance state change from an initial performance state to a final performance state, via an intermediate performance state, the memory controller is configured to transition to the intermediate performance state without causing the calibration circuit to perform a reference voltage calibration in that state. Thereafter, the memory controller transitions to the final performance state.

    FILTERING MEMORY CALIBRATION
    2.
    发明申请

    公开(公告)号:US20200285406A1

    公开(公告)日:2020-09-10

    申请号:US16293398

    申请日:2019-03-05

    Applicant: Apple Inc.

    Abstract: Systems, methods and mechanisms for efficiently calibrating memory signals. In various embodiments, a computing system includes at least one processor, a memory and a power manager. The power manager generates and sends updated power-performance states (p-states) to the processor and the memory. Logic within a memory controller for the memory initializes a first timer corresponding to a first p-state of the multiple p-states to indicate a duration for skipping memory calibration. The logic continues to update the first timer while transferring data with the memory using operating parameters of the first p-state. When the memory is not using operating parameters of the first p-state, the logic prevents updates of the first timer. When the power manager determines to transition the memory from the first p-state to a second p-state, and the second timer for the second e-state has not expired, the logic prevents calibration of the memory.

    Memory Calibration with End Point Replay
    3.
    发明申请

    公开(公告)号:US20200265881A1

    公开(公告)日:2020-08-20

    申请号:US16277804

    申请日:2019-02-15

    Applicant: Apple Inc.

    Abstract: A method and apparatus for performing memory calibration with endpoint replay is disclosed. A first calibration of a data strobe signal in a memory subsystem is performed. The first calibration includes determining initial values of first and second endpoints indicative of first and second delay values, respectively, applied to the data strobe signal. A second calibration of the data strobe signal is performed around these endpoints, within a range thereof that is less than a full range there between. Based on the second calibration, the endpoints are adjusted.

    Selective Reference Voltage Calibration in Memory Subsystem

    公开(公告)号:US20220270664A1

    公开(公告)日:2022-08-25

    申请号:US17181979

    申请日:2021-02-22

    Applicant: Apple Inc.

    Abstract: A method and apparatus for selective reference voltage calibration in a memory subsystem is disclosed. A memory subsystem includes a memory coupled to a memory controller. The memory controller may operate in one of a number of different performance states. The memory controller further includes a calibration circuit configured to perform reference voltage calibrations for the various ones of the performance states to determine corresponding reference voltages. For a performance state change from an initial performance state to a final performance state, via an intermediate performance state, the memory controller is configured to transition to the intermediate performance state without causing the calibration circuit to perform a reference voltage calibration in that state. Thereafter, the memory controller transitions to the final performance state.

    Memory subsystem calibration using substitute results

    公开(公告)号:US11217285B1

    公开(公告)日:2022-01-04

    申请号:US16986116

    申请日:2020-08-05

    Applicant: Apple Inc.

    Abstract: A memory subsystem and method for performing calibrations therein is disclosed. A memory subsystem includes a memory controller coupled to a memory by a plurality of signal paths. The memory controller is configured to perform an initial calibration to determine respective eye patterns corresponding to the ones of the plurality of signal paths. For a subsequent calibrations, updated eye patterns are determined for a subset of the plurality of signal paths. Remaining ones of the plurality of signal paths (not included in the subset), are not active during the subsequent calibrations. Updated eye patterns for the remaining ones of the plurality of signal paths are determined based on information obtained during the initial calibration and information from signal paths in the subset designated proxies for the remaining ones of the plurality of signal paths.

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