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    Selective epitaxial germanium growth on silicon-trench fill and in situ doping
    3.
    发明授权
    Selective epitaxial germanium growth on silicon-trench fill and in situ doping 有权
    硅沟填充和原位掺杂的选择性外延锗生长

    公开(公告)号：US08652951B2

    公开(公告)日：2014-02-18

    申请号：US13765733

    申请日：2013-02-13

    Applicant: Applied Materials, Inc.

    Inventor： Yi-Chiau Huang ,  Jiping Li ,  Miao Jin ,  Bingxi Sun Wood ,  Errol Antonio C. Sanchez ,  Yihwan Kim

    IPC: H01L21/20

    CPC classification number: H01L21/02694 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/02675

    Abstract: Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.

    Abstract translation: 描述了在图案化衬底上形成含锗膜的方法和装置。 图案化衬底是硅或含硅材料，并且可以在其表面上形成掩模材料。 含锗材料在衬底的凹槽中的暴露的硅上选择性地形成，并且在衬底上形成至少50％的覆盖层。 使用脉冲激光辐射对含锗层进行热处理，所述脉冲激光辐射熔化上覆层的一部分，但不熔化凹陷中的含锗材料。 凹陷中的含锗材料通常通过热处理至少部分退火。 然后卸下覆盖层。

    Melt depth determination using infrared interferometric technique in pulsed laser annealing
    4.
    发明授权
    Melt depth determination using infrared interferometric technique in pulsed laser annealing 有权

    公开(公告)号：US11490466B2

    公开(公告)日：2022-11-01

    申请号：US16277409

    申请日：2019-02-15

    Applicant: Applied Materials, Inc.

    Inventor： Jiping Li

    IPC: F21V7/00 ,  G02B17/00 ,  H05B6/00 ,  G01B11/06 ,  H01L21/67

    Abstract: Methods and apparatus for measuring the melt depth of a substrate during pulsed laser melting are provided. The apparatus can include a heat source, a substrate support with an opening formed therein, and an interferometer positioned to direct coherent radiation toward the toward the substrate support. The method can include positioning the substrate with a first surface in a thermal processing chamber, heating a portion of the first surface with a heat source, directing infrared spectrum radiation at a partially reflective mirror creating control radiation and interference radiation, directing the interference radiation to a melted surface and directing the control radiation to a control surface, and measuring the interference between the reflected radiation. The interference fringe pattern can be used to determine the precise melt depth during the melt process.

    Support cylinder for thermal processing chamber
    6.
    发明授权
    Support cylinder for thermal processing chamber 有权

    公开(公告)号：US09659809B2

    公开(公告)日：2017-05-23

    申请号：US15188706

    申请日：2016-06-21

    Applicant: Applied Materials, Inc.

    Inventor： Mehran Behdjat ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Norman Tam ,  Jeffrey Tobin ,  Jiping Li ,  Martin Tran

    IPC: H01L21/687 ,  H01L21/324 ,  H01L21/67

    CPC classification number: H01L21/68735 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68757

    Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder includes a hollow cylindrical body comprising an inner peripheral surface, an outer peripheral surface parallel to the inner peripheral surface, wherein the inner peripheral surface and the outer peripheral surface extend along a direction parallel to a longitudinal axis of the support cylinder, and a lateral portion extending radially from the outer peripheral surface to the inner peripheral surface, wherein the lateral portion comprises a first end having a first beveled portion, a first rounded portion, and a first planar portion connecting the first beveled portion and the first rounded portion, and a second end opposing the first end, the second end having a second beveled portion, a second rounded portion, and a second planar portion connecting the second beveled portion and the second rounded portion.

    Support cylinder for thermal processing chamber
    9.
    发明授权
    Support cylinder for thermal processing chamber 有权
    支撑筒用于热处理室

    公开(公告)号：US09385004B2

    公开(公告)日：2016-07-05

    申请号：US14298389

    申请日：2014-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Mehran Behdjat ,  Aaron Muir Hunter ,  Joseph M. Ranish ,  Norman Tam ,  Jeffrey Tobin ,  Jiping Li ,  Martin Tran

    IPC: H01L21/683 ,  H01L21/324 ,  F16C13/00 ,  B05D7/22 ,  H01L21/67 ,  H01L21/687

    CPC classification number: H01L21/68735 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/68757

    Abstract: Embodiments of the disclosure generally relate to a support cylinder used in a thermal process chamber. In one embodiment, the support cylinder comprises a ring body having an inner peripheral surface and an outer peripheral surface, wherein the ring body comprises an opaque quartz glass material and wherein the ring body is coated with an optical transparent layer. The optical transparent layer has a coefficient of thermal expansion that is substantially matched or similar to the opaque quartz glass material to reduce thermal expansion mismatch that may cause thermal stress under high thermal loads. In one example, the opaque quartz glass material is synthetic black quartz and the optical transparent layer comprises a clear fused quartz material.

    Abstract translation: 本公开的实施例一般涉及在热处理室中使用的支撑筒。 在一个实施例中，支撑筒包括具有内周表面和外周表面的环体，其中环体包括不透明的石英玻璃材料，并且其中环体涂覆有光学透明层。 光学透明层的热膨胀系数基本上与不透明的石英玻璃材料匹配或类似，以减少在高热负荷下可能引起热应力的热膨胀失配。 在一个实例中，不透明石英玻璃材料是合成黑色石英，光学透明层包括透明的熔融石英材料。

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