公开(公告)号：US20160345384A1

公开(公告)日：2016-11-24

申请号：US14997842

申请日：2016-01-18

Applicant: Applied Materials, Inc.

Inventor： Chunlei Zhang ,  Philip Criminale ,  Steven E. Babayan ,  David Ullstrom

IPC: H05B1/02 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683

CPC classification number: H05B1/0233 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L22/20

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on the ESC having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate from a target result profile. The first temperature profile is adjusted to a second temperature profile on the ESC based on the deviation profile. Adjusting to the second temperature profile includes incrementing the power to one or more spatially tunable heaters in one or more discrete locations corresponding to the deviations profile. A second substrate is then processed on the ESC using the second temperature profile.

Abstract translation: 本文所述的实施方案提供了一种用于处理衬底支撑组件上的衬底的方法，该衬底支撑组件能够实现静电卡盘和衬底之间的热传递的侧向和方位调节。 该方法包括使用具有初级加热器和空间可调谐加热器的ESC上的第一温度曲线来处理第一基板。 从目标结果轮廓处理第一基底的结果确定偏差分布。 基于偏差曲线，第一温度曲线被调整到ESC上的第二温度曲线。 调整到第二温度曲线包括在对应于偏差轮廓的一个或多个离散位置中增加对一个或多个空间可调谐加热器的功率。 然后使用第二温度曲线在ESC上处理第二衬底。

公开(公告)号：US10440777B2

公开(公告)日：2019-10-08

申请号：US14997842

申请日：2016-01-18

Applicant: Applied Materials, Inc.

Inventor： Chunlei Zhang ,  Phillip Criminale ,  Steven E. Babayan ,  David Ullstrom

IPC: H05B3/68 ,  C23C16/00 ,  H05B1/02 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on the ESC having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate from a target result profile. The first temperature profile is adjusted to a second temperature profile on the ESC based on the deviation profile. Adjusting to the second temperature profile includes incrementing the power to one or more spatially tunable heaters in one or more discrete locations corresponding to the deviations profile. A second substrate is then processed on the ESC using the second temperature profile.

公开(公告)号：US11622419B2

公开(公告)日：2023-04-04

申请号：US16595801

申请日：2019-10-08

Applicant: Applied Materials, Inc.

Inventor： Chunlei Zhang ,  Phillip Criminale ,  Steven E. Babayan ,  David Ullstrom

IPC: H05B3/68 ,  H05B1/02 ,  H01L21/67 ,  H01L21/683 ,  H01L21/66

Abstract: Implementations described herein provide a method for processing a substrate on a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a substrate. The method includes processing a first substrate using a first temperature profile on a substrate support assembly having primary heaters and spatially tunable heaters. A deviation profile is determined from a result of processing the first substrate. The spatially tunable heaters are controlled in response to the deviation profile to enable discrete lateral and azimuthal tuning of local hot or cold spots on the substrate support assembly in forming a second temperature profile. A second substrate is then processed using the second temperature profile.