公开(公告)号：US12002703B2

公开(公告)日：2024-06-04

申请号：US17227066

申请日：2021-04-09

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Anand Kumar

IPC: H01L21/687 ,  C23C16/44 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/68742 ,  C23C16/4401 ,  H01J37/32715 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01J37/32449 ,  H01L21/67069

Abstract: Apparatuses for substrate transfer are provided. A lift pin assembly can include a lift pin, a purge cylinder, and a lift pin guide. The lift pin guide is disposed adjacent the purge cylinder. The lift pin guide and the purge cylinder have a passage formed therethrough in which the lift pin is disposed. The purge cylinder includes one or more nozzles that direct the flow of gas radially inward into a portion of the passage disposed in the purge cylinder. The one or more nozzles are disposed radially outward from the lift pin. The purge cylinder reduces particle deposition on the substrate by preventing contact between the lift pin and the support assembly as the lift pin is in motion.

公开(公告)号：US11004722B2

公开(公告)日：2021-05-11

申请号：US16010250

申请日：2018-06-15

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Anand Kumar

IPC: H01L21/677 ,  H01L21/687 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: Apparatuses for substrate transfer are provided. A lift pin assembly can include a lift pin, a purge cylinder, and a lift pin guide. The lift pin guide is disposed adjacent the purge cylinder. The lift pin guide and the purge cylinder have a passage formed therethough in which the lift pin is disposed. The purge cylinder includes one or more nozzles that direct the flow of gas radially inward into a portion of the passage disposed in the purge cylinder. The one or more nozzles are disposed radially outward from the lift pin. The purge cylinder reduces particle deposition on the substrate by preventing contact between the lift pin and the support assembly as the lift pin is in motion.

公开(公告)号：US20240304486A1

公开(公告)日：2024-09-12

申请号：US18206443

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Anand Kumar

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/68757 ,  H01J2237/334

Abstract: An electrostatic chuck (ESC) having a ceramic body including embedded electrodes and having a first diameter. Three or more regions are defined on a surface and arranged concentrically on the surface, each region includes a retaining ring arranged on the surface and defining an outer edge of the region, and supportive structures arranged on the surface and within the region. The supportive structures are configured to support a surface of a substrate when the substrate is retained by the ESC. The ESC includes conduits formed in the ceramic body and configured to independently introduce a gas into each region through the ceramic body and to the first surface. Each region is configured to retain a corresponding positive gas pressure within the region and the surface of the substrate, and the one or more embedded electrodes are configured to generate a retaining force on the surface of the substrate.

公开(公告)号：US10770269B2

公开(公告)日：2020-09-08

申请号：US15677929

申请日：2017-08-15

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Bradley Howard ,  Shahid Rauf ,  Ajit Balakrishna ,  Tom K. Choi ,  Kenneth S. Collins ,  Anand Kumar ,  Michael D. Willwerth ,  Yogananda Sarode Vishwanath

IPC: B29D22/00 ,  H01J37/32 ,  B01D45/08 ,  B32B1/02 ,  B29C65/00 ,  B32B1/08

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

公开(公告)号：US09761416B2

公开(公告)日：2017-09-12

申请号：US14200077

申请日：2014-03-07

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Bradley Howard ,  Shahid Rauf ,  Ajit Balakrishna ,  Tom K. Cho ,  Kenneth S. Collins ,  Anand Kumar ,  Michael D. Willwerth ,  Yogananda Sarode Vishwanath

IPC: B01D45/00 ,  H01J37/32 ,  B01D45/08 ,  B32B1/02 ,  B29C65/00

CPC classification number: H01J37/32495 ,  B01D45/08 ,  B29C66/71 ,  B32B1/02 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32871 ,  Y10T428/13

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

公开(公告)号：US20240387224A1

公开(公告)日：2024-11-21

申请号：US18198003

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode ,  Anand Kumar ,  Prashant V. Javali

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: A device includes a hybrid puck corresponding to an electrostatic chuck. The hybrid puck includes a backing region and a chucking region disposed on the backing region. The backing region includes a first dielectric material to improve thermal performance of the hybrid puck. The chucking region includes a second dielectric material different from the first dielectric material to improve leakage current stability.