公开(公告)号：US12018363B2

公开(公告)日：2024-06-25

申请号：US16577220

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC: C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768

CPC classification number: C23C16/303 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44 ,  H01L21/02274 ,  H01L21/76224 ,  H01L21/76837 ,  C23C16/45536 ,  C23C16/50

Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US11942330B2

公开(公告)日：2024-03-26

申请号：US17836694

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31122 ,  H01L21/02175

Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.

公开(公告)号：US11702733B2

公开(公告)日：2023-07-18

申请号：US17315223

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC: C23C16/04 ,  C23C16/02 ,  H01L21/02 ,  H01L21/32 ,  C23C16/56

CPC classification number: C23C16/042 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/32 ,  H01L21/0217 ,  H01L21/02211

Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20200095674A1

公开(公告)日：2020-03-26

申请号：US16577220

申请日：2019-09-20

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Lakmal C. Kalutarage ,  Jeffrey W. Anthis ,  Tatsuya E. Sato

IPC: C23C16/30 ,  H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  C23C16/32 ,  C23C16/56 ,  C23F1/44

Abstract: Methods for depositing film comprise depositing an aluminum-containing gap-fill film in a bottom-up manner in a feature of a substrate surface. The substrate can be sequentially exposed to an aluminum-containing precursor, a reactant, a fluorinating agent, and an etchant any number of times to promote bottom-up growth of the film in the feature.

公开(公告)号：US20200006056A1

公开(公告)日：2020-01-02

申请号：US16456978

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  Lakmal C. Kalutarage ,  David Thompson

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56

Abstract: Chromium containing precursors and methods of forming chromium-containing thin films are described. The chromium precursor has a chromium-diazadiene bond or cyclopentadienyl ligand and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic chromium film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising chromium with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described. Methods of filling gaps in a substrate with a chromium-containing film are also described.

公开(公告)号：US20190017171A1

公开(公告)日：2019-01-17

申请号：US15649584

申请日：2017-07-13

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  Thomas Knisley ,  Benjamin Schmiege ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.

公开(公告)号：US12131900B2

公开(公告)日：2024-10-29

申请号：US17873793

申请日：2022-07-26

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lakmal C. Kalutarage ,  Thomas Joseph Knisley

IPC: C23C16/00 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/0245 ,  C23C16/308 ,  C23C16/45525 ,  H01L21/02118 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/31138

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.

公开(公告)号：US20240120193A1

公开(公告)日：2024-04-11

申请号：US17960569

申请日：2022-10-05

Applicant: Applied Materials, Inc.

Inventor： Shankar Venkataraman ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Lakmal C. Kalutarage ,  Jongbeom Seo ,  Sai Hooi Yeong ,  Benjamin Colombeau ,  Balasubramanian Pranatharthiharan

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L21/02126 ,  H01L21/0206 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/31116 ,  H01L29/66439 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/42392

Abstract: Exemplary methods of semiconductor processing may include etching a portion of a silicon-containing material from a substrate disposed within a processing region of a semiconductor processing chamber. The silicon-containing material may extend into one or more recesses defined by alternating layers of material deposited on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting a remaining silicon-containing material with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the silicon-containing material. The methods may include providing a cleaning agent to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the cleaning agent. The contacting with the cleaning precursor may remove surface oxide from the substrate.

公开(公告)号：US20230235451A1

公开(公告)日：2023-07-27

申请号：US18100800

申请日：2023-01-24

Applicant: Applied Materials, Inc. ,  Wayne State University

Inventor： Thomas Joseph Knisley ,  Martha Serna Villacis ,  Mark Saly ,  Lakmal C. Kalutarage ,  Charles H. Winter ,  Matthew Bertram Edward Griffiths ,  Shalini Tripathi

IPC: C23C16/18 ,  C23C16/56 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/56 ,  C23C16/45527

Abstract: Molybdenum-DAD precursors are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum-DAD precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220301883A1

公开(公告)日：2022-09-22

申请号：US17836694

申请日：2022-06-09

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Lisa J. Enman ,  Lakmal C. Kalutarage ,  Mark J. Saly

IPC: H01L21/311 ,  H01L21/02

Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.