公开(公告)号：US20210333703A1

公开(公告)日：2021-10-28

申请号：US17234996

申请日：2021-04-20

Applicant: Applied Materials, Inc

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：US11815809B2

公开(公告)日：2023-11-14

申请号：US17209707

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Azeddine Zerrade ,  Vibhu Jindal

IPC: G03F1/58 ,  G03F1/24

CPC classification number: G03F1/58 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.

公开(公告)号：US20210124253A1

公开(公告)日：2021-04-29

申请号：US17077170

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Herng Yau Yoong ,  Wen Xiao ,  Vibhu Jindal ,  Shuwei Liu ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F7/16 ,  G03F1/48

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. A method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, depositing a multilayer stack, removing the substrate from the chamber and passivating the PVD chamber.

公开(公告)号：US11860533B2

公开(公告)日：2024-01-02

申请号：US17209707

申请日：2021-03-23

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Azeddine Zerrade ,  Vibhu Jindal

IPC: G03F1/58 ,  G03F1/24

CPC classification number: G03F1/58 ,  G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprises a first layer selected from the group consisting of Mo, Nb, V, alloys of Mo, Nb and V, oxides of Mo, oxides of Nb, oxides of V, nitrides of Mo, nitrides of Nb and nitrides of V and a second layer selected from the group consisting of TaSb, CSb, SbN, TaNi, TaCu and TaRu.

公开(公告)号：US11630385B2

公开(公告)日：2023-04-18

申请号：US17152068

申请日：2021-01-19

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tantalum and ruthenium.

公开(公告)号：US20210232042A1

公开(公告)日：2021-07-29

申请号：US17157096

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal ,  Azeddine Zerrade ,  Ramya Ramalingam

IPC: G03F1/24 ,  C22C12/00 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.

公开(公告)号：US20210232040A1

公开(公告)日：2021-07-29

申请号：US17157088

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24 ,  C22C12/00 ,  G03F1/54

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

公开(公告)号：US20210124252A1

公开(公告)日：2021-04-29

申请号：US17077176

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Sanjay Bhat ,  Shiyu Liu ,  Binni Varghese ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/22 ,  C23C14/34 ,  C23C14/06 ,  H01J37/34

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

公开(公告)号：US11640109B2

公开(公告)日：2023-05-02

申请号：US17157096

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Shiyu Liu ,  Vibhu Jindal ,  Azeddine Zerrade ,  Ramya Ramalingam

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.

公开(公告)号：US11556053B2

公开(公告)日：2023-01-17

申请号：US17157088

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Shuwei Liu ,  Wen Xiao ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.