公开(公告)号：US11939674B2

公开(公告)日：2024-03-26

申请号：US18116609

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/30 ,  C23C16/38 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/303 ,  C23C16/38 ,  H01J37/32009

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20220020583A1

公开(公告)日：2022-01-20

申请号：US16932793

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/24

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US12106958B2

公开(公告)日：2024-10-01

申请号：US18342296

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar Singh ,  Rick Kustra ,  Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Krishna Nittala ,  Pramit Manna ,  Kaushik Alayavalli ,  Ganesh Balasubramanian

IPC: H01L21/02 ,  B08B7/00 ,  C23C16/26 ,  C23C16/44 ,  C23C16/505 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/02274 ,  B08B7/0035 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/02115 ,  H01L21/0332

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

公开(公告)号：US11827514B2

公开(公告)日：2023-11-28

申请号：US17081086

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Krishna Nittala ,  Karthik Janakiraman ,  Yi Yang ,  Gautam K. Hemani

IPC: C01B33/04 ,  C01B35/02

CPC classification number: C01B33/043 ,  C01B35/02 ,  C01P2002/02 ,  C01P2006/90

Abstract: Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

公开(公告)号：US11532525B2

公开(公告)日：2022-12-20

申请号：US17191026

申请日：2021-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Anton V Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/66 ,  G05B13/04 ,  G05B13/02 ,  H01L21/67

Abstract: Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.

公开(公告)号：US20220020599A1

公开(公告)日：2022-01-20

申请号：US17378720

申请日：2021-07-18

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Karthik Janakiraman ,  Rui Cheng ,  Krishna Nittala ,  Menghui Li ,  Ming-Yuan Chuang ,  Susumu Shinohara ,  Juan Guo ,  Xiawan Yang ,  Russell Chin Yee Teo ,  Zihui Li ,  Chia-Ling Kao ,  Qu Jin ,  Anchuan Wang

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32

Abstract: Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

公开(公告)号：US20210140045A1

公开(公告)日：2021-05-13

申请号：US17087346

申请日：2020-11-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/455 ,  C23C16/38 ,  C23C16/30 ,  H01J37/32

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20250112046A1

公开(公告)日：2025-04-03

申请号：US18980163

申请日：2024-12-13

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

Abstract: Exemplary semiconductor processing methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a boron-containing precursor into the substrate processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-silicon-containing layer on a substrate in the substrate processing region of the semiconductor processing chamber. The boron-and-silicon-containing layer may be characterized by an increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer opposite the first surface. A flow rate of the boron-containing precursor may be increased during the deposition of the boron-and-silicon-containing layer.

公开(公告)号：US20230298892A1

公开(公告)日：2023-09-21

申请号：US18016926

申请日：2021-07-21

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Rajesh Prasad ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Shan Tang ,  Qi Gao

IPC: H01L21/265 ,  H01L21/02

CPC classification number: H01L21/26506 ,  H01L21/02532 ,  H01L21/02592

Abstract: Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of hydrogen incorporation. The methods may include performing a beamline ion implantation process or plasma doping process on the layer of amorphous silicon. The methods may include removing hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.

公开(公告)号：US11721545B2

公开(公告)日：2023-08-08

申请号：US17035107

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar Singh ,  Rick Kustra ,  Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Krishna Nittala ,  Pramit Manna ,  Kaushik Comandoor Alayavalli ,  Ganesh Balasubramanian

IPC: H01L21/02 ,  H01L21/033 ,  H01J37/32 ,  B08B7/00 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44

CPC classification number: H01L21/02274 ,  B08B7/0035 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32862 ,  H01L21/02115 ,  H01L21/0332

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.