中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

43 records (took 0.018 seconds)

    Ion Source For Controlling Decomposition Buildup Using Chlorine Co-Gas
    2.
    发明公开
    Ion Source For Controlling Decomposition Buildup Using Chlorine Co-Gas 审中-公开

    公开(公告)号：US20240249904A1

    公开(公告)日：2024-07-25

    申请号：US18099353

    申请日：2023-01-20

    Applicant: Applied Materials, Inc.

    Inventor： Mateo Navarro Goldaraz ,  Graham Wright ,  Ori Noked

    IPC: H01J27/02 ,  H01J27/26

    CPC classification number: H01J27/022 ,  H01J27/26

    Abstract: An ion source for generating an ion beam containing aluminum ions is disclosed. The ion source includes a first gas source to introduce an organoaluminium compound into the arc chamber of the ion source. A second gas, different from the first gas, which is a chlorine-containing gas is also introduced to the arc chamber. The chloride co-flow reduces the buildup of decomposition material that occurs within the arc chamber. This buildup may occur at the gas bushing, the extraction aperture or near the repeller. In some embodiments, the second gas is introduced continuously. In other embodiments, the second gas is periodically introduced, based on hours of operation or the measured uniformity of the extracted ion beam. The second gas may be introduced from second gas source or from a vaporizer.

    HYBRID ION SOURCE FOR ALUMINUM ION GENERATION USING A TARGET HOLDER AND ORGANOALUMINIUM COMPOUNDS
    3.
    发明公开
    HYBRID ION SOURCE FOR ALUMINUM ION GENERATION USING A TARGET HOLDER AND ORGANOALUMINIUM COMPOUNDS 审中-公开

    公开(公告)号：US20230369006A1

    公开(公告)日：2023-11-16

    申请号：US17740848

    申请日：2022-05-10

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Shardul S. Patel

    IPC: H01J37/08 ,  H01J37/32 ,  H01J37/34

    CPC classification number: H01J37/08 ,  H01J37/32055 ,  H01J37/342 ,  H01J37/3426 ,  H01J37/3244 ,  H01J2237/08

    Abstract: An ion source that is capable of different modes of operation is disclosed. The ion source includes an insertable target holder includes a hollow interior into which the solid dopant material is disposed. The target holder may a porous surface at a first end, through which vapors from the solid dopant material may enter the arc chamber. The porous surface inhibits the passage of liquid or molten dopant material into the arc chamber. The target holder is also constructed such that it may be refilled with dopant material when the dopant material within the hollow interior has been consumed. The ion source may have several gas inlets. When the insertable target holder is used, the ion source may supply a first gas, such as a halogen containing gas. When operating in a second mode, the ion source may utilize an organoaluminium gas.

    Advanced Sputter Targets For Ion Generation
    8.
    发明申请
    Advanced Sputter Targets For Ion Generation 审中-公开

    公开(公告)号：US20200157675A1

    公开(公告)日：2020-05-21

    申请号：US16191526

    申请日：2018-11-15

    Applicant: APPLIED Materials, Inc.

    Inventor： Graham Wright ,  Klaus Becker

    IPC: C23C14/34 ,  H01J37/34

    Abstract: An advanced sputter target is disclosed. The advanced sputter target comprises two components, a porous carrier, and a metal material disposed within that porous carrier. The porous carrier is designed to be a high porosity, open cell structure such that molten material may flow through the carrier. The porous carrier also provides structural support for the metal material. The cell sizes of the porous carrier are dimensioned such that the capillary action and surface tension prohibits the metal material from spilling, dripping, or otherwise exiting the porous carrier. In some embodiments, the porous carrier is an open cell foam, a weave of strands or stacked meshes.

    Ion Source Containing a Sputter Target
    9.
    发明申请
    Ion Source Containing a Sputter Target 有权

    公开(公告)号：US20250079113A1

    公开(公告)日：2025-03-06

    申请号：US18238884

    申请日：2023-08-28

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright

    IPC: H01J37/08 ,  H01J37/317

    Abstract: An ion source with a sputter target located at the end of the ion source is disclosed. The ion source may include an indirectly heated cathode and the sputter target may be disposed on the end opposite the cathode. The ion source may contain one or more side electrodes, wherein at least one of these electrodes is electrically biased relative to the arc chamber. In one embodiment, the second end of the ion source is made of a dopant containing material and serves as the sputter target. In another embodiment, there is an opening in the second end, and an insert is disposed in this opening. The insert is made of a dopant containing material and serves as the sputter target.

    Ion source having different modes of operation
    10.
    发明授权
    Ion source having different modes of operation 有权

    公开(公告)号：US12154766B2

    公开(公告)日：2024-11-26

    申请号：US17834445

    申请日：2022-06-07

    Applicant: Applied Materials, Inc.

    Inventor： Graham Wright ,  Shardul S. Patel

    IPC: H01J37/32 ,  C23C16/448

    Abstract: An ion source that is capable of different modes of operation is disclosed. A vaporizer is in communication with the ion source. The ion source may have several gas inlets, in communication with different gasses. When operating in a first mode, the ion source may supply a first gas, such as an inert gas, while heating the vaporizer. When operating in a second mode, the ion source may supply a second gas, which may be an organoaluminium gas. When operating in a third mode, the ion source may supply the second gas, while heating the vaporizer. Ions having single charges may be created in the first and second modes, while ions having multiple charges may be created in the third mode.

Patent Agency Ranking