公开(公告)号：US09548200B2

公开(公告)日：2017-01-17

申请号：US14322484

申请日：2014-07-02

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract translation: 本文描述了用于处理衬底的方法和设备。 真空多室沉积工具可以包括具有加热机构和可变频率微波源的脱气室。 本文描述的方法使用可变频率微波辐射来提高脱气过程的质量和速度，而不损害各种组分。

公开(公告)号：US11145504B2

公开(公告)日：2021-10-12

申请号：US16597466

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Zhijun Jiang ,  Ganesh Balasubramanian ,  Arkajit Roy Barman ,  Hidehiro Kojiri ,  Xinhai Han ,  Deenesh Padhi ,  Chuan Ying Wang ,  Yue Chen ,  Daemian Raj Benjamin Raj ,  Nikhil Sudhindrarao Jorapur ,  Vu Ngoc Tran Nguyen ,  Miguel S. Fung ,  Jose Angelo Olave ,  Thian Choi Lim

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  C23C16/24 ,  C23C16/40

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

公开(公告)号：US11600468B2

公开(公告)日：2023-03-07

申请号：US16748632

申请日：2020-01-21

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar Mutyala ,  Sanjay G. Kamath ,  Deenesh Padhi ,  Arkajit Roy Barman

IPC: H01J37/32 ,  H01L21/67 ,  H05B1/02 ,  C23C16/455

Abstract: Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.

公开(公告)号：US09960035B2

公开(公告)日：2018-05-01

申请号：US15399614

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Loke Yuen Wong ,  Ke Chang ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Glen T. Mori ,  Aksel Kitowski ,  Arkajit Roy Barman

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/67 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511

CPC classification number: H01L21/02345 ,  C23C14/22 ,  C23C16/46 ,  C23C16/511 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/31058 ,  H01L21/67115

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.