公开(公告)号：US20200377538A1

公开(公告)日：2020-12-03

申请号：US16996459

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10608097B2

公开(公告)日：2020-03-31

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L21/285 ,  H01L21/8234 ,  H01L21/8238

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US20200035486A1

公开(公告)日：2020-01-30

申请号：US16590734

申请日：2019-10-02

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US10510546B2

公开(公告)日：2019-12-17

申请号：US16429573

申请日：2019-06-03

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/285 ,  H01L21/321 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.

公开(公告)号：US20180144980A1

公开(公告)日：2018-05-24

申请号：US15801949

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick ,  Ziqing Duan ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/033 ,  H01L21/762

CPC classification number: H01L21/76897 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/266 ,  H01L21/32133 ,  H01L21/76227

Abstract: Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

公开(公告)号：US11078224B2

公开(公告)日：2021-08-03

申请号：US15947697

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu

IPC: C23C16/18 ,  C07F15/06 ,  C07F13/00 ,  C07F15/00 ,  C23C16/455 ,  C07F15/04 ,  C07F15/02 ,  C07F7/08

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where A1, A2, A3, and A4 are atoms in a 6-membered ring and are independently selected from C, N, O, S, and P; and where R1, R2, R3, R4, R5, and R6 are independently selected from the group consisting of H, amino groups, C1-C6 alkyl groups, or C4-10 cycloalkyl groups; and further provided that alkyl groups may optionally contain silicon; and where the metal coordination complex is capable of participating in a Diels-Alder type reaction with a dienophile. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10752649B2

公开(公告)日：2020-08-25

申请号：US15947695

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Atashi Basu ,  David Thompson ,  Nasrin Kazem

IPC: C07F15/06 ,  C23C16/455 ,  C23C16/18

Abstract: Metal coordination complexes comprising at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are selected from the group consisting of C4-C10 alkyl groups; and R2 and R3 are each independently selected from the group consisting of H, C1-C6 alkyl, cycloalkyl, or aryl groups and the difference in the number of carbons in R2 and R3 is greater than or equal to 2. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20200234959A1

公开(公告)日：2020-07-23

申请号：US16841625

申请日：2020-04-06

Applicant: Applied Materials, Inc.

Inventor： Siddarth Krishnan ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Paul F. Ma

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L29/51 ,  H01L21/321

Abstract: Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

公开(公告)号：US20190287807A1

公开(公告)日：2019-09-19

申请号：US16429573

申请日：2019-06-03

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/285 ,  H01L21/321 ,  H01L21/02 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.

公开(公告)号：US20190181011A1

公开(公告)日：2019-06-13

申请号：US16216500

申请日：2018-12-11

Applicant: Applied Materials, Inc.

Inventor： Siddarth Krishnan ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Paul F. Ma

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/51 ,  H01L21/285 ,  H01L29/49 ,  H01L29/40

Abstract: Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.