公开(公告)号：US12106943B2

公开(公告)日：2024-10-01

申请号：US17329883

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Jay R. Wallace ,  Simon Ruffell ,  Kevin R. Anglin ,  Tyler Rockwell ,  Christopher Campbell ,  Kevin M. Daniels ,  Richard J. Hertel ,  Kevin T. Ryan

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32467 ,  H01J37/32724

Abstract: A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

公开(公告)号：US20220384156A1

公开(公告)日：2022-12-01

申请号：US17329883

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Jay R. Wallace ,  Simon Ruffell ,  Kevin R. Anglin ,  Tyler Rockwell ,  Christopher Campbell ,  Kevin M. Daniels ,  Richard J. Hertel ,  Kevin T. Ryan

IPC: H01J37/32

Abstract: A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

公开(公告)号：US20230124509A1

公开(公告)日：2023-04-20

申请号：US17503334

申请日：2021-10-17

Applicant: Applied Materials, Inc.

Inventor： Costel Biloiu ,  Jay R. Wallace ,  Solomon Belangedi Basame ,  Kevin R. Anglin ,  Tyler Rockwell

IPC: H01J37/32

Abstract: An extraction assembly may include an extraction plate for placement along a side of a plasma chamber, and having an extraction aperture, elongated along a first direction, and having an aperture height, extending along a second direction, perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture, lying in a first plane. A beam blocker is disposed over the extraction aperture, and has an outer surface, disposed in a second plane, different than the first plane. As such, the beam blocker overlaps with the extraction plate along a first edge of the extraction aperture by a first overlap distance, and overlaps with the extraction plate along a second edge of the extraction aperture by a second overlap distance, so as to define a first extraction slit, along the first edge, and a second extraction slit along the second edge.

公开(公告)号：US10665421B2

公开(公告)日：2020-05-26

申请号：US16156434

申请日：2018-10-10

Applicant: APPLIED Materials, Inc.

Inventor： Tsung-Liang Chen ,  Kevin R. Anglin ,  Simon Ruffell

IPC: H01J37/20 ,  H01J37/08 ,  H01J37/244

Abstract: A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.

公开(公告)号：US20230238264A1

公开(公告)日：2023-07-27

申请号：US18129161

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell

IPC: H01L21/673 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/673 ,  H01L21/02694 ,  H01L21/67248

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

公开(公告)号：US11646213B2

公开(公告)日：2023-05-09

申请号：US16865860

申请日：2020-05-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell

IPC: H01L21/3065 ,  H01L21/673 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/673 ,  H01L21/02694 ,  H01L21/67248

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

公开(公告)号：US12191117B2

公开(公告)日：2025-01-07

申请号：US17503334

申请日：2021-10-17

Applicant: Applied Materials, Inc.

Inventor： Costel Biloiu ,  Jay R. Wallace ,  Solomon Belangedi Basame ,  Kevin R. Anglin ,  Tyler Rockwell

IPC: H01J37/32

Abstract: An extraction assembly may include an extraction plate for placement along a side of a plasma chamber, and having an extraction aperture, elongated along a first direction, and having an aperture height, extending along a second direction, perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture, lying in a first plane. A beam blocker is disposed over the extraction aperture, and has an outer surface, disposed in a second plane, different than the first plane. As such, the beam blocker overlaps with the extraction plate along a first edge of the extraction aperture by a first overlap distance, and overlaps with the extraction plate along a second edge of the extraction aperture by a second overlap distance, so as to define a first extraction slit, along the first edge, and a second extraction slit along the second edge.

公开(公告)号：US20220246397A1

公开(公告)日：2022-08-04

申请号：US17167416

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell ,  Kevin Verrier

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

公开(公告)号：US20250112052A1

公开(公告)日：2025-04-03

申请号：US18478878

申请日：2023-09-29

Applicant: Applied Materials, Inc.

Inventor： Yi-Hsin CHEN ,  Kevin R. Anglin ,  Yong Yang ,  Solomon Belangedi Basame ,  Yung-Chen Lin ,  Gang Shu

IPC: H01L21/3065

Abstract: Disclosed herein are methods for forming opening ends within semiconductor structures. In some embodiments, a method may include providing an opening formed in a layer of a semiconductor device, wherein the opening comprises a set of sidewalls opposite one another, and first and second end walls connected to the sidewalls, wherein each of the first and second end walls defines a tip end and a set of curved sections extending between the tip end and the set of sidewall. The method may further include performing an ion etch to the opening by delivering an ion beam at a non-zero angle relative to a plane defined by the layer of the semiconductor device, wherein the ion etch comprises a lean-gas chemistry, and wherein the ion etch causes the layer of the semiconductor device to be removed faster along the set of curved sections than along the set of sidewalls.

公开(公告)号：US11664193B2

公开(公告)日：2023-05-30

申请号：US17167416

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell ,  Kevin Verrier

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32

CPC classification number: H01J37/3053 ,  H01J37/304 ,  H01J37/32724 ,  H01J2237/0203 ,  H01J2237/3151

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.