公开(公告)号：US10707061B2

公开(公告)日：2020-07-07

申请号：US15581425

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US20200058516A1

公开(公告)日：2020-02-20

申请号：US16665834

申请日：2019-10-28

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/3213 ,  H01J37/32 ,  C23C16/52 ,  C23C16/455 ,  C23C16/452 ,  C23C16/44 ,  H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3065 ,  C23C16/50 ,  G01J3/02 ,  G01J3/443

Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

公开(公告)号：US20180102255A1

公开(公告)日：2018-04-12

申请号：US15288898

申请日：2016-10-07

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang ,  Nitin Ingle

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/0217 ,  H01L21/02323

Abstract: Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.

公开(公告)号：US09768034B1

公开(公告)日：2017-09-19

申请号：US15349530

申请日：2016-11-11

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  B08B7/00

CPC classification number: H01L21/32136 ,  B08B7/00 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.

公开(公告)号：US20160240402A1

公开(公告)日：2016-08-18

申请号：US15139243

申请日：2016-04-26

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32972 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45559 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US20160027673A1

公开(公告)日：2016-01-28

申请号：US14875479

申请日：2015-10-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan Wang ,  Xinglong Chen ,  Zihui Li ,  Hiroshi Hamana ,  Zhijun Chen ,  Ching-Mei Hsu ,  Jiayin Huang ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Shankar Venkataraman ,  Randhir Thakur

IPC: H01L21/67 ,  H01L21/677

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

公开(公告)号：US20250112051A1

公开(公告)日：2025-04-03

申请号：US18375207

申请日：2023-09-29

Applicant: Applied Materials, Inc.

Inventor： Jiayin Huang ,  Zihui Li ,  Yi Jin ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01L21/02

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A first layer of silicon-and-germanium-containing material, a second layer of silicon-and-germanium-containing material, and a layer of silicon-containing material may be disposed on the substrate. The methods may include contacting the substrate with the oxygen-containing precursor. The contacting may oxidize at least a portion of the second layer of silicon-and-germanium-containing material. The methods may include providing a first etchant precursor to the processing region and contacting the substrate with the first etchant precursor. The contacting may selectively etch the first layer of silicon-and-germanium-containing material. The methods may include providing a second etchant precursor to the processing region. The methods may include contacting the substrate with the second etchant precursor. The contacting may etch a portion of the layer of silicon-containing material.

公开(公告)号：US10283324B1

公开(公告)日：2019-05-07

申请号：US15792303

申请日：2017-10-24

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Anchuan Wang ,  Jiayin Huang

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/76 ,  H01L33/44

Abstract: Exemplary methods for laterally etching silicon nitride may include flowing oxygen-containing plasma effluents into a processing region of a semiconductor processing chamber. A substrate positioned within the processing region may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents. The methods may include flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor. The methods may include forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may include flowing the plasma effluents into the processing region of the semiconductor processing chamber. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench.

公开(公告)号：US20190122865A1

公开(公告)日：2019-04-25

申请号：US15792303

申请日：2017-10-24

Applicant: Applied Materials, Inc.

Inventor： Zhijun Chen ,  Anchuan Wang ,  Jiayin Huang

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/768

Abstract: Exemplary methods for laterally etching silicon nitride may include flowing oxygen-containing plasma effluents into a processing region of a semiconductor processing chamber. A substrate positioned within the processing region may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include passivating exposed surfaces of the silicon nitride with the oxygen-containing plasma effluents. The methods may include flowing a fluorine-containing precursor into the remote plasma region while maintaining the flow of the oxygen-containing precursor. The methods may include forming plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may include flowing the plasma effluents into the processing region of the semiconductor processing chamber. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench.

公开(公告)号：US10186428B2

公开(公告)日：2019-01-22

申请号：US15707638

申请日：2017-09-18

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang

IPC: H01L21/3213 ,  B08B7/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/02 ,  H01L21/311

Abstract: Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.