ATOMIC LAYER DEPOSITION OF PROTECTIVE COATINGS FOR SEMICONDUCTOR PROCESS CHAMBER COMPONENTS

    公开(公告)号:US20220235458A1

    公开(公告)日:2022-07-28

    申请号:US17718205

    申请日:2022-04-11

    Abstract: A method comprises depositing a first layer of aluminum oxide onto a surface of a chamber component via atomic layer deposition (ALD). The method further comprises depositing a second layer of yttrium oxide onto a surface of the chamber component via ALD, depositing a third layer of zirconium oxide onto the surface of the chamber component via ALD, and forming a corrosion and erosion resistant coating comprising a YZrxOy solid state phase of the second layer and the third layer, wherein x and y have values that are based on a number of repetitions of the atomic layer deposition process that are used to deposit the second layer and a number of repetitions of the atomic layer deposition process that are used to deposit the third layer.

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