公开(公告)号：US20240109163A1

公开(公告)日：2024-04-04

申请号：US18537574

申请日：2023-12-12

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Shou-Sung Chang ,  Chih Chung Chou ,  Jianshe Tang ,  Hui Chen ,  Hari Soundararajan ,  Brian J. Brown

IPC: B24B37/015 ,  B24B57/02 ,  H01L21/321 ,  H01L21/67

CPC classification number: B24B37/015 ,  B24B57/02 ,  H01L21/3212 ,  H01L21/67248

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

公开(公告)号：US11865671B2

公开(公告)日：2024-01-09

申请号：US16849884

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Shou-Sung Chang ,  Jianshe Tang ,  Chih Chung Chou ,  Hui Chen ,  Hari Soundararajan ,  Benjamin Cherian

IPC: B24B57/02 ,  H01L21/304 ,  B24B37/04 ,  B24B37/015 ,  B24B37/10 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  B24B53/017 ,  B24B49/14

CPC classification number: B24B57/02 ,  B24B37/015 ,  B24B37/042 ,  B24B37/105 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  H01L21/304 ,  B24B49/14 ,  B24B53/017

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.

公开(公告)号：US11697187B2

公开(公告)日：2023-07-11

申请号：US16849912

申请日：2020-04-15

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Shou-Sung Chang ,  Jianshe Tang ,  Chih Chung ,  Hui Chen ,  Hari Soundararajan ,  Benjamin Cherian

IPC: B24B1/00 ,  B24B57/02 ,  H01L21/304 ,  B24B37/04 ,  B24B37/015 ,  B24B37/10 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  B24B53/017 ,  B24B49/14

CPC classification number: B24B57/02 ,  B24B37/015 ,  B24B37/042 ,  B24B37/105 ,  B24B37/22 ,  B24B37/34 ,  B24B55/02 ,  H01L21/304 ,  B24B49/14 ,  B24B53/017

Abstract: A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

公开(公告)号：US11577358B2

公开(公告)日：2023-02-14

申请号：US16932615

申请日：2020-07-17

Applicant: Applied Materials, Inc.

Inventor： Surajit Kumar ,  Hui Chen ,  Chih Chung Chou ,  Shou-Sung Chang

IPC: B24B49/00 ,  B24B37/015 ,  B24B37/34

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, and a pad cooling assembly. The pad cooling assembly has an arm extending over the platen, a nozzle suspended by the arm and coupled to a source of coolant fluid, the nozzle positioned to spray coolant fluid from the source onto the polishing surface of the polishing pad, and an opening in the arm adjacent the nozzle and a passage extending in the arm from the opening, the opening positioned sufficiently close to the nozzle that a flow of coolant fluid from the nozzle entrains air from the opening.

公开(公告)号：US20200376626A1

公开(公告)日：2020-12-03

申请号：US16886238

申请日：2020-05-28

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Hari Soundararajan ,  Shou-Sung Chang ,  Paul D. Butterfield ,  Hui Chen ,  Chih Chung Chou ,  Alexander John Fisher

IPC: B24B53/017 ,  B24B57/02 ,  B24B53/00

Abstract: A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.

公开(公告)号：US10434623B2

公开(公告)日：2019-10-08

申请号：US15456320

申请日：2017-03-10

Applicant: Applied Materials, Inc.

Inventor： Eric Lau ,  Hui Chen ,  King Yi Heung ,  Wei-Cheng Lee ,  Chih Chung Chou ,  Edwin C. Suarez ,  Garrett Ho Yee Sin ,  Charles C. Garretson ,  Jeonghoon Oh

IPC: B24B37/26 ,  B24B37/30

Abstract: A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

公开(公告)号：US12296427B2

公开(公告)日：2025-05-13

申请号：US16989734

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Shou-Sung Chang ,  Chih Chung Chou ,  Jianshe Tang ,  Hui Chen ,  Hari Soundararajan ,  Brian J. Brown

IPC: B24B37/015 ,  B24B57/02 ,  H01L21/321 ,  H01L21/67

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

公开(公告)号：US12243761B2

公开(公告)日：2025-03-04

申请号：US18050384

申请日：2022-10-27

Applicant: Applied Materials, Inc.

Inventor： Martin Jeffrey Salinas ,  Zhepeng Cong ,  Hui Chen ,  Xinning Luan ,  Ashur J. Atanos

IPC: H01L21/67 ,  H01L21/687

Abstract: An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus coupled to the process chamber to provide information related to the substrate support via imaging when the substrate support is disposed within the process chamber.

公开(公告)号：US12180611B2

公开(公告)日：2024-12-31

申请号：US18492482

申请日：2023-10-23

Applicant: Applied Materials, Inc.

Inventor： Yen Lin Leow ,  Xinning Luan ,  Hui Chen ,  Kirk Allen Fisher ,  Shawn Thomas

IPC: C30B25/16 ,  C30B25/10 ,  C30B25/18 ,  C30B29/36 ,  C30B29/68

Abstract: Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

公开(公告)号：US20230256562A1

公开(公告)日：2023-08-17

申请号：US18305793

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Haosheng Wu ,  Jianshe Tang ,  Hari Soundararajan ,  Shou-Sung Chang ,  Paul D. Butterfield ,  Hui Chen ,  Chih Chung Chou ,  Alexander John Fisher

IPC: B24B53/017 ,  B24B53/00 ,  B24B57/02

CPC classification number: B24B53/017 ,  B24B53/005 ,  B24B57/02 ,  B24B41/061

Abstract: A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to raise a temperature of the component to an elevated temperature, and before the component returns to an ambient temperature, moving the component into contact with the polishing pad.